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Electroluminescence of ZnO nanocrystal in sputtered ZnO-SiO2 nanocomposite light-emitting devicesJiun-Ting Chen, Wei-Chih Lai, Chi-Heng Chen, Ya-Yu Yang, Jinn-Kong Sheu, and Li-Wen Lai »View Author Affiliations
Jiun-Ting Chen,1
Wei-Chih Lai,1,2,*
Chi-Heng Chen,1
Ya-Yu Yang,1
Jinn-Kong Sheu,1,2
and Li-Wen Lai3
1Institute of Electro-Optical Science and Engineering, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan City 70101, Taiwan 2Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan City 70101, Taiwan 3ITRI South, Industrial Technology Research Institute, Tainan County 734, Taiwan *Corresponding author: weilai@mail.ncku.edu.tw |
Optics Express, Vol. 19, Issue 12, pp. 11873-11879 (2011)
http://dx.doi.org/10.1364/OE.19.011873
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Abstract
We have demonstrated the electroluminescence (EL) of Ga:ZnO/i-ZnO-SiO2 nanocomposite/p-GaN n-i-p heterostructure light-emitting devices (LEDs). ZnO nano-clusters with sizes distributing from 2 to 7nm were found inside the co-sputtered i-ZnO-SiO2 nanocomposite layer under the observation of high-resolution transparent electron microscope. A clear UV EL at 376 nm from i-ZnO-SiO2 nanocomposite in these p-i-n heterostructure LEDs was observed under the forward current of 9 mA. The EL emission peak at 376 and 427nm of the Ga:ZnO/i-ZnO-SiO2 nanocomposite/p-GaN n-i-p heterostructure LEDs were attributed to the radiative recombination from the ZnO clusters and the Mg acceptor levels in the p-GaN layer, respectively.
© 2011 OSA
OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(220.4241) Optical design and fabrication : Nanostructure fabrication
ToC Category:
Optical Devices
History
Original Manuscript: March 30, 2011
Revised Manuscript: May 14, 2011
Manuscript Accepted: May 23, 2011
Published: June 3, 2011
Citation
Jiun-Ting Chen, Wei-Chih Lai, Chi-Heng Chen, Ya-Yu Yang, Jinn-Kong Sheu, and Li-Wen Lai, "Electroluminescence of ZnO nanocrystal in sputtered ZnO-SiO2 nanocomposite light-emitting devices," Opt. Express 19, 11873-11879 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-12-11873
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- X. L. Wu, G. G. Siu, C. L. Fu, and H. C. Ong, “Photoluminescence and cathodoluminescence studies of stoichiometric and oxygen-deficient ZnO films,” Appl. Phys. Lett. 78(16), 2285–2287 (2001). [CrossRef]
- A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light- emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2005). [CrossRef]
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- D. M. Bagnall, Y. F. Chen, Z. Zhu, T. Yao, M. Y. Shen, and T. Goto, “High temperature excitonic stimulated emission from ZnO epitaxial layers,” Appl. Phys. Lett. 73(8), 1038–1040 (1998). [CrossRef]
- J. D. Ye, S. L. Gu, S. M. Zhu, W. Liu, S. M. Liu, R. Zhang, Y. Shi, and Y. D. Zheng, “Electroluminescent and transport mechanisms of n-ZnO/p-Si heterojunctions,” Appl. Phys. Lett. 88(18), 182112-182114(2006). [CrossRef]
- R. Hong, H. Qi, J. Huang, H. He, Z. Fan, and J. Shao, “Influence of oxygen partial pressure on the structure and photoluminescence of direct current reactive magnetron sputtering ZnO thin films,” Thin Solid Films 473(1), 58–62 (2005). [CrossRef]
- H. Ohta, K. Kawamura, M. Orita, M. Hirano, N. Sarukura, and H. Hosono, “Current injection emission from a transparent p –n junction composed of p-SrCu2O2 /n-ZnO,” Appl. Phys. Lett. 77(4), 475–477 (2000). [CrossRef]
- R. Hong, H. Qi, J. Huang, H. He, Z. Fan, and J. Shao, “Influence of oxygen partial pressure on the structure and photoluminescence of direct current reactive magnetron sputtering ZnO thin films,” Thin Solid Films 473(1), 58–62 (2005). [CrossRef]
- H. Ohta, K. Kawamura, M. Orita, M. Hirano, N. Sarukura, and H. Hosono, “Current injection emission from a transparent p –n junction composed of p-SrCu2O2 /n-ZnO,” Appl. Phys. Lett. 77(4), 475–477 (2000). [CrossRef]
- R. Hong, H. Qi, J. Huang, H. He, Z. Fan, and J. Shao, “Influence of oxygen partial pressure on the structure and photoluminescence of direct current reactive magnetron sputtering ZnO thin films,” Thin Solid Films 473(1), 58–62 (2005). [CrossRef]
- D. C. Look, D. C. Reynolds, C. W. Litton, R. L. Jones, D. B. Eason, and G. Cantwell, “Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy,” Appl. Phys. Lett. 81(10), 1830–1832 (2002). [CrossRef]
- Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, “Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6HSiC substrates,” Appl. Phys. Lett. 83(23), 4719–4721 (2003). [CrossRef]
- S. Monticone, R. Tufeu, and A. V. Kanaev, “Complex nature of the UV and visible fluorescence of colloidal ZnO nanoparticles,” J. Phys. Chem. B 102(16), 2854–2862 (1998). [CrossRef]
