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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 18 — Aug. 29, 2011
  • pp: 17114–17120

Theory of the ultrafast mode-locked GaN lasers in a large-signal regime

Igor V. Smetanin, Peter P. Vasil’ev, and Dmitri L. Boiko  »View Author Affiliations

Optics Express, Vol. 19, Issue 18, pp. 17114-17120 (2011)

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Analytical theory of the high-power passively mode-locked laser with a slow absorber is developed. In distinguishing from previous treatment, our model is valid at pulse energies well exceeding the saturation energy of absorber. This is achieved by solving the mode-locking master equation in the pulse energy-domain representation. The performances of monolithic sub-picosecond blue-violet GaN mode-locked diode laser in the high-power operation regime are analyzed using the developed approach.

© 2011 OSA

OCIS Codes
(140.2020) Lasers and laser optics : Diode lasers
(140.4050) Lasers and laser optics : Mode-locked lasers
(140.5960) Lasers and laser optics : Semiconductor lasers
(320.7090) Ultrafast optics : Ultrafast lasers
(250.5960) Optoelectronics : Semiconductor lasers

ToC Category:
Lasers and Laser Optics

Original Manuscript: April 18, 2011
Revised Manuscript: June 20, 2011
Manuscript Accepted: June 22, 2011
Published: August 17, 2011

Igor V. Smetanin, Peter P. Vasil’ev, and Dmitri L. Boiko, "Theory of the ultrafast mode-locked GaN lasers in a large-signal regime," Opt. Express 19, 17114-17120 (2011)

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