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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 12 — Jun. 6, 2011
  • pp: 11507–11516

High contrast 40Gbit/s optical modulation in silicon

D. J. Thomson, F. Y. Gardes, Y. Hu, G. Mashanovich, M. Fournier, P. Grosse, J-M. Fedeli, and G. T. Reed  »View Author Affiliations


Optics Express, Vol. 19, Issue 12, pp. 11507-11516 (2011)
http://dx.doi.org/10.1364/OE.19.011507


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Abstract

Data interconnects are on the verge of a revolution. Electrical links are increasingly being pushed to their limits with the ever increasing demand for bandwidth. Data transmission in the optical domain is a leading candidate to satisfy this need. The optical modulator is key to most applications and increasing the data rate at which it operates is important for reducing power consumption, increasing channel bandwidth limitations and improving the efficiency of infrastructure usage. In this work silicon based devices of lengths 3.5mm and 1mm operating at 40Gbit/s are demonstrated with extinction ratios of up to 10dB and 3.5dB respectively. The efficiency and optical loss of the phase shifter is 2.7V.cm and 4dB/mm (or 4.5dB/mm including waveguide loss) respectively.

© 2011 OSA

OCIS Codes
(060.4080) Fiber optics and optical communications : Modulation
(130.4110) Integrated optics : Modulators

ToC Category:
Integrated Optics

History
Original Manuscript: March 23, 2011
Revised Manuscript: May 22, 2011
Manuscript Accepted: May 23, 2011
Published: May 31, 2011

Citation
D. J. Thomson, F. Y. Gardes, Y. Hu, G. Mashanovich, M. Fournier, P. Grosse, J-M. Fedeli, and G. T. Reed, "High contrast 40Gbit/s optical modulation in silicon," Opt. Express 19, 11507-11516 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-12-11507


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References

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