- H. Ohta, K. Kawamura, M. Orita, M. Hirano, N. Sarukura, and H. Hosono, “Current injection emission from a transparent p –n junction composed of p-SrCu2O2 /n-ZnO,” Appl. Phys. Lett. 77(4), 475–477 (2000). [CrossRef]
- A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light- emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2005). [CrossRef]
- J. Y. Lee, J. H. Lee, H. S. Kim, C. H. Lee, H. S. Ahn, H. K. Cho, Y. Y. Kim, B. H. Kong, and H. S. Lee, “A study on the origin of emission of the annealed n-ZnO/p-GaN heterostructure LED,” Thin Solid Films 517(17), 5157–5160 (2009). [CrossRef]
- S. Kim, F. Lugo, S. J. Pearton, D. P. Norton, Y.-L. Wang, and F. Ren, “Phosphorus doped ZnO light emitting diodes fabricated via pulsed laser deposition,” Appl. Phys. Lett. 92(11), 112108-112110(2008). [CrossRef]
- J. Y. Lee, J. H. Lee, H. S. Kim, C. H. Lee, H. S. Ahn, H. K. Cho, Y. Y. Kim, B. H. Kong, and H. S. Lee, “A study on the origin of emission of the annealed n-ZnO/p-GaN heterostructure LED,” Thin Solid Films 517(17), 5157–5160 (2009). [CrossRef]
- A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light- emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2005). [CrossRef]
- J. Y. Lee, J. H. Lee, H. S. Kim, C. H. Lee, H. S. Ahn, H. K. Cho, Y. Y. Kim, B. H. Kong, and H. S. Lee, “A study on the origin of emission of the annealed n-ZnO/p-GaN heterostructure LED,” Thin Solid Films 517(17), 5157–5160 (2009). [CrossRef]
- M. J. Chen, Y. T. Shih, M. K. Wu, H. C. Chen, H. L. Tsai, W. C. Li, J. R. Yang, H. Kuan, and M. Shiojiri, “Structure and Ultraviolet Electroluminescence of n-ZnO/SiO2-ZnO Nanocomposite/p-GaN Heterostructure Light-Emitting Diodes,” IEEE Trans. Electron. Dev. 57(9), 2195–2202 (2010). [CrossRef]
- Y. T. Shih, M. K. Wu, W. C. Li, H. Kuan, J. R. Yang, M. Shiojiri, and M. J. Chen, “Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots–SiO2 composite/p-AlGaN heterojunction light-emitting diodes,” Nanotechnology 20(16), 1–8 (2009). [CrossRef]
- J. Y. Lee, J. H. Lee, H. S. Kim, C. H. Lee, H. S. Ahn, H. K. Cho, Y. Y. Kim, B. H. Kong, and H. S. Lee, “A study on the origin of emission of the annealed n-ZnO/p-GaN heterostructure LED,” Thin Solid Films 517(17), 5157–5160 (2009). [CrossRef]
- J. Y. Lee, J. H. Lee, H. S. Kim, C. H. Lee, H. S. Ahn, H. K. Cho, Y. Y. Kim, B. H. Kong, and H. S. Lee, “A study on the origin of emission of the annealed n-ZnO/p-GaN heterostructure LED,” Thin Solid Films 517(17), 5157–5160 (2009). [CrossRef]
- J. Y. Lee, J. H. Lee, H. S. Kim, C. H. Lee, H. S. Ahn, H. K. Cho, Y. Y. Kim, B. H. Kong, and H. S. Lee, “A study on the origin of emission of the annealed n-ZnO/p-GaN heterostructure LED,” Thin Solid Films 517(17), 5157–5160 (2009). [CrossRef]
- J. Y. Lee, J. H. Lee, H. S. Kim, C. H. Lee, H. S. Ahn, H. K. Cho, Y. Y. Kim, B. H. Kong, and H. S. Lee, “A study on the origin of emission of the annealed n-ZnO/p-GaN heterostructure LED,” Thin Solid Films 517(17), 5157–5160 (2009). [CrossRef]
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- M. J. Chen, Y. T. Shih, M. K. Wu, H. C. Chen, H. L. Tsai, W. C. Li, J. R. Yang, H. Kuan, and M. Shiojiri, “Structure and Ultraviolet Electroluminescence of n-ZnO/SiO2-ZnO Nanocomposite/p-GaN Heterostructure Light-Emitting Diodes,” IEEE Trans. Electron. Dev. 57(9), 2195–2202 (2010). [CrossRef]
- Y. T. Shih, M. K. Wu, W. C. Li, H. Kuan, J. R. Yang, M. Shiojiri, and M. J. Chen, “Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots–SiO2 composite/p-AlGaN heterojunction light-emitting diodes,” Nanotechnology 20(16), 1–8 (2009). [CrossRef]
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- J. D. Ye, S. L. Gu, S. M. Zhu, W. Liu, S. M. Liu, R. Zhang, Y. Shi, and Y. D. Zheng, “Electroluminescent and transport mechanisms of n-ZnO/p-Si heterojunctions,” Appl. Phys. Lett. 88(18), 182112-182114(2006). [CrossRef]
- J. D. Ye, S. L. Gu, S. M. Zhu, W. Liu, S. M. Liu, R. Zhang, Y. Shi, and Y. D. Zheng, “Electroluminescent and transport mechanisms of n-ZnO/p-Si heterojunctions,” Appl. Phys. Lett. 88(18), 182112-182114(2006). [CrossRef]
- J. G. Ma, Y. C. Liu, C. S. Xu, Y. X. Liu, C. L. Shao, H. Y. Xu, J. Y. Zhang, Y. M. Lu, D. Z. Shen, and X. W. Fan, “Preparation and characterization of ZnO particles embedded in SiO2 matrix by reactive magnetron sputtering,” J. Appl. Phys. 97(10), 103509 (2005). [CrossRef]
- J. G. Ma, Y. C. Liu, C. S. Xu, Y. X. Liu, C. L. Shao, H. Y. Xu, J. Y. Zhang, Y. M. Lu, D. Z. Shen, and X. W. Fan, “Preparation and characterization of ZnO particles embedded in SiO2 matrix by reactive magnetron sputtering,” J. Appl. Phys. 97(10), 103509 (2005). [CrossRef]
- Y. I. Alivov, J. E. V. Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 83(14), 2943–2945 (2003). [CrossRef]
