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Enhanced efficiency for c-Si solar cell with nanopillar array via quantum dots layers

Hsin-Chu Chen, Chien-Chung Lin, Hao-Wei Han, Yu-Lin Tsai, Chia-Hua Chang, Hsun-Wen Wang, Min-An Tsai, Hao-Chung Kuo, and Peichen Yu

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Abstract

The enhanced efficiency of the crystalline silicon (c-Si) solar cell with nanopillar arrays (NPAs) was demonstrated by deployment of CdS quantum dots (QDs). The NPAs was fabricated by the colloidal lithography and reactive-ion etching techniques. Under a simulated one-sun condition, the device with CdS QDs shows a 33% improvement of power conversion efficiency, compared with the one without QDs. For further investigation, the excitation spectrum of photoluminescence (PL), absorbance spectrum, current-voltage (I-V) characteristics, reflectance and external quantum efficiency of the device was measured and analyzed. It is noteworthy that the enhancement of efficiency could be attributed to the photon down-conversion, the antireflection, and the improved electrical property.

©2011 Optical Society of America

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Figures (5)
Fig. 1
Fig. 1 The schematic fabrication flow for c-Si nanopillar arrays (NPA) solar cell with CdS quantum dots (QDs) layers: (a) spin-cast of nearly-close-packed polystyrene nanospheres monolayer, (b) resulting NPA after dry etching, (c) diffusion of an N-type layer. (d) SiNx deposition and screen printing of the front and back electrodes, and then spin CdS QDs layers on the cell.

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Fig. 2
Fig. 2 (a) A cross-sectional view of scanning electron microscopic (SEM) image of the c-Si nanopillar arrays. (b) A cross-sectional TEM image of edge of metal contact after the integration CdS QDs layers, the size of CdS QDs layers is about 6 nm. The element of CdS QDs layers was analyzed by Energy Dispersive Spectrometer (EDS) (insets of under corner).

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Fig. 3
Fig. 3 (a) UV-Vis absorbance (red) and photoluminescence (blue) spectra of CdS QDs measure in toluene. The PLE spectrum was taken at the maximum of PL intensity (~430 nm). For the PL spectrum, the sample was excited by a light beam with 365 nm. (b) The measured reflectance spectra for cells with c-Si nanopillar arrays (NPA) with and without CdS quantum dots (QDs) layers.

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Fig. 4
Fig. 4 Color online) Photovoltaic I–V characteristics of the c-Si nanopillar arrays (NPA) solar cell with and without CdS quantum dots (QDs) layers.

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Fig. 5
Fig. 5 (a) Measurement of External quantum efficiency of the fabricated c-Si nanopillar arrays (NPA) solar cell with and without CdS QDs layers. (b) Peak (at ~335 nm wavelengths) of short-wavelength enhancement of in EQE indicates photon down-conversion.

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Tables (1)

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Table 1 Current-Voltage Characteristics of c-Si NPA Solar Cells with and without CdS QDs layers.

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Equations (2)

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J s c = e h c × ∫ 320 n m 1100 n m λ × E Q E ( λ ) × I A M 1.5 G ( λ ) d λ
J s c , Q D s = e h c × ( ∫ 320 n m 400 n m [ 1 − A ( λ ) ] × λ × E Q E ( λ ) × I A M 1.5 G ( λ ) d λ + ∫ 320 n m 400 n m A ( λ ) × λ × E Q E ( λ ) × Q Y × I A M 1.5 G ( λ ) d λ + ∫ 400 n m 1100 n m λ × E Q E ( λ ) × I A M 1.5 G ( λ ) d λ )
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