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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 18 — Aug. 29, 2011
  • pp: 16851–16865

Measurement of carrier envelope offset frequency for a 10 GHz etalon-stabilized semiconductor optical frequency comb

M. Akbulut, J. Davila-Rodriguez, I. Ozdur, F. Quinlan, S. Ozharar, N. Hoghooghi, and P.J. Delfyett  »View Author Affiliations


Optics Express, Vol. 19, Issue 18, pp. 16851-16865 (2011)
http://dx.doi.org/10.1364/OE.19.016851


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Abstract

We report Carrier Envelope Offset (CEO) frequency measurements of a 10 GHz harmonically mode-locked, Fabry-Perot etalon-stabilized, semiconductor optical frequency comb source. A modified multi-heterodyne mixing technique with a reference frequency comb was utilized for the measurement. Also, preliminary results from an attempt at f-2f self-referencing measurement are presented. The CEO frequency was found to be ~1.47 GHz for the particular etalon that was used.

© 2011 OSA

OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(140.7090) Lasers and laser optics : Ultrafast lasers
(140.3425) Lasers and laser optics : Laser stabilization

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: June 7, 2011
Revised Manuscript: July 24, 2011
Manuscript Accepted: July 26, 2011
Published: August 15, 2011

Citation
M. Akbulut, J. Davila-Rodriguez, I. Ozdur, F. Quinlan, S. Ozharar, N. Hoghooghi, and P.J. Delfyett, "Measurement of carrier envelope offset frequency for a 10 GHz etalon-stabilized semiconductor optical frequency comb," Opt. Express 19, 16851-16865 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-18-16851


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References

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