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- D. C. Look, D. C. Reynolds, C. W. Litton, R. L. Jones, D. B. Eason, and G. Cantwell, “Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy,” Appl. Phys. Lett. 81(10), 1830–1832 (2002). [CrossRef]
- J. G. Ma, Y. C. Liu, C. S. Xu, Y. X. Liu, C. L. Shao, H. Y. Xu, J. Y. Zhang, Y. M. Lu, D. Z. Shen, and X. W. Fan, “Preparation and characterization of ZnO particles embedded in SiO2 matrix by reactive magnetron sputtering,” J. Appl. Phys. 97(10), 103509 (2005). [CrossRef]
- S. Kim, F. Lugo, S. J. Pearton, D. P. Norton, Y.-L. Wang, and F. Ren, “Phosphorus doped ZnO light emitting diodes fabricated via pulsed laser deposition,” Appl. Phys. Lett. 92(11), 112108-112110(2008). [CrossRef]
- V. A. L. Roy, A. B. Djurišić, W. K. Chan, J. Gao, H. F. Lui, and C. Surya, “Luminescent and structural properties of ZnO nanorods prepared under different conditions,” Appl. Phys. Lett. 83(1), 141–143 (2003). [CrossRef]
- J. G. Ma, Y. C. Liu, C. S. Xu, Y. X. Liu, C. L. Shao, H. Y. Xu, J. Y. Zhang, Y. M. Lu, D. Z. Shen, and X. W. Fan, “Preparation and characterization of ZnO particles embedded in SiO2 matrix by reactive magnetron sputtering,” J. Appl. Phys. 97(10), 103509 (2005). [CrossRef]
- L. Mädler, W. J. Stark, and S. E. Pratsinis, “Rapid synthesis of stable ZnO quantum dots,” J. Appl. Phys. 92(11), 6537–6540 (2002). [CrossRef]
- A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light- emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2005). [CrossRef]
- I. Martil, E. Redondo, and A. Ojeda, “Influence of defects on the electrical and optical characteristics of blue light-emitting diodes on III-V nitrides,” J. Appl. Phys. 81(5), 2442–2444 (2007). [CrossRef]
- S. Monticone, R. Tufeu, and A. V. Kanaev, “Complex nature of the UV and visible fluorescence of colloidal ZnO nanoparticles,” J. Phys. Chem. B 102(16), 2854–2862 (1998). [CrossRef]
- V. Musat, E. Fortunato, S. Petrescu, and A. M. Botelho do Rego, “ZnO/SiO2 nanocomposite thin films by sol–gel method,” Phys. Status Solidi., A Appl. Mater. Sci. 205(8), 2075–2079 (2008). [CrossRef]
- Y. Dai, Y. Zhang, Q. K. Li, and C. W. Nan, “Synthesis and optical properties of tetrapod-like zinc oxide nanorods,” Chem. Phys. Lett. 358(1-2), 83–86 (2002). [CrossRef]
- S. Kim, F. Lugo, S. J. Pearton, D. P. Norton, Y.-L. Wang, and F. Ren, “Phosphorus doped ZnO light emitting diodes fabricated via pulsed laser deposition,” Appl. Phys. Lett. 92(11), 112108-112110(2008). [CrossRef]
- Y. I. Alivov, J. E. V. Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 83(14), 2943–2945 (2003). [CrossRef]
- A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light- emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2005). [CrossRef]
- H. Ohta, K. Kawamura, M. Orita, M. Hirano, N. Sarukura, and H. Hosono, “Current injection emission from a transparent p –n junction composed of p-SrCu2O2 /n-ZnO,” Appl. Phys. Lett. 77(4), 475–477 (2000). [CrossRef]
- A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light- emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2005). [CrossRef]
- A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light- emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2005). [CrossRef]
- A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light- emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2005). [CrossRef]
- I. Martil, E. Redondo, and A. Ojeda, “Influence of defects on the electrical and optical characteristics of blue light-emitting diodes on III-V nitrides,” J. Appl. Phys. 81(5), 2442–2444 (2007). [CrossRef]
- Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, “Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6HSiC substrates,” Appl. Phys. Lett. 83(23), 4719–4721 (2003). [CrossRef]
- X. L. Wu, G. G. Siu, C. L. Fu, and H. C. Ong, “Photoluminescence and cathodoluminescence studies of stoichiometric and oxygen-deficient ZnO films,” Appl. Phys. Lett. 78(16), 2285–2287 (2001). [CrossRef]
- A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light- emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2005). [CrossRef]
- H. Ohta, K. Kawamura, M. Orita, M. Hirano, N. Sarukura, and H. Hosono, “Current injection emission from a transparent p –n junction composed of p-SrCu2O2 /n-ZnO,” Appl. Phys. Lett. 77(4), 475–477 (2000). [CrossRef]
- Z. W. Pan, Z. R. Dai, and Z. L. Wang, “Electrostatic Deflections and Electromechanical Resonances of Carbon Nanotubes,” Science 291, 1947–1949 (2001). [CrossRef] [PubMed]
- S. Kim, F. Lugo, S. J. Pearton, D. P. Norton, Y.-L. Wang, and F. Ren, “Phosphorus doped ZnO light emitting diodes fabricated via pulsed laser deposition,” Appl. Phys. Lett. 92(11), 112108-112110(2008). [CrossRef]
