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GaN-based light-emitting diodes with photonic crystals structures fabricated by porous anodic alumina template

XingXing Fu, Bei Zhang, XiangNing Kang, JunJing Deng, Chang Xiong, Tao Dai, XianZhe Jiang, TongJun Yu, ZhiZhong Chen, and Guo Yi Zhang

Open Access Open Access

Abstract

In this paper, we propose and demonstrate a convenient and flexible approach for preparation large-area of photonic crystals (PhCs) structures on the GaN-based LED chip. The highly-ordered porous anodic alumina (AAO) with pitch of wavelength scale was adopted as a selective dry etching mask for PhCs-pattern transfer. The PhCs with different pore depths were simultaneously formed on the entire surfaces of GaN-based LED chip including ITO, GaN surrounding contacts and the sidewall of the mesa by one-step reactive ion etching (RIE). The light output power improvement of PhCs-based GaN LED was achieved as high as 94% compared to that of the conventional GaN-based LED.

©2011 Optical Society of America

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Figures (5)
Fig. 1
Fig. 1 Two-inch diameter large-area AAO template; (b) Top view of AAO PhCs structures; (c) The corresponding PhCs structures of the GaN

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Fig. 2
Fig. 2 The PhC structures on the surfaces of GaN-based LED. (a) Schematic diagram of light traces emitting from the PhCs-based LED; (b) The side view SEM image of PhCs on the ITO surface of GaN-based LED; (c) the side view SEM image of PhCs on the surfaces of p-GaN layer, side-wall and n-GaN layer, respectively.

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Fig. 3
Fig. 3 Typical L-I-V curves of conventional GaN-based LED and surface-patterned GaN-based LED with PhC structures.

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Fig. 4
Fig. 4 The typical surface EL images of (a) C-LED and (b) PhC-LED at the injection current of 0.5 mA, respectively.

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Fig. 5
Fig. 5 Measured wavelength-resolved angular EL spectrum for PhC-LED and C-LED

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