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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 14 — Jul. 4, 2011
  • pp: 13386–13394

Monolithically integrated all-optical gate switch using intersubband transition in InGaAs/AlAsSb coupled double quantum wells

Ryoichi Akimoto, Shin-ichiro Gozu, Teruo Mozume, and Hiroshi Ishikawa  »View Author Affiliations

Optics Express, Vol. 19, Issue 14, pp. 13386-13394 (2011)

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We have developed a compact all-optical gate switch with a footprint less than 1 mm2, in which an optical nonlinear waveguide using cross-phase-modulation associated with intersubband transition in InGaAs/AlGaAs/AlAsSb coupled double quantum wells and a Michelson interferometer (MI) are monolithically integrated on an InP chip. The MI configuration allows a transverse magnetic pump light direct access to an MI arm for phase modulation while passive photonic integrated circuits serve a transverse electric signal light. Full switching of the π-rad nonlinear phase shift is achieved with a pump pulse energy of 8.6 pJ at a 10-GHz repetition rate. We also demonstrate all-optical demultiplexing of a 160-Gb/s signal to a 40-Gb/s signal.

© 2011 OSA

OCIS Codes
(190.5970) Nonlinear optics : Semiconductor nonlinear optics including MQW
(130.4815) Integrated optics : Optical switching devices

ToC Category:
Integrated Optics

Original Manuscript: March 24, 2011
Revised Manuscript: May 19, 2011
Manuscript Accepted: June 1, 2011
Published: June 27, 2011

Ryoichi Akimoto, Shin-ichiro Gozu, Teruo Mozume, and Hiroshi Ishikawa, "Monolithically integrated all-optical gate switch using intersubband transition in InGaAs/AlAsSb coupled double quantum wells," Opt. Express 19, 13386-13394 (2011)

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  1. H. Ishikawa, Ultrafast All-Optical Signal Processing Devices, (Wiley, 2008) Chap. 5.
  2. H. Tsuchida, T. Simoyama, H. Ishikawa, T. Mozume, M. Nagase, and J. Kasai, “Cross-phase-modulation-based wavelength conversion using intersubband transition in InGaAs/AlAs/AlAsSb coupled quantum wells,” Opt. Lett. 32(7), 751–753 (2007). [CrossRef] [PubMed]
  3. H. Ishikawa, H. Tsuchida, K. S. Abedin, T. Simoyama, T. Mozume, M. Nagase, R. Akimoto, T. Miyazaki, and T. Hasama, “Ultrafast all-optical refractive index modulation in intersubband transition switch using InGaAs/AlAs/ AlAsSb quantum wells,” Jpn. J. Appl. Phys. 46(8), L157–L160 (2007). [CrossRef]
  4. G. W. Cong, R. Akimoto, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “Mechanism of ultrafast modulation of the refraction index in photoexcited InxGa1-xAs/AlAsySb1-y quantum well waveguides,” Phys. Rev. B 78(7), 075308 (2008). [CrossRef]
  5. G. W. Cong, R. Akimoto, K. Akita, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Experimental and theoretical study of cross phase modulation in InGaAs/AlAsSb coupled double quantum wells with AlGaAs coupling barrier,” Phys. Rev. B 80(3), 035306 (2009). [CrossRef]
  6. S. Gozu, T. Mozume, R. Akimoto, I. Akita, C. Guangwei, and H. Ishikawa, “Cross Phase Modulation Efficiency Enhancement in In0.8Ga0.2As /Al0.5Ga0.5As/ AlAs0.56Sb0.44 Coupled Double Quantum Wells by Tailoring Interband Transition Wavelength,” Appl. Phys. Express 2, 42201 (2009). [CrossRef]
  7. R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett. 91(22), 221115 (2007). [CrossRef]
  8. R. Akimoto, G. W. Cong, T. Mozume, S. Gozu, H. Tsuchida, T. Hasama, and H. Ishikawa, ““All-Optical Demultiplexing from 160 to 40/80 Gb/s Using Mach-Zehnder Switches based on Intersubband Transition of InGaAs/AlAsSb Coupled Double Quantum Wells,” IEICE ELECTRON,” E 92-C, 187–192 (2009).
  9. R. Akimoto, S. Gozu, T. Mozume, K. Akita, G. W. Cong, T. Hasama, and H. Ishikawa, “All-Optical Wavelength Conversion at 160Gb/s by Intersubband Transition Switches Utilizing Efficient XPM in InGaAs/AlAsSb Coupled Double Quantum Well,” in Proceedings of 35th European Conference on Optical Communication, (VDE VERLAG GMBH, Berlin, 2009)1.2.2.
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  11. G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Simultaneous generation of intersubband absorption and quantum well intermixing through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells,” Appl. Phys. Lett. 96(10), 101901 (2010). [CrossRef]
  12. G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical Cross-phase Modulation Generation by Ion Implantation in III-V Quantum Wells,” IEEE Photon. Technol. Lett. 22(24), 1820–1822 (2010). [CrossRef]
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