Self-quenching InGaAs/InP single photon avalanche detector utilizing zinc diffusion rings

doi:10.1364/OE.19.015149

Self-quenching InGaAs/InP single photon avalanche detector utilizing zinc diffusion rings

James Cheng, Sifang You, Samia Rahman, and Yu-Hwa Lo »View Author Affiliations

Optics Express, Vol. 19, Issue 16, pp. 15149-15154 (2011)
http://dx.doi.org/10.1364/OE.19.015149

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Abstract
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Abstract

InGaAs single photon avalanche detectors have previously been fabricated with a negative-feedback mechanism, which allows for free-running Geiger-mode operation and improves the signal noise. To reduce the dark count and improve the detection efficiency, zinc diffusion is necessary to define the p-i-n junction and separate the high-field region from any mesa surface. Here, we demonstrate the benefits of a simple Zn-diffused geometry, yielding 1550nm single-photon detection efficiencies of 20% with a dark count rate of 8 kHz at 140 K for a 22μm diameter device.

OCIS Codes
(040.3060) Detectors : Infrared
(250.1345) Optoelectronics : Avalanche photodiodes (APDs)
(250.0040) Optoelectronics : Detectors

ToC Category:
Detectors

History
Original Manuscript: May 19, 2011
Manuscript Accepted: June 27, 2011
Published: July 21, 2011

Citation
James Cheng, Sifang You, Samia Rahman, and Yu-Hwa Lo, "Self-quenching InGaAs/InP single photon avalanche detector utilizing zinc diffusion rings," Opt. Express 19, 15149-15154 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-16-15149

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References

G. Ribordy, N. Gisin, O. Guinnard, D. Stucki, M. Wegmuller, and H. Zbinden, “Photon counting at telecom wavelengths with commercial InGaAs/InP avalanche photodiodes,” J. Mod. Opt. 51, 1381 (2004).
A. Trifonov, D. Subacius, A. Berzanskis, and A. Zavriyev, “Single photon counting at telecom wavelength and quantum key distribution,” J. Mod. Opt. 51, 1399 (2004).
K. Zhao, A. Zhang, Y.-H. Lo, and W. Farr, “InGaAs single photon avalanche detector with ultralow excess noise,” Appl. Phys. Lett. 91(8), 081107 (2007). [CrossRef]
K. Zhao, S. You, J. Cheng, and Y.-H. Lo, “Self-quenching and self-recovering InGaAs/InAlAs single photon avalanche detector,” Appl. Phys. Lett. 93(15), 153504 (2008). [CrossRef]
J. Cheng, S. You, K. Zhao, and Y.-H. Lo, “Self-quenched InGaAs single-photon detector,” Proc. SPIE 7320(732010), 732010, 732010-9 (2009). [CrossRef]
H. Sudo and M. Suzuki, “Surface degradation mechanism of InP/InGaAs APDs,” J. Lightwave Technol. 6(10), 1496–1501 (1988). [CrossRef]
Y. Liu, S. R. Forrest, J. Hladky, M. J. Lange, G. H. Olsen, and D. E. Ackley, “A planar InP/InGaAs avalanche photodiode with floating guard ring and double diffused junction,” J. Lightwave Technol. 10(2), 182–193 (1992). [CrossRef]
G. Hasnain, W. G. Bi, S. Song, J. T. Anderson, N. Moll, C.-Y. Su, J. N. Hollenhorst, N. D. Baynes, I. Athroll, S. Amos, and R. M. Ash, “Buried-mesa avalanche photodiodes,” IEEE J. Quantum Electron. 34(12), 2321–2326 (1998). [CrossRef]
M. D. Kim, J. M. Baek, T. G. Kim, S. G. Kim, and K. S. Chung, “Characterization of double floating guard ring type InP-InGaAs avalanche photodiodes with Au/Zn low resistance ohmic contacts,” Thin Solid Films 514(1–2), 250–253 (2006). [CrossRef]
S. R. Cho, S. K. Yang, J. S. Ma, S. D. Lee, J. S. Yu, A. G. Choo, T. I. Kim, and J. Burm, “Suppression of avalanche multiplication at the periphery of diffused junction by floating guard rings in a planar InGaAs-InP avalanche photodiode,” IEEE Photon. Technol. Lett. 12(5), 534–536 (2000). [CrossRef]

