Fabrication of phase-change Ge2Sb2Te5 nano-rings

doi:10.1364/OE.19.012652

Fabrication of phase-change Ge₂Sb₂Te₅ nano-rings

Cheng Hung Chu, Ming Lun Tseng, Chiun Da Shiue, Shuan Wei Chen, Hai-Pang Chiang, Masud Mansuripur, and Din Ping Tsai »View Author Affiliations

Optics Express, Vol. 19, Issue 13, pp. 12652-12657 (2011)
http://dx.doi.org/10.1364/OE.19.012652

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Abstract

Phase-change material Ge₂Sb₂T₅ rings with nanometer-scale thickness have been fabricated using the photo-thermal effect of a focused laser beam followed by differential chemical etching. Laser irradiation conditions and etching process parameters are varied to control the geometric characteristics of the rings. We demonstrate the possibility of arranging the rings in specific geometric patterns, and also their release from the original substrate.

OCIS Codes
(210.4810) Optical data storage : Optical storage-recording materials
(220.0220) Optical design and fabrication : Optical design and fabrication
(310.3840) Thin films : Materials and process characterization

ToC Category:
Optical Data Storage

History
Original Manuscript: April 11, 2011
Revised Manuscript: May 13, 2011
Manuscript Accepted: May 30, 2011
Published: June 15, 2011

Citation
Cheng Hung Chu, Ming Lun Tseng, Chiun Da Shiue, Shuan Wei Chen, Hai-Pang Chiang, Masud Mansuripur, and Din Ping Tsai, "Fabrication of phase-change Ge₂Sb₂Te₅ nano-rings," Opt. Express 19, 12652-12657 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-13-12652

