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Ten Gbit/s ring resonator silicon modulator based on interdigitated PN junctions |
Optics Express, Vol. 19, Issue 15, pp. 14690-14695 (2011)
http://dx.doi.org/10.1364/OE.19.014690
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Abstract
10 Gbit/s silicon modulator based on carrier depletion in interdigitated PN junctions is experimentally demonstrated. The phase-shifter is integrated in a ring resonator, and high extinction ratio larger than 10 dB is obtained in both TE and TM polarizations. VπLπ of about 2.5 V × cm and optical loss lower than 1 dB are estimated. 10 Gbit/s data transmission is demonstrated with an extinction ratio of 4 dB.
© 2011 OSA
OCIS Codes
(130.0250) Integrated optics : Optoelectronics
(130.4110) Integrated optics : Modulators
ToC Category:
Integrated Optics
History
Original Manuscript: May 9, 2011
Revised Manuscript: June 23, 2011
Manuscript Accepted: July 8, 2011
Published: July 15, 2011
Citation
Melissa Ziebell, Delphine Marris-Morini, Gilles Rasigade, Paul Crozat, Jean-Marc Fédéli, Philippe Grosse, Eric Cassan, and Laurent Vivien, "Ten Gbit/s ring resonator silicon modulator based on interdigitated PN junctions," Opt. Express 19, 14690-14695 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-15-14690
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References
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