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Electrically driven hybrid Si/III-V Fabry-Pérot lasers based on adiabatic mode transformersB. Ben Bakir, A. Descos, N. Olivier, D. Bordel, P. Grosse, E. Augendre, L. Fulbert, and J. M. Fedeli »View Author Affiliations
B. Ben Bakir,*
A. Descos,
N. Olivier,
D. Bordel,
P. Grosse,
E. Augendre,
L. Fulbert,
and J. M. Fedeli
CEA-LETI, Minatec, 17 rue des Martyrs, F-38054 Grenoble cedex 9, France *Corresponding author: badhise.ben-bakir@cea.fr |
Optics Express, Vol. 19, Issue 11, pp. 10317-10325 (2011)
http://dx.doi.org/10.1364/OE.19.010317
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Abstract
We report the first demonstration of an electrically driven hybrid silicon/III–V laser based on adiabatic mode transformers. The hybrid structure is formed by two vertically superimposed waveguides separated by a 100-nm-thick SiO2 layer. The top waveguide, fabricated in an InP/InGaAsP-based heterostructure, serves to provide optical gain. The bottom Si-waveguides system, which supports all optical functions, is constituted by two tapered rib-waveguides (mode transformers), two distributed Bragg reflectors (DBRs) and a surface-grating coupler. The supermodes of this hybrid structure are controlled by an appropriate design of the tapers located at the edges of the gain region. In the middle part of the device almost all the field resides in the III–V waveguide so that the optical mode experiences maximal gain, while in regions near the III-V facets, mode transformers ensure an efficient transfer of the power flow towards Si-waveguides. The investigated device operates under quasi-continuous wave regime. The room temperature threshold current is 100 mA, the side-mode suppression ratio is as high as 20 dB, and the fiber-coupled output power is ~7 mW.
© 2011 OSA
OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(250.5300) Optoelectronics : Photonic integrated circuits
ToC Category:
Lasers and Laser Optics
History
Original Manuscript: January 10, 2011
Revised Manuscript: March 23, 2011
Manuscript Accepted: March 27, 2011
Published: May 11, 2011
Citation
B. Ben Bakir, A. Descos, N. Olivier, D. Bordel, P. Grosse, E. Augendre, L. Fulbert, and J. M. Fedeli, "Electrically driven hybrid Si/III-V Fabry-Pérot lasers based on adiabatic mode transformers," Opt. Express 19, 10317-10325 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-11-10317
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References
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- B. Ben Bakir, A. V. de Gyves, R. Orobtchouk, P. Lyan, C. Porzier, A. Roman, and J.-M. Fedeli, “Low loss (<1dB) and Polarization-Insensitive Edge Fiber Couplers fabricated on 200 mm Silicon-on-Insulator wafers,” IEEE Photon. Technol. Lett. 22(11), 739–741 (2010). [CrossRef]
- W. Bogaerts, S. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, ““Silicon-on-Insulator Spectral Filters Fabricated with CMOS Technology,” J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010). [CrossRef]
- J. M. Fedeli, L. Di Cioccio, D. Marris-Morini, L. Vivien, R. Orobtchouk, P. Rojo-Romeo, C. Seassal, and F. Mandorlo, “Development of Silicon Photonics Devices Using Microelectronic Tools for the Integration on Top of a CMOS Wafer,” Adv. Opt.Technol. 2008, 412518 (2008).
- M. Kostrzewa, L. Di Cioccio, M. Zussy, J. C. Roussin, J. M. Fedeli, N. Kernevez, P. Regreny, C. Lagahe-Blanchard, and B. Aspar, “InP dies transferred onto silicon substrate for optical interconnects application,” Sens. Actuators A Phys. 125(2), 411–414 (2006). [CrossRef]
- W. Bogaerts, S. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, ““Silicon-on-Insulator Spectral Filters Fabricated with CMOS Technology,” J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010). [CrossRef]
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- H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature 433(7027), 725–728 (2005). [CrossRef] [PubMed]
- G. Roelkens, L. Liu, D. Liang, R. Jones, A. W. Fang, B. R. Koch, and J. E. Bowers, “III-V/silicon photonics for on-chip and intra-chip optical interconnects,” Laser Photonics Rev. 4(6), 751–779 (2010). [CrossRef]
- A. W. Fang, E. Lively, Y.-H. Kuo, D. Liang, and J. E. Bowers, “A distributed feedback silicon evanescent laser,” Opt. Express 16(7), 4413–4419 (2008). [CrossRef] [PubMed]
- A. W. Fang, R. Jones, H. Park, O. Cohen, O. Raday, M. J. Paniccia, and J. E. Bowers, “Integrated AlGaInAs-silicon evanescent race track laser and photodetector,” Opt. Express 15(5), 2315–2322 (2007). [CrossRef] [PubMed]
- A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express 14(20), 9203–9210 (2006). [CrossRef] [PubMed]
- J. M. Fedeli, L. Di Cioccio, D. Marris-Morini, L. Vivien, R. Orobtchouk, P. Rojo-Romeo, C. Seassal, and F. Mandorlo, “Development of Silicon Photonics Devices Using Microelectronic Tools for the Integration on Top of a CMOS Wafer,” Adv. Opt.Technol. 2008, 412518 (2008).
