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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 14 — Jul. 4, 2011
  • pp: 13378–13385

Effect of the number of stacking layers on the characteristics of quantum-dash lasers

M. Z. M. Khan, T. K. Ng, U. Schwingenschlogl, P. Bhattacharya, and B. S. Ooi  »View Author Affiliations


Optics Express, Vol. 19, Issue 14, pp. 13378-13385 (2011)
http://dx.doi.org/10.1364/OE.19.013378


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Abstract

A theoretical model is evaluated to investigate the characteristics of InAs/InP quantum dash (Qdash) lasers as a function of the stack number. The model is based on multimode carrier-photon rate equations and accounts for both inhomogeneous and homogeneous broadenings of the optical gain. The numerical results show a non monotonic increase in the threshold current density and a red shift in the lasing wavelength on increasing the stack number, which agrees well with reported experimental results. This observation may partly be attributed to an increase of inhomogeneity in the active region.

© 2011 OSA

OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: March 1, 2011
Revised Manuscript: May 12, 2011
Manuscript Accepted: May 17, 2011
Published: June 27, 2011

Citation
M. Z. M. Khan, T. K. Ng, U. Schwingenschlogl, P. Bhattacharya, and B. S. Ooi, "Effect of the number of stacking layers on the characteristics of quantum-dash lasers," Opt. Express 19, 13378-13385 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-14-13378


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References

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