- Y. W. Wang, L. D. Zhang, G. Z. Wang, X. S. Peng, Z. Q. Chu, and C. H. Liang, “Catalytic growth of semiconducting zinc oxide nanowires and their photoluminescence properties,” J. Cryst. Growth 234(1), 171–175 (2002). [CrossRef]
- V. Musat, E. Fortunato, S. Petrescu, and A. M. Botelho do Rego, “ZnO/SiO2 nanocomposite thin films by sol–gel method,” Phys. Status Solidi., A Appl. Mater. Sci. 205(8), 2075–2079 (2008). [CrossRef]
- L. Mädler, W. J. Stark, and S. E. Pratsinis, “Rapid synthesis of stable ZnO quantum dots,” J. Appl. Phys. 92(11), 6537–6540 (2002). [CrossRef]
- R. Hong, H. Qi, J. Huang, H. He, Z. Fan, and J. Shao, “Influence of oxygen partial pressure on the structure and photoluminescence of direct current reactive magnetron sputtering ZnO thin films,” Thin Solid Films 473(1), 58–62 (2005). [CrossRef]
- I. Martil, E. Redondo, and A. Ojeda, “Influence of defects on the electrical and optical characteristics of blue light-emitting diodes on III-V nitrides,” J. Appl. Phys. 81(5), 2442–2444 (2007). [CrossRef]
- S. Kim, F. Lugo, S. J. Pearton, D. P. Norton, Y.-L. Wang, and F. Ren, “Phosphorus doped ZnO light emitting diodes fabricated via pulsed laser deposition,” Appl. Phys. Lett. 92(11), 112108-112110(2008). [CrossRef]
- D. C. Look, D. C. Reynolds, C. W. Litton, R. L. Jones, D. B. Eason, and G. Cantwell, “Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy,” Appl. Phys. Lett. 81(10), 1830–1832 (2002). [CrossRef]
- V. A. L. Roy, A. B. Djurišić, W. K. Chan, J. Gao, H. F. Lui, and C. Surya, “Luminescent and structural properties of ZnO nanorods prepared under different conditions,” Appl. Phys. Lett. 83(1), 141–143 (2003). [CrossRef]
- H. Ohta, K. Kawamura, M. Orita, M. Hirano, N. Sarukura, and H. Hosono, “Current injection emission from a transparent p –n junction composed of p-SrCu2O2 /n-ZnO,” Appl. Phys. Lett. 77(4), 475–477 (2000). [CrossRef]
- K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant, and J. A. Voigt, “Correlation between photoluminescence and oxygen vacancies in ZnO phosphors,” Appl. Phys. Lett. 68(3), 403–405 (1996). [CrossRef]
- A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light- emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2005). [CrossRef]
- J. G. Ma, Y. C. Liu, C. S. Xu, Y. X. Liu, C. L. Shao, H. Y. Xu, J. Y. Zhang, Y. M. Lu, D. Z. Shen, and X. W. Fan, “Preparation and characterization of ZnO particles embedded in SiO2 matrix by reactive magnetron sputtering,” J. Appl. Phys. 97(10), 103509 (2005). [CrossRef]
- R. Hong, H. Qi, J. Huang, H. He, Z. Fan, and J. Shao, “Influence of oxygen partial pressure on the structure and photoluminescence of direct current reactive magnetron sputtering ZnO thin films,” Thin Solid Films 473(1), 58–62 (2005). [CrossRef]
- J. G. Ma, Y. C. Liu, C. S. Xu, Y. X. Liu, C. L. Shao, H. Y. Xu, J. Y. Zhang, Y. M. Lu, D. Z. Shen, and X. W. Fan, “Preparation and characterization of ZnO particles embedded in SiO2 matrix by reactive magnetron sputtering,” J. Appl. Phys. 97(10), 103509 (2005). [CrossRef]
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- M. J. Chen, Y. T. Shih, M. K. Wu, H. C. Chen, H. L. Tsai, W. C. Li, J. R. Yang, H. Kuan, and M. Shiojiri, “Structure and Ultraviolet Electroluminescence of n-ZnO/SiO2-ZnO Nanocomposite/p-GaN Heterostructure Light-Emitting Diodes,” IEEE Trans. Electron. Dev. 57(9), 2195–2202 (2010). [CrossRef]
- M. K. Wu, Y. T. Shih, M. J. Chen, J. R. Yang, and M. Shiojiri, “ZnO quantum dots embedded in a SiO2 nanoparticle layer grown by atomic layer deposition,” P hys,” Status Solidi RRL 3(2-3), 88–90 (2009). [CrossRef]
- Y. T. Shih, M. K. Wu, W. C. Li, H. Kuan, J. R. Yang, M. Shiojiri, and M. J. Chen, “Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots–SiO2 composite/p-AlGaN heterojunction light-emitting diodes,” Nanotechnology 20(16), 1–8 (2009). [CrossRef]
- M. J. Chen, Y. T. Shih, M. K. Wu, H. C. Chen, H. L. Tsai, W. C. Li, J. R. Yang, H. Kuan, and M. Shiojiri, “Structure and Ultraviolet Electroluminescence of n-ZnO/SiO2-ZnO Nanocomposite/p-GaN Heterostructure Light-Emitting Diodes,” IEEE Trans. Electron. Dev. 57(9), 2195–2202 (2010). [CrossRef]
- Y. T. Shih, M. K. Wu, W. C. Li, H. Kuan, J. R. Yang, M. Shiojiri, and M. J. Chen, “Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots–SiO2 composite/p-AlGaN heterojunction light-emitting diodes,” Nanotechnology 20(16), 1–8 (2009). [CrossRef]
- M. K. Wu, Y. T. Shih, M. J. Chen, J. R. Yang, and M. Shiojiri, “ZnO quantum dots embedded in a SiO2 nanoparticle layer grown by atomic layer deposition,” P hys,” Status Solidi RRL 3(2-3), 88–90 (2009). [CrossRef]
- X. L. Wu, G. G. Siu, C. L. Fu, and H. C. Ong, “Photoluminescence and cathodoluminescence studies of stoichiometric and oxygen-deficient ZnO films,” Appl. Phys. Lett. 78(16), 2285–2287 (2001). [CrossRef]