- M. Kostrzewa, L. Di Cioccio, M. Zussy, J. C. Roussin, J. M. Fedeli, N. Kernevez, P. Regreny, C. Lagahe-Blanchard, and B. Aspar, “InP dies transferred onto silicon substrate for optical interconnects application,” Sens. Actuators A Phys. 125(2), 411–414 (2006). [CrossRef]
- B. Ben Bakir, A. V. de Gyves, R. Orobtchouk, P. Lyan, C. Porzier, A. Roman, and J.-M. Fedeli, “Low loss (<1dB) and Polarization-Insensitive Edge Fiber Couplers fabricated on 200 mm Silicon-on-Insulator wafers,” IEEE Photon. Technol. Lett. 22(11), 739–741 (2010). [CrossRef]
- D. Marris-Morini, L. Vivien, J.-M. Fédéli, E. Cassan, Ph. Lyan, and S. Laval, “Low loss and high speed silicon optical modulator based on a lateral carrier depletion structure,” Opt. Express 16(1), 334–339 (2008). [CrossRef] [PubMed]
- L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J. F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007). [CrossRef] [PubMed]
- L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000). [CrossRef] [PubMed]
- B. Gelloz, A. Kojima, and N. Koshida, “Highly efficient and stable luminescence of nanocrystalline porous silicon treated by high-pressure water vapor annealing,” Appl. Phys. Lett. 87(3), 031107 (2005). [CrossRef]
- H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature 433(7027), 725–728 (2005). [CrossRef] [PubMed]
- J. Sasaki, M. Itoh, T. Tamanuki, H. Hatakeyama, S. Kitamura, T. Shimoda, and T. Kato, “Multiple-chip precise self-aligned assembly for hybrid integrated optical modules using Au-Sn solder bumps,” IEEE Trans. Adv. Packag. 24(2), 569–575 (2001). [CrossRef]
- K. Solehmainen, M. Kapulainen, P. Heimala, and K. Polamo, “Erbium doped waveguides fabricated with atomic layer deposition method,” IEEE Photon. Technol. Lett. 16(1), 194–196 (2004). [CrossRef]
- J. Sasaki, M. Itoh, T. Tamanuki, H. Hatakeyama, S. Kitamura, T. Shimoda, and T. Kato, “Multiple-chip precise self-aligned assembly for hybrid integrated optical modules using Au-Sn solder bumps,” IEEE Trans. Adv. Packag. 24(2), 569–575 (2001). [CrossRef]
- G. Roelkens, L. Liu, D. Liang, R. Jones, A. W. Fang, B. R. Koch, and J. E. Bowers, “III-V/silicon photonics for on-chip and intra-chip optical interconnects,” Laser Photonics Rev. 4(6), 751–779 (2010). [CrossRef]
- A. W. Fang, R. Jones, H. Park, O. Cohen, O. Raday, M. J. Paniccia, and J. E. Bowers, “Integrated AlGaInAs-silicon evanescent race track laser and photodetector,” Opt. Express 15(5), 2315–2322 (2007). [CrossRef] [PubMed]
- A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express 14(20), 9203–9210 (2006). [CrossRef] [PubMed]
- H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature 433(7027), 725–728 (2005). [CrossRef] [PubMed]
- K. Solehmainen, M. Kapulainen, P. Heimala, and K. Polamo, “Erbium doped waveguides fabricated with atomic layer deposition method,” IEEE Photon. Technol. Lett. 16(1), 194–196 (2004). [CrossRef]
- J. E. Bowers, J. Piprek, Y. J. Chiu, D. Lofgreen, P. Abraham, K. A. Black, and A. Karim, “Super lattice barrier 1528-nm vertical-cavity laser with 85°C continuous-wave operation,” IEEE Photon. Technol. Lett. 12(11), 1438–1440 (2000). [CrossRef]
