OSA's Digital Library

Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 14 — Jul. 4, 2011
  • pp: 12919–12924

Orange a-plane InGaN/GaN light-emitting diodes grown on r-plane sapphire substrates

Yong Gon Seo, Kwang Hyeon Baik, Hooyoung Song, Ji-Su Son, Kyunghwan Oh, and Sung-Min Hwang  »View Author Affiliations


Optics Express, Vol. 19, Issue 14, pp. 12919-12924 (2011)
http://dx.doi.org/10.1364/OE.19.012919


View Full Text Article

Enhanced HTML    Acrobat PDF (1099 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

We report on orange a-plane light-emitting diodes (LEDs) with InGaN single quantum well (SQW) grown on r-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). The peak wavelength and the full-width at half maximum (FWHM) at a drive current of 20mA were 612.2 nm and 72 nm, respectively. The device demonstrated a blue shift in emission wavelength from 614.6 nm at 10 mA to 607.5 nm at 100 mA, representing a net shift of 7.1 nm over a 90 mA range, which is the longest wavelength compared with reported values in nonpolar LEDs. The polarization ratio values obtained from the orange LED varied between 0.36 and 0.44 from 10 to 100mA and a weak dependence of the polarization ratio on the injection current was observed.

© 2011 OSA

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Optical Devices

History
Original Manuscript: May 9, 2011
Revised Manuscript: June 7, 2011
Manuscript Accepted: June 10, 2011
Published: June 20, 2011

Citation
Yong Gon Seo, Kwang Hyeon Baik, Hooyoung Song, Ji-Su Son, Kyunghwan Oh, and Sung-Min Hwang, "Orange a-plane InGaN/GaN light-emitting diodes grown on r-plane sapphire substrates," Opt. Express 19, 12919-12924 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-14-12919