- L. Mädler, W. J. Stark, and S. E. Pratsinis, “Rapid synthesis of stable ZnO quantum dots,” J. Appl. Phys. 92(11), 6537–6540 (2002). [CrossRef]
- A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light- emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2005). [CrossRef]
- V. A. L. Roy, A. B. Djurišić, W. K. Chan, J. Gao, H. F. Lui, and C. Surya, “Luminescent and structural properties of ZnO nanorods prepared under different conditions,” Appl. Phys. Lett. 83(1), 141–143 (2003). [CrossRef]
- K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant, and J. A. Voigt, “Correlation between photoluminescence and oxygen vacancies in ZnO phosphors,” Appl. Phys. Lett. 68(3), 403–405 (1996). [CrossRef]
- M. J. Chen, Y. T. Shih, M. K. Wu, H. C. Chen, H. L. Tsai, W. C. Li, J. R. Yang, H. Kuan, and M. Shiojiri, “Structure and Ultraviolet Electroluminescence of n-ZnO/SiO2-ZnO Nanocomposite/p-GaN Heterostructure Light-Emitting Diodes,” IEEE Trans. Electron. Dev. 57(9), 2195–2202 (2010). [CrossRef]
- A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light- emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2005). [CrossRef]
- S. Monticone, R. Tufeu, and A. V. Kanaev, “Complex nature of the UV and visible fluorescence of colloidal ZnO nanoparticles,” J. Phys. Chem. B 102(16), 2854–2862 (1998). [CrossRef]
- K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant, and J. A. Voigt, “Correlation between photoluminescence and oxygen vacancies in ZnO phosphors,” Appl. Phys. Lett. 68(3), 403–405 (1996). [CrossRef]
- K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant, and J. A. Voigt, “Correlation between photoluminescence and oxygen vacancies in ZnO phosphors,” Appl. Phys. Lett. 68(3), 403–405 (1996). [CrossRef]
- Y. W. Wang, L. D. Zhang, G. Z. Wang, X. S. Peng, Z. Q. Chu, and C. H. Liang, “Catalytic growth of semiconducting zinc oxide nanowires and their photoluminescence properties,” J. Cryst. Growth 234(1), 171–175 (2002). [CrossRef]
- Y. W. Wang, L. D. Zhang, G. Z. Wang, X. S. Peng, Z. Q. Chu, and C. H. Liang, “Catalytic growth of semiconducting zinc oxide nanowires and their photoluminescence properties,” J. Cryst. Growth 234(1), 171–175 (2002). [CrossRef]
- S. Kim, F. Lugo, S. J. Pearton, D. P. Norton, Y.-L. Wang, and F. Ren, “Phosphorus doped ZnO light emitting diodes fabricated via pulsed laser deposition,” Appl. Phys. Lett. 92(11), 112108-112110(2008). [CrossRef]
- Z. W. Pan, Z. R. Dai, and Z. L. Wang, “Electrostatic Deflections and Electromechanical Resonances of Carbon Nanotubes,” Science 291, 1947–1949 (2001). [CrossRef] [PubMed]
- K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant, and J. A. Voigt, “Correlation between photoluminescence and oxygen vacancies in ZnO phosphors,” Appl. Phys. Lett. 68(3), 403–405 (1996). [CrossRef]
- S. B. Zhang, S. H. Wei, and A. Zunger, “Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO,” Phys. Rev. B 63(7), 075205–075205 (2001). [CrossRef]
- M. J. Chen, Y. T. Shih, M. K. Wu, H. C. Chen, H. L. Tsai, W. C. Li, J. R. Yang, H. Kuan, and M. Shiojiri, “Structure and Ultraviolet Electroluminescence of n-ZnO/SiO2-ZnO Nanocomposite/p-GaN Heterostructure Light-Emitting Diodes,” IEEE Trans. Electron. Dev. 57(9), 2195–2202 (2010). [CrossRef]
- M. K. Wu, Y. T. Shih, M. J. Chen, J. R. Yang, and M. Shiojiri, “ZnO quantum dots embedded in a SiO2 nanoparticle layer grown by atomic layer deposition,” P hys,” Status Solidi RRL 3(2-3), 88–90 (2009). [CrossRef]
- Y. T. Shih, M. K. Wu, W. C. Li, H. Kuan, J. R. Yang, M. Shiojiri, and M. J. Chen, “Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots–SiO2 composite/p-AlGaN heterojunction light-emitting diodes,” Nanotechnology 20(16), 1–8 (2009). [CrossRef]
- X. L. Wu, G. G. Siu, C. L. Fu, and H. C. Ong, “Photoluminescence and cathodoluminescence studies of stoichiometric and oxygen-deficient ZnO films,” Appl. Phys. Lett. 78(16), 2285–2287 (2001). [CrossRef]
- J. G. Ma, Y. C. Liu, C. S. Xu, Y. X. Liu, C. L. Shao, H. Y. Xu, J. Y. Zhang, Y. M. Lu, D. Z. Shen, and X. W. Fan, “Preparation and characterization of ZnO particles embedded in SiO2 matrix by reactive magnetron sputtering,” J. Appl. Phys. 97(10), 103509 (2005). [CrossRef]
- J. G. Ma, Y. C. Liu, C. S. Xu, Y. X. Liu, C. L. Shao, H. Y. Xu, J. Y. Zhang, Y. M. Lu, D. Z. Shen, and X. W. Fan, “Preparation and characterization of ZnO particles embedded in SiO2 matrix by reactive magnetron sputtering,” J. Appl. Phys. 97(10), 103509 (2005). [CrossRef]
- M. J. Chen, Y. T. Shih, M. K. Wu, H. C. Chen, H. L. Tsai, W. C. Li, J. R. Yang, H. Kuan, and M. Shiojiri, “Structure and Ultraviolet Electroluminescence of n-ZnO/SiO2-ZnO Nanocomposite/p-GaN Heterostructure Light-Emitting Diodes,” IEEE Trans. Electron. Dev. 57(9), 2195–2202 (2010). [CrossRef]