- K. Kato and Y. Tohmori, “PLC hybrid integration technology and its application to photonic components,” IEEE J. Sel. Top. Quantum Electron. 6(1), 4–13 (2000). [CrossRef]
- J. Sasaki, M. Itoh, T. Tamanuki, H. Hatakeyama, S. Kitamura, T. Shimoda, and T. Kato, “Multiple-chip precise self-aligned assembly for hybrid integrated optical modules using Au-Sn solder bumps,” IEEE Trans. Adv. Packag. 24(2), 569–575 (2001). [CrossRef]
- A. Katz, B. E. Weir, and W. C. Dautremont-Smith, “Au/Pt/Ti contacts to p-In0.53Ga0.47As and n-InP layers formed by a single metallization common step and rapid thermal processing,” J. Appl. Phys. 68(3), 1123–1128 (1990). [CrossRef]
- M. Kostrzewa, L. Di Cioccio, M. Zussy, J. C. Roussin, J. M. Fedeli, N. Kernevez, P. Regreny, C. Lagahe-Blanchard, and B. Aspar, “InP dies transferred onto silicon substrate for optical interconnects application,” Sens. Actuators A Phys. 125(2), 411–414 (2006). [CrossRef]
- J. Liu, X. Sun, R. Camacho-Aguilera, L. C. Kimerling, and J. Michel, “Ge-on-Si laser operating at room temperature,” Opt. Lett. 35(5), 679–681 (2010). [CrossRef] [PubMed]
- K. K. Lee, D. R. Lim, D. Pan, C. Hoepfner, W.-Y. Oh, K. Wada, L. C. Kimerling, K. P. Yap, and M. T. Doan, “Mode transformer for miniaturized optical circuits,” Opt. Lett. 30(5), 498–500 (2005). [CrossRef] [PubMed]
- J. Sasaki, M. Itoh, T. Tamanuki, H. Hatakeyama, S. Kitamura, T. Shimoda, and T. Kato, “Multiple-chip precise self-aligned assembly for hybrid integrated optical modules using Au-Sn solder bumps,” IEEE Trans. Adv. Packag. 24(2), 569–575 (2001). [CrossRef]
- G. Roelkens, L. Liu, D. Liang, R. Jones, A. W. Fang, B. R. Koch, and J. E. Bowers, “III-V/silicon photonics for on-chip and intra-chip optical interconnects,” Laser Photonics Rev. 4(6), 751–779 (2010). [CrossRef]
- B. Gelloz, A. Kojima, and N. Koshida, “Highly efficient and stable luminescence of nanocrystalline porous silicon treated by high-pressure water vapor annealing,” Appl. Phys. Lett. 87(3), 031107 (2005). [CrossRef]
- B. Gelloz, A. Kojima, and N. Koshida, “Highly efficient and stable luminescence of nanocrystalline porous silicon treated by high-pressure water vapor annealing,” Appl. Phys. Lett. 87(3), 031107 (2005). [CrossRef]
- M. Kostrzewa, L. Di Cioccio, M. Zussy, J. C. Roussin, J. M. Fedeli, N. Kernevez, P. Regreny, C. Lagahe-Blanchard, and B. Aspar, “InP dies transferred onto silicon substrate for optical interconnects application,” Sens. Actuators A Phys. 125(2), 411–414 (2006). [CrossRef]
- H. Kroemer, T. Liu, and P. Petroff, “GaAs on Si and related systems: Problems and prospects,” J. Cryst. Growth 95(1-4), 96–102 (1989). [CrossRef]
- M. Kostrzewa, L. Di Cioccio, M. Zussy, J. C. Roussin, J. M. Fedeli, N. Kernevez, P. Regreny, C. Lagahe-Blanchard, and B. Aspar, “InP dies transferred onto silicon substrate for optical interconnects application,” Sens. Actuators A Phys. 125(2), 411–414 (2006). [CrossRef]
- D. Marris-Morini, L. Vivien, J.-M. Fédéli, E. Cassan, Ph. Lyan, and S. Laval, “Low loss and high speed silicon optical modulator based on a lateral carrier depletion structure,” Opt. Express 16(1), 334–339 (2008). [CrossRef] [PubMed]
- L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J. F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007). [CrossRef] [PubMed]
