Investigation of the strain induced optical transition energy shift of the GaN nanorod light emitting diode arrays

Liang-Yi Chen; Hung-Hsun Huang; Chun-Hsiang Chang; Ying-Yuan Huang; Yuh-Renn Wu; JianJang Huang

doi:10.1364/OE.19.00A900

Optics Express
Vol. 19,
Issue S4,
pp. A900-A907
(2011)
•https://doi.org/10.1364/OE.19.00A900

Investigation of the strain induced optical transition energy shift of the GaN nanorod light emitting diode arrays

Liang-Yi Chen, Hung-Hsun Huang, Chun-Hsiang Chang, Ying-Yuan Huang, Yuh-Renn Wu, and JianJang Huang

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Liang-Yi Chen, Hung-Hsun Huang, Chun-Hsiang Chang, Ying-Yuan Huang, Yuh-Renn Wu, and JianJang Huang, "Investigation of the strain induced optical transition energy shift of the GaN nanorod light emitting diode arrays," Opt. Express 19, A900-A907 (2011)

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- Light-emitting Diodes
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About this Article
History
- Original Manuscript: March 7, 2011
- Revised Manuscript: June 3, 2011
- Manuscript Accepted: June 3, 2011
- Published: July 1, 2011
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Abstract

Strain in the semiconductor light emitting layers has profound effect on the energy band structure and the optical properties of the light emitting diodes (LEDs). Here, we report the fabrication and characterization of GaN nanorod LED arrays. We found that the choice of nanorod passivation materials results in the variation of strain in the InGaN/GaN quantum wells, and thus the corresponding change of light emission properties. The results were further investigated by performing Raman measurement to understand the strain of nanorods with different passivation materials and by calculating the optical transition energy of the devices under the influence of strain-induced deformation potential and the piezoelectric polarization field.

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Fig. 1 Schematic diagram of the nanorod LED array. The passivation layer is either spin-coated SOG or PECVD-grown SiO₂.

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Fig. 2 EL spectra of the planar LED (a) “Nanorod LED with SiO₂“ (b) “Nanorod LED with SOG” (c) at the injection current between 2mA and 20mA. The peak energy position (d) and the peak energy shift (e) of the devices are also plotted.

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Fig. 3 Close-up views of the InGaN E₂ ^H phonon mode of the planar structure, nanorod-SiO₂ and nanorod-SOG.

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Fig. 4 Illustration of the vertical force exerted on the sidewall of the nanorods by the passivation material.

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Fig. 5 Calculated band gap profiles and the optical transition energy between first states in the QW of (a) the planar structure, (b) Nanorod with SiO₂ (c) Nanorod with SOG. Note only strain relaxation induced band shrinkage is considered here.

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Fig. 6 Calculated band gap profiles and the optical transition energy between first energy states within the quantum well of (a) Planar structure (b) Nanorod with SiO₂ (c) Nanorod with SOG. The results are obtained by considering both the strain relaxation induced band shrinkage and QCSE.

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Tables (1)

Table 1 Parameters employed in the simulation

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Δ ω = ω - ω_{0} = (2 a_{λ} - 2 \frac{c_{13}}{c_{33}} b_{λ}) ε_{| |}

E_{g, G a N} (1 - X) + E_{g, I n N} X

E_{p z} = \frac{2}{ε_{r} ε_{0}} (\frac{c_{13}}{c_{33}} e_{33} - e_{31}) ε_{x x}

Symbol	GaN	InN
Stiffness constants 2C₁₃/C₃₃	0.6 _[15]	0.9 _[15]
Phonon deformation Potentials (cm^-1) a_λ(E₂ ^H) b_λ(E₂ ^H)	−850 _[15] −920 _[15]	−610 _[15] −857 _[15]
Piezoelectric constants (C/m²) e₃₁ e₃₃	−0.33 _[22] 0.65 _[22]	−0.57 _[23] 0.97 _[23]
Dielectric constant (E_┴c) ε_r	9.5 _[24]	13.1 _[25]
Effective mass_┴ (m₀) m_e m_hh m_lh	0.18 _[19] 1.65 _[19] 0.15 _[19]	0.1 _[19] 1.68 _[19] 0.11 _[19]

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