- Y. T. Shih, M. K. Wu, W. C. Li, H. Kuan, J. R. Yang, M. Shiojiri, and M. J. Chen, “Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots–SiO2 composite/p-AlGaN heterojunction light-emitting diodes,” Nanotechnology 20(16), 1–8 (2009). [CrossRef]
- M. K. Wu, Y. T. Shih, M. J. Chen, J. R. Yang, and M. Shiojiri, “ZnO quantum dots embedded in a SiO2 nanoparticle layer grown by atomic layer deposition,” P hys,” Status Solidi RRL 3(2-3), 88–90 (2009). [CrossRef]
- D. M. Bagnall, Y. F. Chen, Z. Zhu, T. Yao, M. Y. Shen, and T. Goto, “High temperature excitonic stimulated emission from ZnO epitaxial layers,” Appl. Phys. Lett. 73(8), 1038–1040 (1998). [CrossRef]
- J. D. Ye, S. L. Gu, S. M. Zhu, W. Liu, S. M. Liu, R. Zhang, Y. Shi, and Y. D. Zheng, “Electroluminescent and transport mechanisms of n-ZnO/p-Si heterojunctions,” Appl. Phys. Lett. 88(18), 182112-182114(2006). [CrossRef]
- J. G. Ma, Y. C. Liu, C. S. Xu, Y. X. Liu, C. L. Shao, H. Y. Xu, J. Y. Zhang, Y. M. Lu, D. Z. Shen, and X. W. Fan, “Preparation and characterization of ZnO particles embedded in SiO2 matrix by reactive magnetron sputtering,” J. Appl. Phys. 97(10), 103509 (2005). [CrossRef]
- Y. W. Wang, L. D. Zhang, G. Z. Wang, X. S. Peng, Z. Q. Chu, and C. H. Liang, “Catalytic growth of semiconducting zinc oxide nanowires and their photoluminescence properties,” J. Cryst. Growth 234(1), 171–175 (2002). [CrossRef]
- J. D. Ye, S. L. Gu, S. M. Zhu, W. Liu, S. M. Liu, R. Zhang, Y. Shi, and Y. D. Zheng, “Electroluminescent and transport mechanisms of n-ZnO/p-Si heterojunctions,” Appl. Phys. Lett. 88(18), 182112-182114(2006). [CrossRef]
- S. B. Zhang, S. H. Wei, and A. Zunger, “Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO,” Phys. Rev. B 63(7), 075205–075205 (2001). [CrossRef]
- Y. Dai, Y. Zhang, Q. K. Li, and C. W. Nan, “Synthesis and optical properties of tetrapod-like zinc oxide nanorods,” Chem. Phys. Lett. 358(1-2), 83–86 (2002). [CrossRef]
- J. D. Ye, S. L. Gu, S. M. Zhu, W. Liu, S. M. Liu, R. Zhang, Y. Shi, and Y. D. Zheng, “Electroluminescent and transport mechanisms of n-ZnO/p-Si heterojunctions,” Appl. Phys. Lett. 88(18), 182112-182114(2006). [CrossRef]
- J. D. Ye, S. L. Gu, S. M. Zhu, W. Liu, S. M. Liu, R. Zhang, Y. Shi, and Y. D. Zheng, “Electroluminescent and transport mechanisms of n-ZnO/p-Si heterojunctions,” Appl. Phys. Lett. 88(18), 182112-182114(2006). [CrossRef]
- D. M. Bagnall, Y. F. Chen, Z. Zhu, T. Yao, M. Y. Shen, and T. Goto, “High temperature excitonic stimulated emission from ZnO epitaxial layers,” Appl. Phys. Lett. 73(8), 1038–1040 (1998). [CrossRef]
- S. B. Zhang, S. H. Wei, and A. Zunger, “Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO,” Phys. Rev. B 63(7), 075205–075205 (2001). [CrossRef]
Appl. Phys. Lett.
- D. M. Bagnall, Y. F. Chen, Z. Zhu, T. Yao, M. Y. Shen, and T. Goto, “High temperature excitonic stimulated emission from ZnO epitaxial layers,” Appl. Phys. Lett. 73(8), 1038–1040 (1998). [CrossRef]
- S. Kim, F. Lugo, S. J. Pearton, D. P. Norton, Y.-L. Wang, and F. Ren, “Phosphorus doped ZnO light emitting diodes fabricated via pulsed laser deposition,” Appl. Phys. Lett. 92(11), 112108-112110(2008). [CrossRef]
- D. C. Look, D. C. Reynolds, C. W. Litton, R. L. Jones, D. B. Eason, and G. Cantwell, “Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy,” Appl. Phys. Lett. 81(10), 1830–1832 (2002). [CrossRef]
- J. D. Ye, S. L. Gu, S. M. Zhu, W. Liu, S. M. Liu, R. Zhang, Y. Shi, and Y. D. Zheng, “Electroluminescent and transport mechanisms of n-ZnO/p-Si heterojunctions,” Appl. Phys. Lett. 88(18), 182112-182114(2006). [CrossRef]
- Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, “Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6HSiC substrates,” Appl. Phys. Lett. 83(23), 4719–4721 (2003). [CrossRef]
- H. Ohta, K. Kawamura, M. Orita, M. Hirano, N. Sarukura, and H. Hosono, “Current injection emission from a transparent p –n junction composed of p-SrCu2O2 /n-ZnO,” Appl. Phys. Lett. 77(4), 475–477 (2000). [CrossRef]
- Y. I. Alivov, J. E. V. Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 83(14), 2943–2945 (2003). [CrossRef]
- K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant, and J. A. Voigt, “Correlation between photoluminescence and oxygen vacancies in ZnO phosphors,” Appl. Phys. Lett. 68(3), 403–405 (1996). [CrossRef]
- X. L. Wu, G. G. Siu, C. L. Fu, and H. C. Ong, “Photoluminescence and cathodoluminescence studies of stoichiometric and oxygen-deficient ZnO films,” Appl. Phys. Lett. 78(16), 2285–2287 (2001). [CrossRef]
- V. A. L. Roy, A. B. Djurišić, W. K. Chan, J. Gao, H. F. Lui, and C. Surya, “Luminescent and structural properties of ZnO nanorods prepared under different conditions,” Appl. Phys. Lett. 83(1), 141–143 (2003). [CrossRef]
Chem. Phys. Lett.