- L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J. F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007). [CrossRef] [PubMed]
- G. Roelkens, L. Liu, D. Liang, R. Jones, A. W. Fang, B. R. Koch, and J. E. Bowers, “III-V/silicon photonics for on-chip and intra-chip optical interconnects,” Laser Photonics Rev. 4(6), 751–779 (2010). [CrossRef]
- A. W. Fang, E. Lively, Y.-H. Kuo, D. Liang, and J. E. Bowers, “A distributed feedback silicon evanescent laser,” Opt. Express 16(7), 4413–4419 (2008). [CrossRef] [PubMed]
- H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature 433(7027), 725–728 (2005). [CrossRef] [PubMed]
- G. Roelkens, L. Liu, D. Liang, R. Jones, A. W. Fang, B. R. Koch, and J. E. Bowers, “III-V/silicon photonics for on-chip and intra-chip optical interconnects,” Laser Photonics Rev. 4(6), 751–779 (2010). [CrossRef]
- H. Kroemer, T. Liu, and P. Petroff, “GaAs on Si and related systems: Problems and prospects,” J. Cryst. Growth 95(1-4), 96–102 (1989). [CrossRef]
- J. E. Bowers, J. Piprek, Y. J. Chiu, D. Lofgreen, P. Abraham, K. A. Black, and A. Karim, “Super lattice barrier 1528-nm vertical-cavity laser with 85°C continuous-wave operation,” IEEE Photon. Technol. Lett. 12(11), 1438–1440 (2000). [CrossRef]
- B. Ben Bakir, A. V. de Gyves, R. Orobtchouk, P. Lyan, C. Porzier, A. Roman, and J.-M. Fedeli, “Low loss (<1dB) and Polarization-Insensitive Edge Fiber Couplers fabricated on 200 mm Silicon-on-Insulator wafers,” IEEE Photon. Technol. Lett. 22(11), 739–741 (2010). [CrossRef]
- J. M. Fedeli, L. Di Cioccio, D. Marris-Morini, L. Vivien, R. Orobtchouk, P. Rojo-Romeo, C. Seassal, and F. Mandorlo, “Development of Silicon Photonics Devices Using Microelectronic Tools for the Integration on Top of a CMOS Wafer,” Adv. Opt.Technol. 2008, 412518 (2008).
- L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J. F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007). [CrossRef] [PubMed]
- J. M. Fedeli, L. Di Cioccio, D. Marris-Morini, L. Vivien, R. Orobtchouk, P. Rojo-Romeo, C. Seassal, and F. Mandorlo, “Development of Silicon Photonics Devices Using Microelectronic Tools for the Integration on Top of a CMOS Wafer,” Adv. Opt.Technol. 2008, 412518 (2008).
- D. Marris-Morini, L. Vivien, J.-M. Fédéli, E. Cassan, Ph. Lyan, and S. Laval, “Low loss and high speed silicon optical modulator based on a lateral carrier depletion structure,” Opt. Express 16(1), 334–339 (2008). [CrossRef] [PubMed]
- L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J. F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007). [CrossRef] [PubMed]
- L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000). [CrossRef] [PubMed]
- B. Ben Bakir, A. V. de Gyves, R. Orobtchouk, P. Lyan, C. Porzier, A. Roman, and J.-M. Fedeli, “Low loss (<1dB) and Polarization-Insensitive Edge Fiber Couplers fabricated on 200 mm Silicon-on-Insulator wafers,” IEEE Photon. Technol. Lett. 22(11), 739–741 (2010). [CrossRef]
- J. M. Fedeli, L. Di Cioccio, D. Marris-Morini, L. Vivien, R. Orobtchouk, P. Rojo-Romeo, C. Seassal, and F. Mandorlo, “Development of Silicon Photonics Devices Using Microelectronic Tools for the Integration on Top of a CMOS Wafer,” Adv. Opt.Technol. 2008, 412518 (2008).
