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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 13 — Jun. 20, 2011
  • pp: 12658–12663

High-performance GaN metal–insulator–semiconductor ultraviolet photodetectors using gallium oxide as gate layer

Ming-Lun Lee, T. S. Mue, F.W. Huang, J. H. Yang, and J. K. Sheu  »View Author Affiliations

Optics Express, Vol. 19, Issue 13, pp. 12658-12663 (2011)

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In this study, gallium nitride (GaN)-based metal–insulator–semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with a gallium oxide (GaOx) gate layer formed by alternating current bias-assisted photoelectrochemical oxidation of n-GaN are presented. By introducing the GaOx gate layer to the GaN MIS UV PDs, the leakage current is reduced and a much larger UV-to-visible rejection ratio (RUV/vis) of spectral responsivity is achieved. In addition, a bias-dependent spectral response results in marked increase of the RUV/vis with bias voltage up to ~105. The bias-dependent responsivity suggests the possible existence of internal gain in of the GaN MIS PDs.

© 2011 OSA

OCIS Codes
(230.0040) Optical devices : Detectors
(230.0250) Optical devices : Optoelectronics
(230.5160) Optical devices : Photodetectors

ToC Category:

Original Manuscript: April 14, 2011
Revised Manuscript: May 23, 2011
Manuscript Accepted: May 24, 2011
Published: June 15, 2011

Ming-Lun Lee, T. S. Mue, F.W. Huang, J. H. Yang, and J. K. Sheu, "High-performance GaN metal–insulator–semiconductor ultraviolet photodetectors using gallium oxide as gate layer," Opt. Express 19, 12658-12663 (2011)

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