- Y. Dai, Y. Zhang, Q. K. Li, and C. W. Nan, “Synthesis and optical properties of tetrapod-like zinc oxide nanorods,” Chem. Phys. Lett. 358(1-2), 83–86 (2002). [CrossRef]
IEEE Trans. Electron. Dev.
- M. J. Chen, Y. T. Shih, M. K. Wu, H. C. Chen, H. L. Tsai, W. C. Li, J. R. Yang, H. Kuan, and M. Shiojiri, “Structure and Ultraviolet Electroluminescence of n-ZnO/SiO2-ZnO Nanocomposite/p-GaN Heterostructure Light-Emitting Diodes,” IEEE Trans. Electron. Dev. 57(9), 2195–2202 (2010). [CrossRef]
J. Appl. Phys.
- J. G. Ma, Y. C. Liu, C. S. Xu, Y. X. Liu, C. L. Shao, H. Y. Xu, J. Y. Zhang, Y. M. Lu, D. Z. Shen, and X. W. Fan, “Preparation and characterization of ZnO particles embedded in SiO2 matrix by reactive magnetron sputtering,” J. Appl. Phys. 97(10), 103509 (2005). [CrossRef]
- I. Martil, E. Redondo, and A. Ojeda, “Influence of defects on the electrical and optical characteristics of blue light-emitting diodes on III-V nitrides,” J. Appl. Phys. 81(5), 2442–2444 (2007). [CrossRef]
- L. Mädler, W. J. Stark, and S. E. Pratsinis, “Rapid synthesis of stable ZnO quantum dots,” J. Appl. Phys. 92(11), 6537–6540 (2002). [CrossRef]
J. Cryst. Growth
- Y. W. Wang, L. D. Zhang, G. Z. Wang, X. S. Peng, Z. Q. Chu, and C. H. Liang, “Catalytic growth of semiconducting zinc oxide nanowires and their photoluminescence properties,” J. Cryst. Growth 234(1), 171–175 (2002). [CrossRef]
J. Phys. Chem. B
- S. Monticone, R. Tufeu, and A. V. Kanaev, “Complex nature of the UV and visible fluorescence of colloidal ZnO nanoparticles,” J. Phys. Chem. B 102(16), 2854–2862 (1998). [CrossRef]
Nanotechnology
- Y. T. Shih, M. K. Wu, W. C. Li, H. Kuan, J. R. Yang, M. Shiojiri, and M. J. Chen, “Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots–SiO2 composite/p-AlGaN heterojunction light-emitting diodes,” Nanotechnology 20(16), 1–8 (2009). [CrossRef]
Nat. Mater.
- A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light- emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2005). [CrossRef]
Opt. Express
- G. Kiliani, R. Schneider, D. Litvinov, D. Gerthsen, M. Fonin, U. Rudiger, A. Leitenstorfer, and R. Bratschitsch, “Ultraviolet photoluminescence of ZnO quantum dots sputtered at room-temperature,” Opt. Express 19(2), 1641–1647 (2011). [CrossRef] [PubMed]
Phys. Rev. B
- S. B. Zhang, S. H. Wei, and A. Zunger, “Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO,” Phys. Rev. B 63(7), 075205–075205 (2001). [CrossRef]
Phys. Status Solidi., A Appl. Mater. Sci.
- V. Musat, E. Fortunato, S. Petrescu, and A. M. Botelho do Rego, “ZnO/SiO2 nanocomposite thin films by sol–gel method,” Phys. Status Solidi., A Appl. Mater. Sci. 205(8), 2075–2079 (2008). [CrossRef]
Science
- Z. W. Pan, Z. R. Dai, and Z. L. Wang, “Electrostatic Deflections and Electromechanical Resonances of Carbon Nanotubes,” Science 291, 1947–1949 (2001). [CrossRef] [PubMed]
Status Solidi RRL
- M. K. Wu, Y. T. Shih, M. J. Chen, J. R. Yang, and M. Shiojiri, “ZnO quantum dots embedded in a SiO2 nanoparticle layer grown by atomic layer deposition,” P hys,” Status Solidi RRL 3(2-3), 88–90 (2009). [CrossRef]
Thin Solid Films
- J. Y. Lee, J. H. Lee, H. S. Kim, C. H. Lee, H. S. Ahn, H. K. Cho, Y. Y. Kim, B. H. Kong, and H. S. Lee, “A study on the origin of emission of the annealed n-ZnO/p-GaN heterostructure LED,” Thin Solid Films 517(17), 5157–5160 (2009). [CrossRef]
- R. Hong, H. Qi, J. Huang, H. He, Z. Fan, and J. Shao, “Influence of oxygen partial pressure on the structure and photoluminescence of direct current reactive magnetron sputtering ZnO thin films,” Thin Solid Films 473(1), 58–62 (2005). [CrossRef]
Other
- D. C. Look, “Doping and defects in ZnO, in ZnO bulk,” in Thin Films and Nanostructures, C. Jagadish and S. J. Pearton, (Elsevier, Oxford, 2006).