- H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature 433(7027), 725–728 (2005). [CrossRef] [PubMed]
- A. W. Fang, R. Jones, H. Park, O. Cohen, O. Raday, M. J. Paniccia, and J. E. Bowers, “Integrated AlGaInAs-silicon evanescent race track laser and photodetector,” Opt. Express 15(5), 2315–2322 (2007). [CrossRef] [PubMed]
- A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express 14(20), 9203–9210 (2006). [CrossRef] [PubMed]
- A. W. Fang, R. Jones, H. Park, O. Cohen, O. Raday, M. J. Paniccia, and J. E. Bowers, “Integrated AlGaInAs-silicon evanescent race track laser and photodetector,” Opt. Express 15(5), 2315–2322 (2007). [CrossRef] [PubMed]
- A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express 14(20), 9203–9210 (2006). [CrossRef] [PubMed]
- L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J. F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007). [CrossRef] [PubMed]
- L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000). [CrossRef] [PubMed]
- H. Kroemer, T. Liu, and P. Petroff, “GaAs on Si and related systems: Problems and prospects,” J. Cryst. Growth 95(1-4), 96–102 (1989). [CrossRef]
- J. E. Bowers, J. Piprek, Y. J. Chiu, D. Lofgreen, P. Abraham, K. A. Black, and A. Karim, “Super lattice barrier 1528-nm vertical-cavity laser with 85°C continuous-wave operation,” IEEE Photon. Technol. Lett. 12(11), 1438–1440 (2000). [CrossRef]
- K. Solehmainen, M. Kapulainen, P. Heimala, and K. Polamo, “Erbium doped waveguides fabricated with atomic layer deposition method,” IEEE Photon. Technol. Lett. 16(1), 194–196 (2004). [CrossRef]
- B. Ben Bakir, A. V. de Gyves, R. Orobtchouk, P. Lyan, C. Porzier, A. Roman, and J.-M. Fedeli, “Low loss (<1dB) and Polarization-Insensitive Edge Fiber Couplers fabricated on 200 mm Silicon-on-Insulator wafers,” IEEE Photon. Technol. Lett. 22(11), 739–741 (2010). [CrossRef]
- L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000). [CrossRef] [PubMed]
- G. T. Reed, “Device physics: the optical age of silicon,” Nature 427(6975), 595–596 (2004). [CrossRef] [PubMed]
- M. Kostrzewa, L. Di Cioccio, M. Zussy, J. C. Roussin, J. M. Fedeli, N. Kernevez, P. Regreny, C. Lagahe-Blanchard, and B. Aspar, “InP dies transferred onto silicon substrate for optical interconnects application,” Sens. Actuators A Phys. 125(2), 411–414 (2006). [CrossRef]
- G. Roelkens, L. Liu, D. Liang, R. Jones, A. W. Fang, B. R. Koch, and J. E. Bowers, “III-V/silicon photonics for on-chip and intra-chip optical interconnects,” Laser Photonics Rev. 4(6), 751–779 (2010). [CrossRef]
- J. M. Fedeli, L. Di Cioccio, D. Marris-Morini, L. Vivien, R. Orobtchouk, P. Rojo-Romeo, C. Seassal, and F. Mandorlo, “Development of Silicon Photonics Devices Using Microelectronic Tools for the Integration on Top of a CMOS Wafer,” Adv. Opt.Technol. 2008, 412518 (2008).
- B. Ben Bakir, A. V. de Gyves, R. Orobtchouk, P. Lyan, C. Porzier, A. Roman, and J.-M. Fedeli, “Low loss (<1dB) and Polarization-Insensitive Edge Fiber Couplers fabricated on 200 mm Silicon-on-Insulator wafers,” IEEE Photon. Technol. Lett. 22(11), 739–741 (2010). [CrossRef]
- H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature 433(7027), 725–728 (2005). [CrossRef] [PubMed]
- M. Kostrzewa, L. Di Cioccio, M. Zussy, J. C. Roussin, J. M. Fedeli, N. Kernevez, P. Regreny, C. Lagahe-Blanchard, and B. Aspar, “InP dies transferred onto silicon substrate for optical interconnects application,” Sens. Actuators A Phys. 125(2), 411–414 (2006). [CrossRef]
- L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J. F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007). [CrossRef] [PubMed]
- J. Sasaki, M. Itoh, T. Tamanuki, H. Hatakeyama, S. Kitamura, T. Shimoda, and T. Kato, “Multiple-chip precise self-aligned assembly for hybrid integrated optical modules using Au-Sn solder bumps,” IEEE Trans. Adv. Packag. 24(2), 569–575 (2001). [CrossRef]
- J. M. Fedeli, L. Di Cioccio, D. Marris-Morini, L. Vivien, R. Orobtchouk, P. Rojo-Romeo, C. Seassal, and F. Mandorlo, “Development of Silicon Photonics Devices Using Microelectronic Tools for the Integration on Top of a CMOS Wafer,” Adv. Opt.Technol. 2008, 412518 (2008).
