The optical absorption at wavelengths near 1550 nm has been quantified as a function of annealing temperature in ion-implanted silicon-on-insulator racetrack resonators. The variation of the output characteristics of the bus waveguide versus the concentration of implantation-induced lattice disorder in the ring is used to develop a novel method for the determination of the coupling and round-trip loss of the resonator, independently. This experimental procedure has general applicability for the determination of these parameters. Significant propagation loss is found to persist following annealing at temperatures previously observed to remove the majority of ion implantation damage. It is suggested that these annealing characteristics are a consequence of an ion implantation range which is greater than the silicon waveguide layer thickness.

© 2011 OSA

1. A. Knights, A. House, R. MacNaughton, and F. Hopper, “Optical power monitoring function compatible with single chip integration on silicon-on-insulator,”in Proc. Optical Fiber Communications Conference, Atlanta, GA, 23–38 March 2003 (OFC2003), p. 705.
2. J. B. Bradley, P. E. Jessop, and A. P. Knights, “Silicon waveguide-integrated optical power monitor with enhanced sensitivity at 1550 nm,” Appl. Phys. Lett. 86(24), 241103 (2005). [CrossRef]
3. N. M. Wright, D. J. Thomson, K. L. Litvinenko, W. R. Headley, A. J. Smith, A. P. Knights, J. H. B. Deane, F. Y. Gardes, G. Z. Mashanovich, R. Gwilliam, and G. T. Reed, “Free carrier lifetime modification for silicon waveguide based devices,” Opt. Express 16(24), 19779–19784 (2008). [CrossRef] [PubMed]
4. J. K. Doylend, A. P. Knights, B. J. Luff, R. Shafiiha, M. Asghari, and R. M. Gwilliam, “Modifying functionality of variable optical attenuator to signal monitoring through defect engineering,” Electron. Lett. 46(3), 234 (2010). [CrossRef]
5. H. Y. Fan and A. K. Ramdas, “Infrared absorption and photoconductivity in irradiated silicon,” J. Appl. Phys. 30(8), 1127 (1959). [CrossRef]
6. L. J. Cheng, J. C. Corelli, J. W. Corbett, and G. D. Watkins, “1.8-, 3.3-, and 3.9μm bands in irradiated silicon:correlations with the divacancy,” Phys. Rev. 152(2), 761–774 (1966). [CrossRef]
7. H. J. Stein, F. L. Vook, and J. A. Borders, “Direct evidence of divacancy formation in silicon by ion implantation,” Appl. Phys. Lett. 14(10), 328 (1969). [CrossRef]
8. S. Libertino, J. L. Benton, D. C. Jacobson, D. J. Eaglesham, J. M. Poate, S. Coffa, P. Kringho̸j, P. G. Fuochi, and M. Lavalle, “Evolution of interstitial- and vacancy-type defects upon thermal annealing in ion-implanted Si,” Appl. Phys. Lett. 71(3), 389 (1997). [CrossRef]
9. P. J. Foster, J. K. Doylend, P. Mascher, A. P. Knights, and P. G. Coleman, “Optical attenuation in defect engineered silicon rib waveguides,” J. Appl. Phys. 99(7), 073101 (2006). [CrossRef]
10. J. K. Doylend, P. E. Jessop, and A. P. Knights, “Silicon photonic resonator-enhanced defect-mediated photodiode for sub-bandgap detection,” Opt. Express 18(14), 14671–14678 (2010). [CrossRef] [PubMed]
11. http://www.epixfab.eu
12. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, (1985).
13. A. Yariv, “Critical coupling and its control in optical waveguide-ring resonator systems,” IEEE Photon. Technol. Lett. 14(4), 483–485 (2002). [CrossRef]
14. P. G. Coleman, C. P. Burrows, and A. P. Knights, “Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon,” Appl. Phys. Lett. 80(6), 947 (2002). [CrossRef]
15. A. J. Smith, R. M. Gwilliam, V. Stolojan, A. P. Knights, P. G. Coleman, A. Kallis, and S. H. Yeong, “Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates,” J. Appl. Phys. 106(10), 103514 (2009). [CrossRef]

Appl. Phys. Lett.

