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THz emission characteristics from p/n junctions with metal lines under non-bias conditions for LSI failure analysis |
Optics Express, Vol. 19, Issue 11, pp. 10864-10873 (2011)
http://dx.doi.org/10.1364/OE.19.010864
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Abstract
We have investigated the characteristics of THz emissions from p/n junctions with metallic lines under non-bias conditions. The waveforms, spectra, and polarizations depend on the length and shape of the lines. This indicates that the transient photocurrents from p/n junctions flow into the metallic lines that emit THz waves and act as an antenna. We have successfully demonstrated the non-contact inspection of open defects of multi-layered interconnects in a large-scale integrated circuit using the laser THz emission microscope (LTEM). The p/n junctions connected to the defective interconnects can be identified by comparing the LTEM images of normal and defective circuits.
© 2011 OSA
OCIS Codes
(300.2140) Spectroscopy : Emission
(110.6795) Imaging systems : Terahertz imaging
ToC Category:
Spectroscopy
History
Original Manuscript: February 23, 2011
Revised Manuscript: April 28, 2011
Manuscript Accepted: May 17, 2011
Published: May 19, 2011
Citation
Masatsugu Yamashita, Chiko Otani, Toru Matsumoto, Yoshihiro Midoh, Katsuyoshi Miura, Koji Nakamae, Kiyoshi Nikawa, Sunmi Kim, Hironaru Murakami, and Masayoshi Tonouchi, "THz emission characteristics from p/n junctions with metal lines under non-bias conditions for LSI failure analysis," Opt. Express 19, 10864-10873 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-11-10864
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