- W. Bogaerts, S. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, ““Silicon-on-Insulator Spectral Filters Fabricated with CMOS Technology,” J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010). [CrossRef]
- J. Sasaki, M. Itoh, T. Tamanuki, H. Hatakeyama, S. Kitamura, T. Shimoda, and T. Kato, “Multiple-chip precise self-aligned assembly for hybrid integrated optical modules using Au-Sn solder bumps,” IEEE Trans. Adv. Packag. 24(2), 569–575 (2001). [CrossRef]
- K. Solehmainen, M. Kapulainen, P. Heimala, and K. Polamo, “Erbium doped waveguides fabricated with atomic layer deposition method,” IEEE Photon. Technol. Lett. 16(1), 194–196 (2004). [CrossRef]
- J. Liu, X. Sun, R. Camacho-Aguilera, L. C. Kimerling, and J. Michel, “Ge-on-Si laser operating at room temperature,” Opt. Lett. 35(5), 679–681 (2010). [CrossRef] [PubMed]
- X. Sun, A. Zadok, M. J. Shearn, K. A. Diest, A. Ghaffari, H. A. Atwater, A. Scherer, and A. Yariv, “Electrically pumped hybrid evanescent Si/InGaAsP lasers,” Opt. Lett. 34(9), 1345–1347 (2009). [CrossRef] [PubMed]
- X. Sun, H.-C. Liu, and A. Yariv, “Adiabaticity criterion and the shortest adiabatic mode transformer in a coupled-waveguide system,” Opt. Lett. 34(3), 280–282 (2009). [CrossRef] [PubMed]
- X. Sun and A. Yariv, “Engineering supermode silicon/III–V hybrid waveguides for laser oscillation,” J. Opt. Soc. Am. B 25(6), 923–926 (2008). [CrossRef]
- J. Sasaki, M. Itoh, T. Tamanuki, H. Hatakeyama, S. Kitamura, T. Shimoda, and T. Kato, “Multiple-chip precise self-aligned assembly for hybrid integrated optical modules using Au-Sn solder bumps,” IEEE Trans. Adv. Packag. 24(2), 569–575 (2001). [CrossRef]
- K. Kato and Y. Tohmori, “PLC hybrid integration technology and its application to photonic components,” IEEE J. Sel. Top. Quantum Electron. 6(1), 4–13 (2000). [CrossRef]
- W. Bogaerts, S. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, ““Silicon-on-Insulator Spectral Filters Fabricated with CMOS Technology,” J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010). [CrossRef]
- D. Marris-Morini, L. Vivien, J.-M. Fédéli, E. Cassan, Ph. Lyan, and S. Laval, “Low loss and high speed silicon optical modulator based on a lateral carrier depletion structure,” Opt. Express 16(1), 334–339 (2008). [CrossRef] [PubMed]
- J. M. Fedeli, L. Di Cioccio, D. Marris-Morini, L. Vivien, R. Orobtchouk, P. Rojo-Romeo, C. Seassal, and F. Mandorlo, “Development of Silicon Photonics Devices Using Microelectronic Tools for the Integration on Top of a CMOS Wafer,” Adv. Opt.Technol. 2008, 412518 (2008).
