Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Journal Home About Issues in Progress Current Issue All Issues Feature Issues

Design and fabrication of vertical-injection GaN-based light-emitting diodes

Hyunsoo Kim, Kyoung-Kook Kim, Sung-Nam Lee, and Kwang-Hyeon Baik

Open Access Open Access

Abstract

The fabrication process and design issues for the fabrication of vertical-injection GaN-based light-emitting diodes were investigated. The process yield was reduced according to the adhesion of reflective p-electrodes, the exposure of electroplated metal in plasma, and wet-etching induced surface textures. The chip design utilizing current blocking layer and branched n-electrode was found to significantly affect the power efficiency of LEDs.

©2011 Optical Society of America

Full Article  |  PDF Article
More Like This
Vertical InGaN light-emitting diodes with a sapphire-face-up structure

Y.C. Yang, Jinn-Kong Sheu, Ming-Lun Lee, Shang-Ju Tu, Feng-Wen Huang, Wei-Chih Lai, Schang Jing Hon, and Tsun Kai Ko
Opt. Express 20(S1) A119-A124 (2012)

High-power and reliable GaN-based vertical light-emitting diodes on 4-inch silicon substrate

Shengjun Zhou, Haohao Xu, Bin Tang, Yingce Liu, Hui Wan, and Jiahao Miao
Opt. Express 27(20) A1506-A1516 (2019)

Light extraction enhancement of AlGaN-based vertical type deep-ultraviolet light-emitting-diodes by using highly reflective ITO/Al electrode and surface roughening

Youn Joon Sung, Min-Sung Kim, Hwankyo Kim, Sunghan Choi, Young Hoon Kim, Myung-Hoon Jung, Rak-Jun Choi, Yong-Tae Moon, Jeong-Tak Oh, Hwan-Hee Jeong, and Geun Young Yeom
Opt. Express 27(21) 29930-29937 (2019)

View More...

Cited By

Optica participates in Crossref's Cited-By Linking service. Citing articles from Optica Publishing Group journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (5)
Fig. 1
Fig. 1 Ag-based electrode and its influence on LLO process. (a) Transmission electron microscopy (TEM) z-contrast image of AgCu p-electrodes. (b) The optical microscopic images of LEDs fabricated with Ag after LLO process.

Download Full Size | PDF

Fig. 2
Fig. 2 Dry etching of N-polar GaN. (a) The dry etching rate of Ga-polar and N-polar GaN as a function of %Cl2. (b) SEM images of N-polar surfaces degraded after dry etching.

Download Full Size | PDF

Fig. 3
Fig. 3 Wet etching of N-polar surface and its influence on light extraction. (a) The light extraction efficiency of vertical LEDs as a function of cone density. The upper and lower inset shows the SEM images of KOH-etched N-polar GaN and the schematic used for ray-tracing simulation, respectively. (b) TEM images of vertical chips (mesa sidewall) after KOH wet etching.

Download Full Size | PDF

Fig. 4
Fig. 4 The LED performance before and after wet etching. (a) The EL spectra, (b) the optical output power, and (c) the forward voltages of vertical LEDs before and after wet etching.

Download Full Size | PDF

Fig. 5
Fig. 5 The chip design of vertical LEDs using CBL and branched n-electrodes. (a) The schematic cross-sectional view of LEDs having CBL. (b) The schematic top-views of LED A-E (c) The forward voltage, (d) optical output power, and (e) the power efficiency of LED A-E.

Download Full Size | PDF

Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use