Ackley, D. E.
Amos, S.
Anderson, J. T.
Ash, R. M.
Athroll, I.
Baek, J. M.
Baynes, N. D.
Berzanskis, A.
Bi, W. G.
Burm, J.
Cheng, J.
Cho, S. R.
Choo, A. G.
Chung, K. S.
Farr, W.
Forrest, S. R.
Gisin, N.
Guinnard, O.
Hasnain, G.
Hladky, J.
Hollenhorst, J. N.
Kim, M. D.
Kim, S. G.
Kim, T. G.
Kim, T. I.
Lange, M. J.
Lee, S. D.
Liu, Y.
Lo, Y.-H.
Ma, J. S.
Moll, N.
Olsen, G. H.
Ribordy, G.
Song, S.
Stucki, D.
Su, C.-Y.
Subacius, D.
Sudo, H.
Suzuki, M.
Trifonov, A.
Wegmuller, M.
Yang, S. K.
You, S.
Yu, J. S.
Zavriyev, A.
Zbinden, H.
Zhang, A.
Zhao, K.

Appl. Phys. Lett.

K. Zhao, A. Zhang, Y.-H. Lo, and W. Farr, “InGaAs single photon avalanche detector with ultralow excess noise,” Appl. Phys. Lett. 91(8), 081107 (2007). [CrossRef]
K. Zhao, S. You, J. Cheng, and Y.-H. Lo, “Self-quenching and self-recovering InGaAs/InAlAs single photon avalanche detector,” Appl. Phys. Lett. 93(15), 153504 (2008). [CrossRef]

IEEE J. Quantum Electron.

G. Hasnain, W. G. Bi, S. Song, J. T. Anderson, N. Moll, C.-Y. Su, J. N. Hollenhorst, N. D. Baynes, I. Athroll, S. Amos, and R. M. Ash, “Buried-mesa avalanche photodiodes,” IEEE J. Quantum Electron. 34(12), 2321–2326 (1998). [CrossRef]

IEEE Photon. Technol. Lett.

S. R. Cho, S. K. Yang, J. S. Ma, S. D. Lee, J. S. Yu, A. G. Choo, T. I. Kim, and J. Burm, “Suppression of avalanche multiplication at the periphery of diffused junction by floating guard rings in a planar InGaAs-InP avalanche photodiode,” IEEE Photon. Technol. Lett. 12(5), 534–536 (2000). [CrossRef]

J. Lightwave Technol.

H. Sudo and M. Suzuki, “Surface degradation mechanism of InP/InGaAs APDs,” J. Lightwave Technol. 6(10), 1496–1501 (1988). [CrossRef]
Y. Liu, S. R. Forrest, J. Hladky, M. J. Lange, G. H. Olsen, and D. E. Ackley, “A planar InP/InGaAs avalanche photodiode with floating guard ring and double diffused junction,” J. Lightwave Technol. 10(2), 182–193 (1992). [CrossRef]

J. Mod. Opt.

G. Ribordy, N. Gisin, O. Guinnard, D. Stucki, M. Wegmuller, and H. Zbinden, “Photon counting at telecom wavelengths with commercial InGaAs/InP avalanche photodiodes,” J. Mod. Opt. 51, 1381 (2004).
A. Trifonov, D. Subacius, A. Berzanskis, and A. Zavriyev, “Single photon counting at telecom wavelength and quantum key distribution,” J. Mod. Opt. 51, 1399 (2004).

Proc. SPIE

J. Cheng, S. You, K. Zhao, and Y.-H. Lo, “Self-quenched InGaAs single-photon detector,” Proc. SPIE 7320(732010), 732010, 732010-9 (2009). [CrossRef]

Thin Solid Films

M. D. Kim, J. M. Baek, T. G. Kim, S. G. Kim, and K. S. Chung, “Characterization of double floating guard ring type InP-InGaAs avalanche photodiodes with Au/Zn low resistance ohmic contacts,” Thin Solid Films 514(1–2), 250–253 (2006). [CrossRef]

2009, Cheng, Proc. SPIE
2008, Zhao, Appl. Phys. Lett.
2007, Zhao, Appl. Phys. Lett.
2006, Kim, Thin Solid Films
2004, Ribordy, J. Mod. Opt.
2004, Trifonov, J. Mod. Opt.
2000, Cho, IEEE Photon. Technol. Lett.
1998, Hasnain, IEEE J. Quantum Electron.
1992, Liu, J. Lightwave Technol.
1988, Sudo, J. Lightwave Technol.

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