2011, Kiliani, Opt. Express
- M. J. Chen, Y. T. Shih, M. K. Wu, H. C. Chen, H. L. Tsai, W. C. Li, J. R. Yang, H. Kuan, and M. Shiojiri, “Structure and Ultraviolet Electroluminescence of n-ZnO/SiO2-ZnO Nanocomposite/p-GaN Heterostructure Light-Emitting Diodes,” IEEE Trans. Electron. Dev. 57(9), 2195–2202 (2010). [CrossRef]
- Y. T. Shih, M. K. Wu, W. C. Li, H. Kuan, J. R. Yang, M. Shiojiri, and M. J. Chen, “Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots–SiO2 composite/p-AlGaN heterojunction light-emitting diodes,” Nanotechnology 20(16), 1–8 (2009). [CrossRef]
- M. K. Wu, Y. T. Shih, M. J. Chen, J. R. Yang, and M. Shiojiri, “ZnO quantum dots embedded in a SiO2 nanoparticle layer grown by atomic layer deposition,” P hys,” Status Solidi RRL 3(2-3), 88–90 (2009). [CrossRef]
- J. Y. Lee, J. H. Lee, H. S. Kim, C. H. Lee, H. S. Ahn, H. K. Cho, Y. Y. Kim, B. H. Kong, and H. S. Lee, “A study on the origin of emission of the annealed n-ZnO/p-GaN heterostructure LED,” Thin Solid Films 517(17), 5157–5160 (2009). [CrossRef]
- S. Kim, F. Lugo, S. J. Pearton, D. P. Norton, Y.-L. Wang, and F. Ren, “Phosphorus doped ZnO light emitting diodes fabricated via pulsed laser deposition,” Appl. Phys. Lett. 92(11), 112108-112110(2008). [CrossRef]
- V. Musat, E. Fortunato, S. Petrescu, and A. M. Botelho do Rego, “ZnO/SiO2 nanocomposite thin films by sol–gel method,” Phys. Status Solidi., A Appl. Mater. Sci. 205(8), 2075–2079 (2008). [CrossRef]
- I. Martil, E. Redondo, and A. Ojeda, “Influence of defects on the electrical and optical characteristics of blue light-emitting diodes on III-V nitrides,” J. Appl. Phys. 81(5), 2442–2444 (2007). [CrossRef]
- J. D. Ye, S. L. Gu, S. M. Zhu, W. Liu, S. M. Liu, R. Zhang, Y. Shi, and Y. D. Zheng, “Electroluminescent and transport mechanisms of n-ZnO/p-Si heterojunctions,” Appl. Phys. Lett. 88(18), 182112-182114(2006). [CrossRef]
- R. Hong, H. Qi, J. Huang, H. He, Z. Fan, and J. Shao, “Influence of oxygen partial pressure on the structure and photoluminescence of direct current reactive magnetron sputtering ZnO thin films,” Thin Solid Films 473(1), 58–62 (2005). [CrossRef]
- A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light- emitting diode based on ZnO,” Nat. Mater. 4(1), 42–46 (2005). [CrossRef]
- J. G. Ma, Y. C. Liu, C. S. Xu, Y. X. Liu, C. L. Shao, H. Y. Xu, J. Y. Zhang, Y. M. Lu, D. Z. Shen, and X. W. Fan, “Preparation and characterization of ZnO particles embedded in SiO2 matrix by reactive magnetron sputtering,” J. Appl. Phys. 97(10), 103509 (2005). [CrossRef]
- V. A. L. Roy, A. B. Djurišić, W. K. Chan, J. Gao, H. F. Lui, and C. Surya, “Luminescent and structural properties of ZnO nanorods prepared under different conditions,” Appl. Phys. Lett. 83(1), 141–143 (2003). [CrossRef]
- Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, “Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6HSiC substrates,” Appl. Phys. Lett. 83(23), 4719–4721 (2003). [CrossRef]
- Y. I. Alivov, J. E. V. Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes,” Appl. Phys. Lett. 83(14), 2943–2945 (2003). [CrossRef]
- D. C. Look, D. C. Reynolds, C. W. Litton, R. L. Jones, D. B. Eason, and G. Cantwell, “Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy,” Appl. Phys. Lett. 81(10), 1830–1832 (2002). [CrossRef]
- L. Mädler, W. J. Stark, and S. E. Pratsinis, “Rapid synthesis of stable ZnO quantum dots,” J. Appl. Phys. 92(11), 6537–6540 (2002). [CrossRef]
- Y. Dai, Y. Zhang, Q. K. Li, and C. W. Nan, “Synthesis and optical properties of tetrapod-like zinc oxide nanorods,” Chem. Phys. Lett. 358(1-2), 83–86 (2002). [CrossRef]
- Y. W. Wang, L. D. Zhang, G. Z. Wang, X. S. Peng, Z. Q. Chu, and C. H. Liang, “Catalytic growth of semiconducting zinc oxide nanowires and their photoluminescence properties,” J. Cryst. Growth 234(1), 171–175 (2002). [CrossRef]
- X. L. Wu, G. G. Siu, C. L. Fu, and H. C. Ong, “Photoluminescence and cathodoluminescence studies of stoichiometric and oxygen-deficient ZnO films,” Appl. Phys. Lett. 78(16), 2285–2287 (2001). [CrossRef]
- Z. W. Pan, Z. R. Dai, and Z. L. Wang, “Electrostatic Deflections and Electromechanical Resonances of Carbon Nanotubes,” Science 291, 1947–1949 (2001). [CrossRef] [PubMed]
- S. B. Zhang, S. H. Wei, and A. Zunger, “Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO,” Phys. Rev. B 63(7), 075205–075205 (2001). [CrossRef]
- H. Ohta, K. Kawamura, M. Orita, M. Hirano, N. Sarukura, and H. Hosono, “Current injection emission from a transparent p –n junction composed of p-SrCu2O2 /n-ZnO,” Appl. Phys. Lett. 77(4), 475–477 (2000). [CrossRef]
- S. Monticone, R. Tufeu, and A. V. Kanaev, “Complex nature of the UV and visible fluorescence of colloidal ZnO nanoparticles,” J. Phys. Chem. B 102(16), 2854–2862 (1998). [CrossRef]
- D. M. Bagnall, Y. F. Chen, Z. Zhu, T. Yao, M. Y. Shen, and T. Goto, “High temperature excitonic stimulated emission from ZnO epitaxial layers,” Appl. Phys. Lett. 73(8), 1038–1040 (1998). [CrossRef]
- K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant, and J. A. Voigt, “Correlation between photoluminescence and oxygen vacancies in ZnO phosphors,” Appl. Phys. Lett. 68(3), 403–405 (1996). [CrossRef]
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