• J. B. Bradley, P. E. Jessop, and A. P. Knights, “Silicon waveguide-integrated optical power monitor with enhanced sensitivity at 1550 nm,” Appl. Phys. Lett. 86(24), 241103 (2005). [CrossRef]
• H. J. Stein, F. L. Vook, and J. A. Borders, “Direct evidence of divacancy formation in silicon by ion implantation,” Appl. Phys. Lett. 14(10), 328 (1969). [CrossRef]
• S. Libertino, J. L. Benton, D. C. Jacobson, D. J. Eaglesham, J. M. Poate, S. Coffa, P. Kringho̸j, P. G. Fuochi, and M. Lavalle, “Evolution of interstitial- and vacancy-type defects upon thermal annealing in ion-implanted Si,” Appl. Phys. Lett. 71(3), 389 (1997). [CrossRef]
• P. G. Coleman, C. P. Burrows, and A. P. Knights, “Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon,” Appl. Phys. Lett. 80(6), 947 (2002). [CrossRef]

Electron. Lett.

• J. K. Doylend, A. P. Knights, B. J. Luff, R. Shafiiha, M. Asghari, and R. M. Gwilliam, “Modifying functionality of variable optical attenuator to signal monitoring through defect engineering,” Electron. Lett. 46(3), 234 (2010). [CrossRef]

IEEE Photon. Technol. Lett.

• A. Yariv, “Critical coupling and its control in optical waveguide-ring resonator systems,” IEEE Photon. Technol. Lett. 14(4), 483–485 (2002). [CrossRef]

J. Appl. Phys.

• A. J. Smith, R. M. Gwilliam, V. Stolojan, A. P. Knights, P. G. Coleman, A. Kallis, and S. H. Yeong, “Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates,” J. Appl. Phys. 106(10), 103514 (2009). [CrossRef]
• H. Y. Fan and A. K. Ramdas, “Infrared absorption and photoconductivity in irradiated silicon,” J. Appl. Phys. 30(8), 1127 (1959). [CrossRef]
• P. J. Foster, J. K. Doylend, P. Mascher, A. P. Knights, and P. G. Coleman, “Optical attenuation in defect engineered silicon rib waveguides,” J. Appl. Phys. 99(7), 073101 (2006). [CrossRef]

Opt. Express

• J. K. Doylend, P. E. Jessop, and A. P. Knights, “Silicon photonic resonator-enhanced defect-mediated photodiode for sub-bandgap detection,” Opt. Express 18(14), 14671–14678 (2010). [CrossRef] [PubMed]
• N. M. Wright, D. J. Thomson, K. L. Litvinenko, W. R. Headley, A. J. Smith, A. P. Knights, J. H. B. Deane, F. Y. Gardes, G. Z. Mashanovich, R. Gwilliam, and G. T. Reed, “Free carrier lifetime modification for silicon waveguide based devices,” Opt. Express 16(24), 19779–19784 (2008). [CrossRef] [PubMed]

Phys. Rev.

• L. J. Cheng, J. C. Corelli, J. W. Corbett, and G. D. Watkins, “1.8-, 3.3-, and 3.9μm bands in irradiated silicon:correlations with the divacancy,” Phys. Rev. 152(2), 761–774 (1966). [CrossRef]

Other

• http://www.epixfab.eu
• J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, (1985).
• A. Knights, A. House, R. MacNaughton, and F. Hopper, “Optical power monitoring function compatible with single chip integration on silicon-on-insulator,”in Proc. Optical Fiber Communications Conference, Atlanta, GA, 23–38 March 2003 (OFC2003), p. 705.

Click here to see a list of articles that cite this paper

Related Journal Articles

• Two physical mechanisms for boosting the quality factor to cavity volume ratio of photonic crystal microcavities (OE)
• Distributed and localized feedback in microresonator sequences for linear and nonlinear optics (JOSAB)
• General recipe for designing photonic crystal cavities (OE)
• Optical trapping near a photonic crystal (OE)
• Multiple-channel silicon micro-resonator based filters for WDM applications (OE)

Related Conference Papers

• Multi-wavelength microring-based optical pulse train generator
• Multi-wavelength microring-based optical pulse train generator
• Multi-wavelength microring-based optical pulse train generator
• Enhanced Q with Internally Coupled Microring Resonators
• Enhanced Q with Internally Coupled Microring Resonators