Sort:  Author  |  Year  |  Journal  |  Reset  

References

  1. S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, “Spontaneous emission of localized excitons in InGaN single and multiquantum well structures,” Appl. Phys. Lett. 69(27), 4188–4190 (1996). [CrossRef]
  2. F. Bernardini, V. Fiorentini, and D. Vanderbilt, “Spontaneous polarization and piezoelectric constants of III-V nitrides,” Phys. Rev. B 56(16), R10024–R10027 (1997). [CrossRef]
  3. P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000). [CrossRef] [PubMed]
  4. A. Chakraborty, B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, “Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates,” Jpn. J. Appl. Phys. 44(5), L173–L175 (2005). [CrossRef]
  5. Y. Saito, K. Okuno, S. Boyama, N. Nakada, S. Nitta, Y. Ushida, and N. Shibata, “m-plane GaInN light emitting diodes grown on patterned a-plane sapphire substrates,” Appl. Phys. Express 2, 041001 (2009). [CrossRef]
  6. T. Detchprohm, M. Zhu, Y. Li, Y. Xia, C. Wetzel, E. A. Preble, L. Liu, T. Paskova, and D. Hanser, “Green light emitting diodes on a-plane GaN bulk substrates,” Appl. Phys. Lett. 92(24), 241109 (2008). [CrossRef]
  7. S.-M. Hwang, Y. G. Seo, K. H. Baik, I.-S. Cho, J. H. Baek, S. Jung, T. G. Kim, and M. Cho, “Demonstration of nonpolar a-plane InGaN/GaN light emitting diode on r-plane sapphire substrate,” Appl. Phys. Lett. 95(7), 071101 (2009). [CrossRef]
  8. H. Masui, T. J. Baker, R. Sharma, P. M. Pattison, M. Iza, H. Zhong, S. Nakamura, and S. P. DenBaars, “First-moment analysis of polarized light emission from InGaN/GaN light-emitting diodes prepared semipolar planes,” Jpn. J. Appl. Phys. 45(34), L904–L906 (2006). [CrossRef]
  9. M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, and T. Mukai, “Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {11-22} GaN bulk substrates,” Jpn. J. Appl. Phys. 45(26), L659–L662 (2006). [CrossRef]
  10. R. B. Chung, Y. Lin, I. Koslow, N. Pfaff, H. Ohta, J. Ha, S. P. DenBaars, and S. Nakamura, “Electroluminescence characterization of (20-21) InGaN/GaN light emitting diodes with various wavelengths,” Jpn. J. Appl. Phys. 49(7), 070203 (2010). [CrossRef]
  11. N. F. Gardner, J. C. Kim, J. J. Wierer, Y. C. Shen, and M. R. Krames, “Polarization anisotropy in the electroluminescence of m-plane InGaN–GaN multiple-quantum-well light-emitting diodes,” Appl. Phys. Lett. 86(11), 111101 (2005). [CrossRef]
  12. H. Masui, A. Chakraborty, B. A. Haskell, U. K. Mishra, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Polarized light emission from nonpolar InGaN light-emitting diodes grown on a bulk m-plane GaN substrate,” Jpn. J. Appl. Phys. 44(43), L1329–L1332 (2005). [CrossRef]
  13. R. Sharma, P. M. Pattison, H. Masui, R. M. Farrell, T. J. Baker, B. A. Haskell, F. Wu, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Demonstration of a semipolar (10-1-3) InGaN/GaN green light emitting diode,” Appl. Phys. Lett. 87(23), 231110 (2005). [CrossRef]
  14. H. Masui, T. J. Baker, M. Iza, H. Zhong, S. Nakamura, and S. P. DenBaars, “Light-polarization characteristics of electroluminescence from InGaN/GaN light-emitting diodes prepared on (11-22) plane GaN,” J. Appl. Phys. 100(11), 113109 (2006). [CrossRef]
  15. S. Nakamura, M. Senoh, N. Iwasa, and S.-I. Nagahama, “High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures,” Jpn. J. Appl. Phys. 34(Part 2, No. 7A), L797–L799 (1995). [CrossRef]
  16. K. P. O'Donnell, T. Breitkopf, H. Kalt, W. Van der Stricht, I. Moerman, P. Demeester, and P. G. Middleton, “Optical linewidths of InGaN light emitting diodes and epilayers,” Appl. Phys. Lett. 70(14), 1843–1845 (1997). [CrossRef]
  17. H. Yamada, K. Iso, M. Saito, H. Masui, K. Fujito, S. P. DenBaars, and S. Nakamura, “Compositional dependence of nonpolar m-plane InxGa1-xN/GaN light emitting diodes,” Appl. Phys. Express 1, 041101 (2008). [CrossRef]
  18. H. Song, J. Suh, E. Kyu Kim, K. Hyeon Baik, and S.-M. Hwang, “Growth of high quality a-plane GaN epi-layer on r-plane sapphire substrates with optimization of multi-buffer layer,” J. Cryst. Growth 312(21), 3122–3126 (2010). [CrossRef]
  19. S. You, T. Detchprohm, M. Zhu, W. Hou, E. A. Preble, D. Hanser, T. Paskova, and C. Wetzel, “Highly polarized green light emitting diode in m-axis GaInN/GaN,” Appl. Phys. Express 3(10), 102103 (2010). [CrossRef]
  20. K. Iso, H. Yamada, H. Hirasawa, N. Fellows, M. Saito, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “High brightness blue InGaN/GaN light emitting diode on nonpolar m-plane bulk GaN substrate,” Jpn. J. Appl. Phys. 46(40), L960–L962 (2007). [CrossRef]
  21. T. Koyama, T. Onuma, H. Masui, A. Chakraborty, M. A. Haskell, S. Keller, U. K. Mishra, J. S. Speck, S. Nakamura, S. P. DenBaars, T. Sota, and S. F. Chichibu, “Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1-xN/ GaN blue light emitting diodes fabricated on freestanding GaN substrates,” Appl. Phys. Lett. 89(9), 091906 (2006). [CrossRef]
  22. H.-H. Huang and Y.-R. Wu, “Study of polarization properties of light emitted from a-plane InGaN/GaN quantum well-based light emitting diodes,” J. Appl. Phys. 106(2), 023106 (2009). [CrossRef]
  23. N. Fellows, H. Sato, H. Masui, S. P. DenBaars, and S. Nakamura, “Increased polarization ratio on semipolar (11–22) InGaN/GaN light-emitting diodes with increasing indium composition,” Jpn. J. Appl. Phys. 47(10), 7854–7856 (2008). [CrossRef]
  24. H. Masui, H. Yamada, K. Iso, S. Nakamura, and S. P. DenBaars, “Optical polarization characteristics of m-oriented InGaN/GaN light-emitting diodes with various indium compositions in single-quantum-well structure,” J. Phys. D 41(22), 225104 (2008). [CrossRef]
  25. Y. G. Seo, K. H. Baik, K.-M. Song, S. Lee, H. Yoon, J.-H. Park, K. Oh, and S.-M. Hwang, “Milliwatt-class non-polar a-plane InGaN/GaN light-emitting diodes grown directly on r-plane sapphire substrates,” Curr. Appl. Phys. 10(6), 1407–1410 (2010). [CrossRef]
  26. C. H. Chiu, S. Y. Kuo, M. H. Lo, C. C. Ke, T. C. Wang, Y. T. Lee, H. C. Kuo, T. C. Lu, and S. C. Wang, “Optical properties of a-plane InGaN/GaN multiple quantum wells on r-plane sapphire substrates with different indium compositions,” J. Appl. Phys. 105(6), 063105 (2009). [CrossRef]
  27. A. M. Fischer, Z. Wu, K. Sun, Q. Wei, Y. Huang, R. Senda, D. Iida, M. Iwaya, H. Amano, and F. A. Ponce, “Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN,” Appl. Phys. Express 2, 041002 (2009). [CrossRef]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

Figures

Fig. 1 Fig. 2 Fig. 3
 
Fig. 4
 

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited