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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 14 — Jul. 4, 2011
  • pp: 13000–13007

10 Gb/s operation of photonic crystal silicon optical modulators

Hong C. Nguyen, Yuya Sakai, Mizuki Shinkawa, Norihiro Ishikura, and Toshihiko Baba  »View Author Affiliations

Optics Express, Vol. 19, Issue 14, pp. 13000-13007 (2011)

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We report the first experimental demonstration of 10 Gb/s modulation in a photonic crystal silicon optical modulator. The device consists of a 200 μm-long SiO2-clad photonic crystal waveguide, with an embedded p-n junction, incorporated into an asymmetric Mach-Zehnder interferometer. The device is integrated on a SOI chip and fabricated by CMOS-compatible processes. With the bias voltage set at 0 V, we measure a VπL < 0.056 V∙cm. Optical modulation is demonstrated by electrically driving the device with a 231 − 1 bit non-return-to-zero pseudo-random bit sequence signal. An open eye pattern is observed at bitrates of 10 Gb/s and 2 Gb/s, with and without pre-emphasis of the drive signal, respectively.

© 2011 OSA

OCIS Codes
(130.0250) Integrated optics : Optoelectronics
(130.5296) Integrated optics : Photonic crystal waveguides

ToC Category:
Integrated Optics

Original Manuscript: April 29, 2011
Revised Manuscript: June 5, 2011
Manuscript Accepted: June 14, 2011
Published: June 21, 2011

Hong C. Nguyen, Yuya Sakai, Mizuki Shinkawa, Norihiro Ishikura, and Toshihiko Baba, "10 Gb/s operation of photonic crystal silicon optical modulators," Opt. Express 19, 13000-13007 (2011)

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