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References

S. R. Ovshinsky, “Reversible electrical switching phenomena in disordered structures,” Phys. Rev. Lett. 21(20), 1450–1453 (1968). [CrossRef]
N. Yamada, E. Ohno, K. Nishiuchi, N. Akahira, and M. Takao, “Rapid-phase transitions of GeTe-Sb2Te3 pseudobinary amorphous thin films for an optical disk memory,” J. Appl. Phys. 69(5), 2849–2856 (1991). [CrossRef]
T. Ohta, K. Nagata, I. Satoh, and R. Imanaka, “Overwritable phase-change optical disk recording,” IEEE Trans. Magn. 34(2), 426–431 (1998). [CrossRef]
T. Ohta, K. Nishiuchi, K. Narumi, Y. Kitaoka, H. Ishibashi, N. Yamada, and T. Kozaki, “Overview and the future of phase-change optical disk technology,” Jpn. J. Appl. Phys. 39(Part 1, No. 2B), 770–774 (2000). [CrossRef]
K. Nakayama, K. Kojima, Y. Imai, T. Kasai, S. Fukushima, A. Kitagawa, M. Kumeda, Y. Kakimoto, and M. Suzuki, “Nonvolatile memory based on phase change in Se-Sb-Te glass,” Jpn. J. Appl. Phys. 42(Part 1, No. 2A), 404–408 (2003). [CrossRef]
A. L. Pirovano, A. L. Lacaita, A. Benvenuti, F. Pellizzer, and R. Bez, “Electronic switching in phase-change memories,” IEEE Trans. Electron. Dev. 51(3), 452–459 (2004). [CrossRef]
W. Welnic and M. Wuttig, “Reversible switching in phase-change materials,” Mater. Today 11(6), 20–27 (2008). [CrossRef]
S. K. Lin, I. C. Lin, and D. P. Tsai, “Characterization of nano recorded marks at different writing strategies on phase-change recording layer of optical disks,” Opt. Express 14(10), 4452–4458 (2006). [CrossRef] [PubMed]
C. H. Chu, B. J. Wu, T. S. Kao, Y. H. Fu, H. P. Chiang, and D. P. Tsai, “Imaging of recording marks and their jitters with different writing strategy and terminal resistance of optical output,” IEEE Trans. Magn. 45(5), 2221–2223 (2009). [CrossRef]
C. B. Peng, L. Cheng, and M. Mansuripur, “Experimental and theoretical investigations of laser-induced crystallization and amorphization in phase-change optical recording media,” J. Appl. Phys. 82(9), 4183–4191 (1997). [CrossRef]
P. K. Khulbe, E. M. Wright, and M. Mansuripur, “Crystallization behavior of as-deposited, melt quenched, and primed amorphous states of Ge2Sb2.3Te5 film,” J. Appl. Phys. 88(7), 3926–3933 (2000). [CrossRef]
T. S. Kao, Y. H. Fu, H. W. Hsu, and D. P. Tsai, “Study of the optical response of phase-change recording layer with zinc oxide nanostructured thin film,” J. Microsc. 229(3), 561–566 (2008). [CrossRef] [PubMed]
K. P. Chiu, K. F. Lai, and D. P. Tsai, “Application of surface polariton coupling between nano recording marks to optical data storage,” Opt. Express 16(18), 13885–13892 (2008). [CrossRef] [PubMed]
S. K. Lin, P. L. Yang, I. C. Lin, H. W. Hsu, and D. P. Tsai, “Resolving nano scale recording bits on phase-change rewritable optical disk,” Jpn. J. Appl. Phys. 45(No. 2B), 1431–1434 (2006). [CrossRef]
Y. Zhang, S. Raoux, D. Krebs, L. E. Krupp, T. Topuria, M. A. Caldwell, D. J. Milliron, A. Kellock, P. M. Rice, J. L. Jordan-Sweet, and H.-S. P. Wong, “Phase change nanodots patterning using a self-assembled polymer lithography and crystallization analysis,” J. Appl. Phys. 104(7), 074312 (2008). [CrossRef]
K. Y. Yang, S. H. Hong, D. K. Kim, B. K. Cheong, and H. Lee, “Patterning of Ge2Sb2Te5 phase change material using UV nano-imprint lithography,” Microelectron. Eng. 84(1), 21–24 (2007). [CrossRef]
S. Raoux, C. T. Rettner, J. L. Jordan-Sweet, A. J. Kellock, T. Topuria, P. M. Rice, and D. C. Miller, “Direct observation of amorphous to crystalline phase transitions in nanoparticle arrays of phase change materials,” J. Appl. Phys. 102(9), 094305 (2007). [CrossRef]
H. Yoon, W. Jo, E. Lee, J. Lee, M. Kim, K. Lee, and Y. Khang, “Generation of phase-change Ge–Sb–Te nanoparticles by pulsed laser ablation,” J. Non-Cryst. Solids 351(43-45), 3430–3434 (2005). [CrossRef]
S. M. Yoon, K. J. Choi, Y. S. Park, S. Y. Lee, N. Y. Lee, and B. G. Yu, “Fabrication and electrical characterization of phase-change memory devices with nanoscale self-heating-channel structures,” Microelectron. Eng. 85(12), 2334–2337 (2008). [CrossRef]
C. H. Chu, C. Da Shiue, H. W. Cheng, M. L. Tseng, H.-P. Chiang, M. Mansuripur, and D. P. Tsai, “Laser-induced phase transitions of Ge2Sb2Te5 thin films used in optical and electronic data storage and in thermal lithography,” Opt. Express 18(17), 18383–18393 (2010). [CrossRef] [PubMed]