- L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J. F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007). [CrossRef] [PubMed]
- A. Katz, B. E. Weir, and W. C. Dautremont-Smith, “Au/Pt/Ti contacts to p-In0.53Ga0.47As and n-InP layers formed by a single metallization common step and rapid thermal processing,” J. Appl. Phys. 68(3), 1123–1128 (1990). [CrossRef]
- X. Sun, A. Zadok, M. J. Shearn, K. A. Diest, A. Ghaffari, H. A. Atwater, A. Scherer, and A. Yariv, “Electrically pumped hybrid evanescent Si/InGaAsP lasers,” Opt. Lett. 34(9), 1345–1347 (2009). [CrossRef] [PubMed]
- X. Sun, H.-C. Liu, and A. Yariv, “Adiabaticity criterion and the shortest adiabatic mode transformer in a coupled-waveguide system,” Opt. Lett. 34(3), 280–282 (2009). [CrossRef] [PubMed]
- X. Sun and A. Yariv, “Engineering supermode silicon/III–V hybrid waveguides for laser oscillation,” J. Opt. Soc. Am. B 25(6), 923–926 (2008). [CrossRef]
- A. Yariv and X. K. Sun, “Supermode Si/III-V hybrid lasers, optical amplifiers and modulators: A proposal and analysis,” Opt. Express 15(15), 9147–9151 (2007). [CrossRef] [PubMed]
- M. Kostrzewa, L. Di Cioccio, M. Zussy, J. C. Roussin, J. M. Fedeli, N. Kernevez, P. Regreny, C. Lagahe-Blanchard, and B. Aspar, “InP dies transferred onto silicon substrate for optical interconnects application,” Sens. Actuators A Phys. 125(2), 411–414 (2006). [CrossRef]
Adv. Opt.Technol.
- J. M. Fedeli, L. Di Cioccio, D. Marris-Morini, L. Vivien, R. Orobtchouk, P. Rojo-Romeo, C. Seassal, and F. Mandorlo, “Development of Silicon Photonics Devices Using Microelectronic Tools for the Integration on Top of a CMOS Wafer,” Adv. Opt.Technol. 2008, 412518 (2008).
Appl. Phys. Lett.
- B. Gelloz, A. Kojima, and N. Koshida, “Highly efficient and stable luminescence of nanocrystalline porous silicon treated by high-pressure water vapor annealing,” Appl. Phys. Lett. 87(3), 031107 (2005). [CrossRef]
IEEE J. Sel. Top. Quantum Electron.
- K. Kato and Y. Tohmori, “PLC hybrid integration technology and its application to photonic components,” IEEE J. Sel. Top. Quantum Electron. 6(1), 4–13 (2000). [CrossRef]
IEEE Photon. Technol. Lett.
- K. Solehmainen, M. Kapulainen, P. Heimala, and K. Polamo, “Erbium doped waveguides fabricated with atomic layer deposition method,” IEEE Photon. Technol. Lett. 16(1), 194–196 (2004). [CrossRef]
- B. Ben Bakir, A. V. de Gyves, R. Orobtchouk, P. Lyan, C. Porzier, A. Roman, and J.-M. Fedeli, “Low loss (<1dB) and Polarization-Insensitive Edge Fiber Couplers fabricated on 200 mm Silicon-on-Insulator wafers,” IEEE Photon. Technol. Lett. 22(11), 739–741 (2010). [CrossRef]
- J. E. Bowers, J. Piprek, Y. J. Chiu, D. Lofgreen, P. Abraham, K. A. Black, and A. Karim, “Super lattice barrier 1528-nm vertical-cavity laser with 85°C continuous-wave operation,” IEEE Photon. Technol. Lett. 12(11), 1438–1440 (2000). [CrossRef]
IEEE Trans. Adv. Packag.
- J. Sasaki, M. Itoh, T. Tamanuki, H. Hatakeyama, S. Kitamura, T. Shimoda, and T. Kato, “Multiple-chip precise self-aligned assembly for hybrid integrated optical modules using Au-Sn solder bumps,” IEEE Trans. Adv. Packag. 24(2), 569–575 (2001). [CrossRef]
J. Appl. Phys.
- A. Katz, B. E. Weir, and W. C. Dautremont-Smith, “Au/Pt/Ti contacts to p-In0.53Ga0.47As and n-InP layers formed by a single metallization common step and rapid thermal processing,” J. Appl. Phys. 68(3), 1123–1128 (1990). [CrossRef]
J. Cryst. Growth
- H. Kroemer, T. Liu, and P. Petroff, “GaAs on Si and related systems: Problems and prospects,” J. Cryst. Growth 95(1-4), 96–102 (1989). [CrossRef]
J. Opt. Soc. Am. B
- X. Sun and A. Yariv, “Engineering supermode silicon/III–V hybrid waveguides for laser oscillation,” J. Opt. Soc. Am. B 25(6), 923–926 (2008). [CrossRef]
J. Sel. Top. Quantum Electron.
- W. Bogaerts, S. Selvaraja, P. Dumon, J. Brouckaert, K. De Vos, D. Van Thourhout, and R. Baets, ““Silicon-on-Insulator Spectral Filters Fabricated with CMOS Technology,” J. Sel. Top. Quantum Electron. 16(1), 33–44 (2010). [CrossRef]
Laser Photonics Rev.
