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42.7 Gbit/s electro-optic modulator in silicon technologyL. Alloatti, D. Korn, R. Palmer, D. Hillerkuss, J. Li, A. Barklund, R. Dinu, J. Wieland, M. Fournier, J. Fedeli, H. Yu, W. Bogaerts, P. Dumon, R. Baets, C. Koos, W. Freude, and J. Leuthold »View Author Affiliations
L. Alloatti,1,2,*
D. Korn,1
R. Palmer,1
D. Hillerkuss,1
J. Li,1
A. Barklund,3
R. Dinu,3
J. Wieland,3
M. Fournier,4
J. Fedeli,4
H. Yu,5
W. Bogaerts,5
P. Dumon,5
R. Baets,5
C. Koos,1,2
W. Freude,1,2
and J. Leuthold1,2
1Institute of Photonics and Quantum Electronics (IPQ), Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany 2Institute of Microstructure Technology (IMT), Karlsruhe Institute of Technology (KIT) Germany 3GigOptix Inc., Switzerland and GigOptix Bothell, Washington, USA 4CEA, LETI, Minatec 17 rue des Martyrs, 38054 Grenoble, France 5Photonics Research Group, Ghent University – IMEC, Department of Information Technology, 9000 Gent, Belgium *Corresponding author: luca.alloatti@kit.edu |
Optics Express, Vol. 19, Issue 12, pp. 11841-11851 (2011)
http://dx.doi.org/10.1364/OE.19.011841
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Abstract
CMOS-compatible optical modulators are key components for future silicon-based photonic transceivers. However, achieving low modulation voltage and high speed operation still remains a challenge. As a possible solution, the silicon-organic hybrid (SOH) platform has been proposed. In the SOH approach the optical signal is guided by a silicon waveguide while the electro-optic effect is provided by an organic cladding with a high χ(2)-nonlinearity. In these modulators the optical nonlinear region needs to be connected to the modulating electrical source. This requires electrodes, which are both optically transparent and electrically highly conductive. To this end we introduce a highly conductive electron accumulation layer which is induced by an external DC “gate” voltage. As opposed to doping, the electron mobility is not impaired by impurity scattering. This way we demonstrate for the first time data encoding with an SOH electro-optic modulator. Using a first-generation device at a data-rate of 42.7 Gbit/s, widely open eye diagrams were recorded. The measured frequency response suggests that significantly larger data rates are feasible.
© 2011 OSA
OCIS Codes
(060.4080) Fiber optics and optical communications : Modulation
(230.7370) Optical devices : Waveguides
(250.5300) Optoelectronics : Photonic integrated circuits
(250.7360) Optoelectronics : Waveguide modulators
ToC Category:
Optoelectronics
History
Original Manuscript: April 14, 2011
Revised Manuscript: May 27, 2011
Manuscript Accepted: May 30, 2011
Published: June 3, 2011
Citation
L. Alloatti, D. Korn, R. Palmer, D. Hillerkuss, J. Li, A. Barklund, R. Dinu, J. Wieland, M. Fournier, J. Fedeli, H. Yu, W. Bogaerts, P. Dumon, R. Baets, C. Koos, W. Freude, and J. Leuthold, "42.7 Gbit/s electro-optic modulator in silicon technology," Opt. Express 19, 11841-11851 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-12-11841
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