Akahira, N.
Benvenuti, A.
Bez, R.
Caldwell, M. A.
Cheng, H. W.
Cheng, L.
Cheong, B. K.
Chiang, H. P.
Chiang, H.-P.
Chiu, K. P.
Choi, K. J.
Chu, C. H.
Da Shiue, C.
Fu, Y. H.
Fukushima, S.
Hong, S. H.
Hsu, H. W.
Imai, Y.
Imanaka, R.
Ishibashi, H.
Jo, W.
Jordan-Sweet, J. L.
Kakimoto, Y.
Kao, T. S.
Kasai, T.
Kellock, A.
Kellock, A. J.
Khang, Y.
Khulbe, P. K.
Kim, D. K.
Kim, M.
Kitagawa, A.
Kitaoka, Y.
Kojima, K.
Kozaki, T.
Krebs, D.
Krupp, L. E.
Kumeda, M.
Lacaita, A. L.
Lai, K. F.
Lee, E.
Lee, H.
Lee, J.
Lee, K.
Lee, N. Y.
Lee, S. Y.
Lin, I. C.
Lin, S. K.
Mansuripur, M.
Miller, D. C.
Milliron, D. J.
Nagata, K.
Nakayama, K.
Narumi, K.
Nishiuchi, K.
Ohno, E.
Ohta, T.
Ovshinsky, S. R.
Park, Y. S.
Pellizzer, F.
Peng, C. B.
Pirovano, A. L.
Raoux, S.
Rettner, C. T.
Rice, P. M.
Satoh, I.
Suzuki, M.
Takao, M.
Topuria, T.
Tsai, D. P.
Tseng, M. L.
Welnic, W.
Wong, H.-S. P.
Wright, E. M.
Wu, B. J.
Wuttig, M.
Yamada, N.
Yang, K. Y.
Yang, P. L.
Yoon, H.
Yoon, S. M.
Yu, B. G.
Zhang, Y.

IEEE Trans. Electron. Dev.

A. L. Pirovano, A. L. Lacaita, A. Benvenuti, F. Pellizzer, and R. Bez, “Electronic switching in phase-change memories,” IEEE Trans. Electron. Dev. 51(3), 452–459 (2004). [CrossRef]

IEEE Trans. Magn.

T. Ohta, K. Nagata, I. Satoh, and R. Imanaka, “Overwritable phase-change optical disk recording,” IEEE Trans. Magn. 34(2), 426–431 (1998). [CrossRef]
C. H. Chu, B. J. Wu, T. S. Kao, Y. H. Fu, H. P. Chiang, and D. P. Tsai, “Imaging of recording marks and their jitters with different writing strategy and terminal resistance of optical output,” IEEE Trans. Magn. 45(5), 2221–2223 (2009). [CrossRef]

J. Appl. Phys.

C. B. Peng, L. Cheng, and M. Mansuripur, “Experimental and theoretical investigations of laser-induced crystallization and amorphization in phase-change optical recording media,” J. Appl. Phys. 82(9), 4183–4191 (1997). [CrossRef]
P. K. Khulbe, E. M. Wright, and M. Mansuripur, “Crystallization behavior of as-deposited, melt quenched, and primed amorphous states of Ge2Sb2.3Te5 film,” J. Appl. Phys. 88(7), 3926–3933 (2000). [CrossRef]
N. Yamada, E. Ohno, K. Nishiuchi, N. Akahira, and M. Takao, “Rapid-phase transitions of GeTe-Sb2Te3 pseudobinary amorphous thin films for an optical disk memory,” J. Appl. Phys. 69(5), 2849–2856 (1991). [CrossRef]
Y. Zhang, S. Raoux, D. Krebs, L. E. Krupp, T. Topuria, M. A. Caldwell, D. J. Milliron, A. Kellock, P. M. Rice, J. L. Jordan-Sweet, and H.-S. P. Wong, “Phase change nanodots patterning using a self-assembled polymer lithography and crystallization analysis,” J. Appl. Phys. 104(7), 074312 (2008). [CrossRef]
S. Raoux, C. T. Rettner, J. L. Jordan-Sweet, A. J. Kellock, T. Topuria, P. M. Rice, and D. C. Miller, “Direct observation of amorphous to crystalline phase transitions in nanoparticle arrays of phase change materials,” J. Appl. Phys. 102(9), 094305 (2007). [CrossRef]

J. Microsc.

T. S. Kao, Y. H. Fu, H. W. Hsu, and D. P. Tsai, “Study of the optical response of phase-change recording layer with zinc oxide nanostructured thin film,” J. Microsc. 229(3), 561–566 (2008). [CrossRef] [PubMed]

J. Non-Cryst. Solids

H. Yoon, W. Jo, E. Lee, J. Lee, M. Kim, K. Lee, and Y. Khang, “Generation of phase-change Ge–Sb–Te nanoparticles by pulsed laser ablation,” J. Non-Cryst. Solids 351(43-45), 3430–3434 (2005). [CrossRef]

Jpn. J. Appl. Phys.