- G. Roelkens, L. Liu, D. Liang, R. Jones, A. W. Fang, B. R. Koch, and J. E. Bowers, “III-V/silicon photonics for on-chip and intra-chip optical interconnects,” Laser Photonics Rev. 4(6), 751–779 (2010). [CrossRef]
Nature
- L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000). [CrossRef] [PubMed]
- G. T. Reed, “Device physics: the optical age of silicon,” Nature 427(6975), 595–596 (2004). [CrossRef] [PubMed]
- H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature 433(7027), 725–728 (2005). [CrossRef] [PubMed]
Opt. Express
- A. W. Fang, R. Jones, H. Park, O. Cohen, O. Raday, M. J. Paniccia, and J. E. Bowers, “Integrated AlGaInAs-silicon evanescent race track laser and photodetector,” Opt. Express 15(5), 2315–2322 (2007). [CrossRef] [PubMed]
- A. W. Fang, E. Lively, Y.-H. Kuo, D. Liang, and J. E. Bowers, “A distributed feedback silicon evanescent laser,” Opt. Express 16(7), 4413–4419 (2008). [CrossRef] [PubMed]
- A. Yariv and X. K. Sun, “Supermode Si/III-V hybrid lasers, optical amplifiers and modulators: A proposal and analysis,” Opt. Express 15(15), 9147–9151 (2007). [CrossRef] [PubMed]
- B. Corcoran, C. Monat, M. Pelusi, C. Grillet, T. P. White, L. O’Faolain, T. F. Krauss, B. J. Eggleton, and D. J. Moss, “Optical signal processing on a silicon chip at 640Gb/s using slow-light,” Opt. Express 18(8), 7770–7781 (2010). [CrossRef] [PubMed]
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- L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J. F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007). [CrossRef] [PubMed]
- O. Boyraz and B. Jalali, “Demonstration of a silicon Raman laser,” Opt. Express 12(21), 5269–5273 (2004). [CrossRef] [PubMed]
- A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express 14(20), 9203–9210 (2006). [CrossRef] [PubMed]
Opt. Lett.
- X. Sun, A. Zadok, M. J. Shearn, K. A. Diest, A. Ghaffari, H. A. Atwater, A. Scherer, and A. Yariv, “Electrically pumped hybrid evanescent Si/InGaAsP lasers,” Opt. Lett. 34(9), 1345–1347 (2009). [CrossRef] [PubMed]
- J. Liu, X. Sun, R. Camacho-Aguilera, L. C. Kimerling, and J. Michel, “Ge-on-Si laser operating at room temperature,” Opt. Lett. 35(5), 679–681 (2010). [CrossRef] [PubMed]
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- X. Sun, H.-C. Liu, and A. Yariv, “Adiabaticity criterion and the shortest adiabatic mode transformer in a coupled-waveguide system,” Opt. Lett. 34(3), 280–282 (2009). [CrossRef] [PubMed]
Sens. Actuators A Phys.
- M. Kostrzewa, L. Di Cioccio, M. Zussy, J. C. Roussin, J. M. Fedeli, N. Kernevez, P. Regreny, C. Lagahe-Blanchard, and B. Aspar, “InP dies transferred onto silicon substrate for optical interconnects application,” Sens. Actuators A Phys. 125(2), 411–414 (2006). [CrossRef]
Other
- Silicon photonics II, edited by D. Lockwood and L. Pavesi, Topics in Applied Physics, Springer Verlag (2010).
2010, Ben Bakir, IEEE Photon. Technol. Lett.
- B. Ben Bakir, A. V. de Gyves, R. Orobtchouk, P. Lyan, C. Porzier, A. Roman, and J.-M. Fedeli, “Low loss (<1dB) and Polarization-Insensitive Edge Fiber Couplers fabricated on 200 mm Silicon-on-Insulator wafers,” IEEE Photon. Technol. Lett. 22(11), 739–741 (2010). [CrossRef]
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