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High-efficiency InGaN-based LEDs grown on patterned sapphire substrates

Xiao-Hui Huang, Jian-Ping Liu, Jun-Jie Kong, Hui Yang, and Huai-Bing Wang

Open Access Open Access

Abstract

GaN films grown on PSS are investigated by XRD, CL, SEM and TEM. There are low threading dislocations (TDs) with larger fill factor, which results in better electrostatic discharge (ESD) yield of LEDs. The effect of growth rate on dislocations in GaN films grown on PSS is investigated by TEM. It is found that dislocations density decreases as the growth rates decrease. And the performance of InGaN-based LEDs on different PSS is analyzed. The performance of LEDs grown on different PSS is determined by slanted angle and fill factor simultaneously.

©2011 Optical Society of America

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Figures (7)
Fig. 1
Fig. 1 The plan-view SEM images of the GaN epi-layers grown on PSS with the shape of 3.0/2.0/1.5 μm × μm × μm: (a) 0 min, (b) 3 min, (c) 10 min and (d) 30 min after GaN nucleation layer, respectively.

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Fig. 2
Fig. 2 (a)-(c) SEM images of epilayers grown on the PSS for various growth rates: 2.2 μm/h, 1.9μm/h and 1.6 μm/h, respectively. (d)-(f) Cross-section TEM images of the GaN epilayers corresponding to sample D, E and F, respectively.

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Fig. 3
Fig. 3 FWHM of (002) and (102) rocking-curve peaks of epilayers grown on the PSS for various growth rates: 2.2 μm/h, 1.9μm/h and 1.6 μm/h, respectively.

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Fig. 4
Fig. 4 [(a)-(d)] The Plan view CL mapping of 3 μm epilayers grown on sample G, H, I and J.

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Fig. 5
Fig. 5 The CL dark density and FWHM of the rocking curve for both the symmetric (002) and asymmetric (102) is plotted as a function of fill factor.

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Fig. 6
Fig. 6 The ESD yield of LEDs grown on sample A, B, C and D is plotted as a function of fill factor.

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Fig. 7
Fig. 7 The plot of output power of LEDs at injection current of 20 mA as the function of slanted angles.

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