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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 13 — Jun. 20, 2011
  • pp: 11969–11976

Defect-mediated resonance shift of silicon-on-insulator racetrack resonators

J. J. Ackert, J. K. Doylend, D. F. Logan, P. E. Jessop, R. Vafaei, L. Chrostowski, and A. P. Knights  »View Author Affiliations

Optics Express, Vol. 19, Issue 13, pp. 11969-11976 (2011)

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We present a study on the effects of inert ion implantation of Silicon-On-Insulator (SOI) racetrack resonators. Selective ion implantation was used to create deep-level defects within a portion of the resonator. The resonant wavelength and round-trip loss were deduced for a range of sequential post-implantation annealing temperatures from 100 to 300 °C. As the devices were annealed there was a concomitant change in the resonance wavelength, consistent with an increase in refractive index following implantation and recovery toward the pre-implanted value. A total shift in resonance wavelength of ~2.9 nm was achieved, equivalent to a 0.02 increase in refractive index. The excess loss upon implantation increased to 301 dB/cm and was reduced to 35 dB/cm following thermal annealing. In addition to providing valuable data for those incorporating defects within resonant structures, we suggest that these results present a method for permanent tuning (or trimming) of ring resonator characteristics.

© 2011 OSA

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(230.5750) Optical devices : Resonators
(250.5300) Optoelectronics : Photonic integrated circuits

ToC Category:
Integrated Optics

Original Manuscript: March 24, 2011
Revised Manuscript: May 15, 2011
Manuscript Accepted: May 27, 2011
Published: June 6, 2011

J. J. Ackert, J. K. Doylend, D. F. Logan, P. E. Jessop, R. Vafaei, L. Chrostowski, and A. P. Knights, "Defect-mediated resonance shift of silicon-on-insulator racetrack resonators," Opt. Express 19, 11969-11976 (2011)

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