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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 13 — Jun. 20, 2011
  • pp: 11969–11976

Defect-mediated resonance shift of silicon-on-insulator racetrack resonators

J. J. Ackert, J. K. Doylend, D. F. Logan, P. E. Jessop, R. Vafaei, L. Chrostowski, and A. P. Knights  »View Author Affiliations


Optics Express, Vol. 19, Issue 13, pp. 11969-11976 (2011)
http://dx.doi.org/10.1364/OE.19.011969


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Abstract

We present a study on the effects of inert ion implantation of Silicon-On-Insulator (SOI) racetrack resonators. Selective ion implantation was used to create deep-level defects within a portion of the resonator. The resonant wavelength and round-trip loss were deduced for a range of sequential post-implantation annealing temperatures from 100 to 300 °C. As the devices were annealed there was a concomitant change in the resonance wavelength, consistent with an increase in refractive index following implantation and recovery toward the pre-implanted value. A total shift in resonance wavelength of ~2.9 nm was achieved, equivalent to a 0.02 increase in refractive index. The excess loss upon implantation increased to 301 dB/cm and was reduced to 35 dB/cm following thermal annealing. In addition to providing valuable data for those incorporating defects within resonant structures, we suggest that these results present a method for permanent tuning (or trimming) of ring resonator characteristics.

© 2011 OSA

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(230.5750) Optical devices : Resonators
(250.5300) Optoelectronics : Photonic integrated circuits

ToC Category:
Integrated Optics

History
Original Manuscript: March 24, 2011
Revised Manuscript: May 15, 2011
Manuscript Accepted: May 27, 2011
Published: June 6, 2011

Citation
J. J. Ackert, J. K. Doylend, D. F. Logan, P. E. Jessop, R. Vafaei, L. Chrostowski, and A. P. Knights, "Defect-mediated resonance shift of silicon-on-insulator racetrack resonators," Opt. Express 19, 11969-11976 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-13-11969


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References

  1. L. Pavesi, and G. Guillot, “Optical Interconnects: The Silicon Approach,”,Vol. 119 Springer Series in Optical Sciences, (Springer-Verlag 2006).
  2. N. M. Wright, D. J. Thomson, K. L. Litvinenko, W. R. Headley, A. J. Smith, A. P. Knights, J. H. B. Deane, F. Y. Gardes, G. Z. Mashanovich, R. Gwilliam, and G. T. Reed, “Free carrier lifetime modification for silicon waveguide based devices,” Opt. Express 16(24), 19779–19784 (2008). [CrossRef] [PubMed]
  3. M. W. Geis, S. J. Spector, M. E. Grein, J. U. Yoon, D. M. Lennon, and T. M. Lyszczarz, “Silicon waveguide infrared photodiodes with > 35 GHz bandwidth and phototransistors with 50 AW−1 response,” Opt. Express 17(7), 5193–5204 (2009). [CrossRef] [PubMed]
  4. J. K. Doylend, P. E. Jessop, and A. P. Knights, “Silicon photonic resonator-enhanced defect-mediated photodiode for sub-bandgap detection,” Opt. Express 18(14), 14671–14678 (2010). [CrossRef] [PubMed]
  5. D. F. Logan, P. Velha, M. Sorel, R. M. De La Rue, A. P. Knights, and P. E. Jessop, “Defect-enhanced Silicon-on-insulator Waveguide Resonant Photodetector With High Sensitivity at 1.55 µm,” IEEE Photon. Technol. Lett. 22(20), 1530 (2010). [CrossRef]
  6. K. Preston, Y. H. D. Lee, M. Zhang, and M. Lipson, “Waveguide-integrated telecom-wavelength photodiode in deposited silicon,” Opt. Lett. 36(1), 52–54 (2011). [CrossRef] [PubMed]
  7. I. Kiyat, A. Aydinli, and N. Dagli, “Low-Power Thermooptical Tuning of SOI Resonator Switch,” IEEE Photon. Technol. Lett. 18(2), 364–366 (2006). [CrossRef]
  8. W. M. J. Green, M. J. Rooks, L. Sekaric, and Y. A. Vlasov, “Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zender modulator,” Opt. Express 15(25),17106–17113 (2007). [CrossRef] [PubMed]
  9. G. T. Reed, G. Mashanovich, F. Y. Gardes, and D. J. Thompson, “Silicon Optical Modulators,” Nat. Photonics 4(8), 518–526 (2010). [CrossRef]
  10. R. A. Soref and B. R. Bennett, “Electrooptical Effects in Silicon,” IEEE J. Quantum Electron. 23(1), 123–129 (1987). [CrossRef]
  11. Q. Xu, B. Schmidt, J. Shakya, and M. Lipson, “Cascaded silicon micro-ring modulators for WDM optical interconnection,” Opt. Express 14(20), 9431–9435 (2006). [CrossRef] [PubMed]
  12. C. W. White, J. Narayan, and R. T. Young, “Laser Annealing of Ion-Implanted Semiconductors,” Science 204(4392), 461–468 (1979). [CrossRef] [PubMed]
  13. W. Bogaerts, R. Baets, P. Dumon, V. Wiaux, S. Beckx, D. Taillaert, B. Luyssaert, J. Van Campenhout, P. Bientsman, and D. Van Thourhout, “Nanophotonic Waveguides in Silicon-on-Insulator Fabricated with CMOS Technology,” J. Lightwave Technol. 23(1), 401–412 (2005). [CrossRef]
  14. D. Taillaert, F. Van Laere, M. Ayre, W. Bogaerts, D. Van Thourout, P. Bientsman, and R. Baets, “Grating Couplers for Coupling between Optical Fibers and Nanophotonic Waveguides,” Jpn. J. Appl. Phys. 45(No. 8A), 6071 (2006). [CrossRef]
  15. L. Pelaz, L. A. Marqués, and J. Barbolla, “Ion-beam-induced amorphization and recrystallization in silicon,” J. Appl. Phys. 96(11), 5947 (2004). [CrossRef]
  16. P. J. Foster, J. K. Doylend, P. Mascher, A. P. Knights, and P. G. Coleman, “Optical attenuation in defect engineered silicon rib waveguides,” J. Appl. Phys. 99(7), 073101 (2006). [CrossRef]
  17. J. K. Doylend, “Defect-mediated photodetectors for silicon photonic circuits” PhD. Thesis, McMaster University (2010).
  18. T. Baehr-Jones, M. Hochberg, C. Walker, E. Chan, D. Koshinz, W. Krug, and A. Scherer, “Analysis of the tuning sensitivity of silicon-on-insulator optical ring resonators,” J. Lightwave Technol. 23(12), 4215 (2005). [CrossRef]
  19. F. Y. Gardes, A. Brimont, P. Sanchis, G. Rasigade, D. Marris-Morini, L. O’Faolain, F. Dong, J. M. Fedeli, P. Dumon, L. Vivien, T. F. Krauss, G. T. Reed, and J. Martí, “High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode,” Opt. Express 17(24), 21986–21991 (2009). [CrossRef] [PubMed]
  20. N. Rouger, L. Chrostowski, and R. Vafaei, “Temperature effects on silicon-on-insulator (SOI) racetrack resonators: A coupled analytic and 2-D finite difference approach,” J. Lightwave Technol. 28(9), 1380–1391 (2010). [CrossRef]

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