Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Electroluminescence from chirality-sorted (9,7)-semiconducting carbon nanotube devices

Open Access Open Access

Abstract

We have measured the electroluminescence and photoluminescence of (9,7)-semiconducting carbon nanotube devices and demonstrate that the electroluminescence wavelength is determined by the nanotube’s chiral index (n,m). The devices were fabricated on Si3N4-membranes by dielectrophoretic assembly of tubes from monochiral dispersion. Electrically driven (9,7)-devices exhibit a single Lorentzian-shaped emission peak at 825 nm in the visible part of the spectrum. The emission could be assigned to the excitonic E22 interband-transition by comparison of the electroluminescence spectra with corresponding photoluminescence excitation maps. We show a linear dependence of the EL peak width on the electrical current, and provide evidence for the inertness of Si3N4 surfaces with respect to the nanotubes optical properties.

©2011 Optical Society of America

Full Article  |  PDF Article
More Like This
Multispectral electroluminescence enhancement of single-walled carbon nanotubes coupled to periodic nanodisk arrays

Yuriy Zakharko, Martin Held, Arko Graf, Tobias Rödlmeier, Ralph Eckstein, Gerardo Hernandez-Sosa, Bernd Hähnlein, Jörg Pezoldt, and Jana Zaumseil
Opt. Express 25(15) 18092-18106 (2017)

Intense terahertz pulse induced exciton generation in carbon nanotubes

Shinichi Watanabe, Nobutsugu Minami, and Ryo Shimano
Opt. Express 19(2) 1528-1538 (2011)

Bright visible emission from carbon nanotubes spatially constrained on a micro-bubble

Gopika Ramanandan, A. K. Dharmadhikari, J. A. Dharmadhikari, Hema Ramachandran, and D. Mathur
Opt. Express 17(12) 9614-9619 (2009)

Cited By

Optica participates in Crossref's Cited-By Linking service. Citing articles from Optica Publishing Group journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (3)

Fig. 1
Fig. 1 (a) Schematic cross section of the (9,7)-nanotube device. (b) Top view image of the light emission pattern. The bright emission spot origins from the biased device #2, the weaker spots are caused by scattering of the emitted light at neighboring structures. (c) Corresponding scanning electron micrograph of the device array. The biased device #2 is indicated by a large circle, the structures that cause the light scattering observed in (b) are indicated by small circles. (scale bar length = 10 µm)
Fig. 2
Fig. 2 , Evolution of the electroluminescence spectra with driving power of (9,7)-CNT device #1 (a) and #2 (b). (c) Photoluminescence excitation map of a (9,7)-device on Si3N4. All spectra are fitted to a Lorentzian lineshape.
Fig. 3
Fig. 3 (a) Electroluminescence peak width ΔE and peak intensity versus current for (9,7) CNT device #1 and #2. Marked in red is the width of the photoluminescence excitation profile of Fig. 2(c). (b) Current-voltage characteristic of a (9,7) device.
Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.