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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 13 — Jun. 20, 2011
  • pp: 12652–12657

Fabrication of phase-change Ge2Sb2Te5 nano-rings

Cheng Hung Chu, Ming Lun Tseng, Chiun Da Shiue, Shuan Wei Chen, Hai-Pang Chiang, Masud Mansuripur, and Din Ping Tsai  »View Author Affiliations


Optics Express, Vol. 19, Issue 13, pp. 12652-12657 (2011)
http://dx.doi.org/10.1364/OE.19.012652


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Abstract

Phase-change material Ge2Sb2T5 rings with nanometer-scale thickness have been fabricated using the photo-thermal effect of a focused laser beam followed by differential chemical etching. Laser irradiation conditions and etching process parameters are varied to control the geometric characteristics of the rings. We demonstrate the possibility of arranging the rings in specific geometric patterns, and also their release from the original substrate.

© 2011 OSA

OCIS Codes
(210.4810) Optical data storage : Optical storage-recording materials
(220.0220) Optical design and fabrication : Optical design and fabrication
(310.3840) Thin films : Materials and process characterization

ToC Category:
Optical Data Storage

History
Original Manuscript: April 11, 2011
Revised Manuscript: May 13, 2011
Manuscript Accepted: May 30, 2011
Published: June 15, 2011

Citation
Cheng Hung Chu, Ming Lun Tseng, Chiun Da Shiue, Shuan Wei Chen, Hai-Pang Chiang, Masud Mansuripur, and Din Ping Tsai, "Fabrication of phase-change Ge2Sb2Te5 nano-rings," Opt. Express 19, 12652-12657 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-13-12652


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