T. Ohta, K. Nishiuchi, K. Narumi, Y. Kitaoka, H. Ishibashi, N. Yamada, and T. Kozaki, “Overview and the future of phase-change optical disk technology,” Jpn. J. Appl. Phys. 39(Part 1, No. 2B), 770–774 (2000). [CrossRef]
K. Nakayama, K. Kojima, Y. Imai, T. Kasai, S. Fukushima, A. Kitagawa, M. Kumeda, Y. Kakimoto, and M. Suzuki, “Nonvolatile memory based on phase change in Se-Sb-Te glass,” Jpn. J. Appl. Phys. 42(Part 1, No. 2A), 404–408 (2003). [CrossRef]
S. K. Lin, P. L. Yang, I. C. Lin, H. W. Hsu, and D. P. Tsai, “Resolving nano scale recording bits on phase-change rewritable optical disk,” Jpn. J. Appl. Phys. 45(No. 2B), 1431–1434 (2006). [CrossRef]

Mater. Today

W. Welnic and M. Wuttig, “Reversible switching in phase-change materials,” Mater. Today 11(6), 20–27 (2008). [CrossRef]

Microelectron. Eng.

K. Y. Yang, S. H. Hong, D. K. Kim, B. K. Cheong, and H. Lee, “Patterning of Ge2Sb2Te5 phase change material using UV nano-imprint lithography,” Microelectron. Eng. 84(1), 21–24 (2007). [CrossRef]
S. M. Yoon, K. J. Choi, Y. S. Park, S. Y. Lee, N. Y. Lee, and B. G. Yu, “Fabrication and electrical characterization of phase-change memory devices with nanoscale self-heating-channel structures,” Microelectron. Eng. 85(12), 2334–2337 (2008). [CrossRef]

Opt. Express

Phys. Rev. Lett.

S. R. Ovshinsky, “Reversible electrical switching phenomena in disordered structures,” Phys. Rev. Lett. 21(20), 1450–1453 (1968). [CrossRef]

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[1] S. R. Ovshinsky, “Reversible electrical switching phenomena in disordered structures,” Phys. Rev. Lett. 21(20), 1450–1453 (1968). [CrossRef]

[2] N. Yamada, E. Ohno, K. Nishiuchi, N. Akahira, and M. Takao, “Rapid-phase transitions of GeTe-Sb2Te3 pseudobinary amorphous thin films for an optical disk memory,” J. Appl. Phys. 69(5), 2849–2856 (1991). [CrossRef]

[3] T. Ohta, K. Nagata, I. Satoh, and R. Imanaka, “Overwritable phase-change optical disk recording,” IEEE Trans. Magn. 34(2), 426–431 (1998). [CrossRef]

[4] T. Ohta, K. Nishiuchi, K. Narumi, Y. Kitaoka, H. Ishibashi, N. Yamada, and T. Kozaki, “Overview and the future of phase-change optical disk technology,” Jpn. J. Appl. Phys. 39(Part 1, No. 2B), 770–774 (2000). [CrossRef]

[5] K. Nakayama, K. Kojima, Y. Imai, T. Kasai, S. Fukushima, A. Kitagawa, M. Kumeda, Y. Kakimoto, and M. Suzuki, “Nonvolatile memory based on phase change in Se-Sb-Te glass,” Jpn. J. Appl. Phys. 42(Part 1, No. 2A), 404–408 (2003). [CrossRef]

[6] A. L. Pirovano, A. L. Lacaita, A. Benvenuti, F. Pellizzer, and R. Bez, “Electronic switching in phase-change memories,” IEEE Trans. Electron. Dev. 51(3), 452–459 (2004). [CrossRef]

[7] W. Welnic and M. Wuttig, “Reversible switching in phase-change materials,” Mater. Today 11(6), 20–27 (2008). [CrossRef]

