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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 13 — Jun. 20, 2011
  • pp: 12569–12581

Design and comparison of GaAs, GaAsP and InGaAlAs quantum-well active regions for 808-nm VCSELs

Yan Zhang, Yongqiang Ning, Lisen Zhang, Jinsheng Zhang, Jianwei Zhang, Zhenfu Wang, Jian Zhang, Yugang Zeng, and Lijun Wang  »View Author Affiliations


Optics Express, Vol. 19, Issue 13, pp. 12569-12581 (2011)
http://dx.doi.org/10.1364/OE.19.012569


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Abstract

Vertical-cavity surface-emitting lasers emitting at 808 nm with unstrained GaAs/Al0.3Ga0.7As, tensilely strained GaAsxP1-x/Al0.3Ga0.7As and compressively strained In1-x-yGaxAlyAs/Al0.3Ga0.7As quantum-well active regions have been investigated. A comprehensive model is presented to determine the composition and width of these quantum wells. The numerical simulation shows that the gain peak wavelength is near 800 nm at room temperature for GaAs well with width of 4 nm, GaAs0.87P0.13 well with width of 13 nm and In0.14Ga0.74Al0.12As well with width of 6 nm. Furthermore, the output characteristics of the three designed quantum-well VCSELs are studied and compared. The results indicate that In0.14Ga0.74Al0.12As is the most appropriate candidate for the quantum well of 808-nm VCSELs.

© 2011 OSA

OCIS Codes
(140.3070) Lasers and laser optics : Infrared and far-infrared lasers
(160.3380) Materials : Laser materials
(270.3430) Quantum optics : Laser theory
(140.7260) Lasers and laser optics : Vertical cavity surface emitting lasers

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: April 18, 2011
Manuscript Accepted: June 1, 2011
Published: June 14, 2011

Citation
Yan Zhang, Yongqiang Ning, Lisen Zhang, Jinsheng Zhang, Jianwei Zhang, Zhenfu Wang, Jian Zhang, Yugang Zeng, and Lijun Wang, "Design and comparison of GaAs, GaAsP and InGaAlAs quantum-well active regions for 808-nm VCSELs," Opt. Express 19, 12569-12581 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-13-12569


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