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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 11 — May. 23, 2011
  • pp: 10967–10972

36 GHz submicron silicon waveguide germanium photodetector

Shirong Liao, Ning-Ning Feng, Dazeng Feng, Po Dong, Roshanak Shafiiha, Cheng-Chih Kung, Hong Liang, Wei Qian, Yong Liu, Joan Fong, John E. Cunningham, Ying Luo, and Mehdi Asghari  »View Author Affiliations


Optics Express, Vol. 19, Issue 11, pp. 10967-10972 (2011)
http://dx.doi.org/10.1364/OE.19.010967


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Abstract

We present two effective approaches to improve the responsivity of high speed waveguide-based Ge photodetectors integrated on a 0.25μm silicon-on-insulator (SOI) platform. The main cause of poor responsivity is identified as metal absorption from the top contact to Ge. By optimizing Ge thickness and offsetting the contact window, we have demonstrated that the responsivity can be improved from 0.6A/W to 0.95A/W at 1550nm with 36GHz 3dB bandwidth. We also demonstrate that a wider device with double offset contacts can achieve 1.05A/W responsivity at 1550nm and 20GHz 3dB bandwidth.

© 2011 OSA

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(200.4650) Optics in computing : Optical interconnects
(230.5160) Optical devices : Photodetectors

ToC Category:
Integrated Optics

History
Original Manuscript: February 24, 2011
Revised Manuscript: May 10, 2011
Manuscript Accepted: May 17, 2011
Published: May 20, 2011

Citation
Shirong Liao, Ning-Ning Feng, Dazeng Feng, Po Dong, Roshanak Shafiiha, Cheng-Chih Kung, Hong Liang, Wei Qian, Yong Liu, Joan Fong, John E. Cunningham, Ying Luo, and Mehdi Asghari, "36 GHz submicron silicon waveguide germanium photodetector," Opt. Express 19, 10967-10972 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-11-10967


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