[8] S. K. Lin, I. C. Lin, and D. P. Tsai, “Characterization of nano recorded marks at different writing strategies on phase-change recording layer of optical disks,” Opt. Express 14(10), 4452–4458 (2006). [CrossRef] [PubMed]

[9] C. H. Chu, B. J. Wu, T. S. Kao, Y. H. Fu, H. P. Chiang, and D. P. Tsai, “Imaging of recording marks and their jitters with different writing strategy and terminal resistance of optical output,” IEEE Trans. Magn. 45(5), 2221–2223 (2009). [CrossRef]

[10] C. B. Peng, L. Cheng, and M. Mansuripur, “Experimental and theoretical investigations of laser-induced crystallization and amorphization in phase-change optical recording media,” J. Appl. Phys. 82(9), 4183–4191 (1997). [CrossRef]

[11] P. K. Khulbe, E. M. Wright, and M. Mansuripur, “Crystallization behavior of as-deposited, melt quenched, and primed amorphous states of Ge2Sb2.3Te5 film,” J. Appl. Phys. 88(7), 3926–3933 (2000). [CrossRef]

[12] T. S. Kao, Y. H. Fu, H. W. Hsu, and D. P. Tsai, “Study of the optical response of phase-change recording layer with zinc oxide nanostructured thin film,” J. Microsc. 229(3), 561–566 (2008). [CrossRef] [PubMed]

[13] K. P. Chiu, K. F. Lai, and D. P. Tsai, “Application of surface polariton coupling between nano recording marks to optical data storage,” Opt. Express 16(18), 13885–13892 (2008). [CrossRef] [PubMed]

[14] S. K. Lin, P. L. Yang, I. C. Lin, H. W. Hsu, and D. P. Tsai, “Resolving nano scale recording bits on phase-change rewritable optical disk,” Jpn. J. Appl. Phys. 45(No. 2B), 1431–1434 (2006). [CrossRef]

[15] Y. Zhang, S. Raoux, D. Krebs, L. E. Krupp, T. Topuria, M. A. Caldwell, D. J. Milliron, A. Kellock, P. M. Rice, J. L. Jordan-Sweet, and H.-S. P. Wong, “Phase change nanodots patterning using a self-assembled polymer lithography and crystallization analysis,” J. Appl. Phys. 104(7), 074312 (2008). [CrossRef]

[16] K. Y. Yang, S. H. Hong, D. K. Kim, B. K. Cheong, and H. Lee, “Patterning of Ge2Sb2Te5 phase change material using UV nano-imprint lithography,” Microelectron. Eng. 84(1), 21–24 (2007). [CrossRef]

[17] S. Raoux, C. T. Rettner, J. L. Jordan-Sweet, A. J. Kellock, T. Topuria, P. M. Rice, and D. C. Miller, “Direct observation of amorphous to crystalline phase transitions in nanoparticle arrays of phase change materials,” J. Appl. Phys. 102(9), 094305 (2007). [CrossRef]

[18] H. Yoon, W. Jo, E. Lee, J. Lee, M. Kim, K. Lee, and Y. Khang, “Generation of phase-change Ge–Sb–Te nanoparticles by pulsed laser ablation,” J. Non-Cryst. Solids 351(43-45), 3430–3434 (2005). [CrossRef]

[19] S. M. Yoon, K. J. Choi, Y. S. Park, S. Y. Lee, N. Y. Lee, and B. G. Yu, “Fabrication and electrical characterization of phase-change memory devices with nanoscale self-heating-channel structures,” Microelectron. Eng. 85(12), 2334–2337 (2008). [CrossRef]

[20] C. H. Chu, C. Da Shiue, H. W. Cheng, M. L. Tseng, H.-P. Chiang, M. Mansuripur, and D. P. Tsai, “Laser-induced phase transitions of Ge2Sb2Te5 thin films used in optical and electronic data storage and in thermal lithography,” Opt. Express 18(17), 18383–18393 (2010). [CrossRef] [PubMed]

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