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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 17 — Aug. 15, 2011
  • pp: 15792–15802

Antireflective silicon surface with vertical-aligned silicon nanowires realized by simple wet chemical etching processes

Yung-Jr Hung, San-Liang Lee, Kai-Chung Wu, Yian Tai, and Yen-Ting Pan  »View Author Affiliations


Optics Express, Vol. 19, Issue 17, pp. 15792-15802 (2011)
http://dx.doi.org/10.1364/OE.19.015792


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Abstract

Silicon antireflection is realized with vertical-aligned SiNWs by using improved metal-induced etching technique. The spectral responses of the transmission, reflection, and absorption characteristics for the SiNWs of different lengths are investigated. In order to realize short SiNWs to provide sufficiently low reflection, a post chemical etching process is developed to make the nanowires have a larger length fluctuation and/or tapered structure. The use of short SiNWs can allow a faster process time and avoid the sub-bandgap absorption that frequently occurs in long nanowires. Short SiNWs can also provide more compatible material structure and fabrication procedures than long ones can for applying to make optoelectronic devices. Taking the applications to solar cells as examples, the SiNWs fabricated by the proposed technique can provide 92% of solar weighted absorption with about 720 nm long wires because of the resultant effective graded index and enhanced multiple optical scattering from the random SiNW lengths and tapered wires after KOH etching.

© 2011 OSA

OCIS Codes
(310.1210) Thin films : Antireflection coatings
(220.4241) Optical design and fabrication : Nanostructure fabrication
(310.6628) Thin films : Subwavelength structures, nanostructures

ToC Category:
Thin Films

History
Original Manuscript: May 16, 2011
Revised Manuscript: July 13, 2011
Manuscript Accepted: July 14, 2011
Published: August 3, 2011

Citation
Yung-Jr Hung, San-Liang Lee, Kai-Chung Wu, Yian Tai, and Yen-Ting Pan, "Antireflective silicon surface with vertical-aligned silicon nanowires realized by simple wet chemical etching processes," Opt. Express 19, 15792-15802 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-17-15792


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