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Development of nanophosphors for light emitting diodes

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Abstract

We report the development of new nanophosphor structures based on the Mn-doped ZnSeS material system to enhance the color properties, luminosity and efficiency of white LEDs. These structures have been demonstrated for phosphor-based white LED applications utilizing both blue and UV LED systems. Bandgap tuning for near UV (405 nm) and blue (460 nm) excitations are reported. Using various optimization procedures, we have produced ZnSe:Mn nanoparticles with an external quantum yield greater than 80%.

©2011 Optical Society of America

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Figures (7)

Fig. 1
Fig. 1 Schematic of a typical diode lamp showing the placement of the GaInN drive chip, nanophosphor and host matrix envelope that is typically fashioned to have a dome-like top.
Fig. 2
Fig. 2 Proposed nanophosphor architecture including Mn ion incorporation within the ZnSe shell for “small” and “large” ZnSe:Mn Nanophosphors.
Fig. 3
Fig. 3 LED output efficiency as a function of nanoparticle diameter for 405 and 460nm excitation wavelengths, 585 nm emission wavelength, and combined excitation and emission.
Fig. 4
Fig. 4 Relative LED phosphor emission efficiency as a function of MFP normalized to the phosphor layer thickness.
Fig. 5
Fig. 5 Particle size distribution and statistical averages for samples S01 (left) and S05 (right).
Fig. 6
Fig. 6 Broadband emission and spectral control achieved using various single component ZnSe:Mn nanocrystals under 405 nm excitation.
Fig. 7
Fig. 7 (Top) Relative absorption (dashed lines) and emission (solid lines) of ZnSe:Mn NPs with different particle sizes. (Bottom) Coulter particle size distribution of the same samples showing average sizes of 6.9nm and 17nm.

Equations (2)

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Mn ( C 18 H 35 O 2 ) 2 +  C 18 H 36 280 C Mn 2 + +  2 ( ( C 18 H 35 O 2 ) 2 ) 2 −−  in a C 18 H 36 solution
Se  +   ( C 4 H 9 ) 3 P  140C ( C 4 H 9 ) 3 PSe  +   ( C 4 H 9 ) 3 P
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