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Improving the performance of OLEDs by using a low-temperature-evaporable n-dopant and a high-mobility electron transport host

Lian Duan, Deqiang Zhang, Yanrui Li, Guohui Zhang, and Yong Qiu

Open Access Open Access

Abstract

Ideal n-type layers are highly desired for high performance organic light emitting diodes (OLEDs). For the first time, we studied the combination of a low-temperature-evaporable n-dopant KBH4 and a high mobility electron transport material 9,10-bis(3-(pyridin-3-yl)phenyl)anthracene (DPyPA). The excellent transporting property of the DPyPA: KBH4 layer allows the fine tuning of the OLED performance by varying the thickness of the n-doped layer in a wide range (from 10 nm to 50 nm, 100 nm, 150 nm and 200 nm). The device with the optimized n-type layer thickness of 150 nm shows the best performance with a high current efficiency of 27.60 cd/A at the brightness 10,000 cd/m2, which is about 40% higher than the device with a 10 nm n-type layer (19.95 cd/A at 10,000 cd/m2). The high performance is attributed to the optimization of optical path and the decrease of the loss in the organic layer/cathode interface due to the thick n-doped layer.

©2011 Optical Society of America

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Figures (6)
Fig. 1
Fig. 1 Structures of the two types of devices (Devices I are varied with different concentration in the n-doped layer and Device II with different thickness of n-doped layer)

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Fig. 2
Fig. 2 Characteristics of Devices I (1-3) with different concentration of KBH4 and the control device with a Alq3: Li layer. a) is the J-V-B characteristics (current density and brightness versus voltage), b) is the CE-B-PE characteristics (current efficiency and power efficiency versus brightness)

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Fig. 3
Fig. 3 Characteristics of Devices II (1-4) with different thickness of n-doped layer compared to Device I-2. a) is the J-V-B characteristics (current density and brightness versus voltage), b) is the CE-B-PE characteristics (current efficiency and power efficiency versus brightness)

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Fig. 4
Fig. 4 The electroluminescent (EL) spectra and CIE of Device II(1-4) and Device I-2

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Fig. 5
Fig. 5 Measured and simulated CIE coordinates

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Fig. 6
Fig. 6 a) EL spectra at viewing angle of 0°, 30°, 45°, 60° for Device I-2 and Device II-3, respectively. b) Polar plots of measured EL intensity (normalized to the 00 intensity) for Device I-2 (circle) and Device II-3(triangle).

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Tables (1)

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Table 1 CIE coordinates of Device II-3 at driving various voltages.

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