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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 18 — Aug. 29, 2011
  • pp: 17212–17219

Pockels effect based fully integrated, strained silicon electro-optic modulator

Bartos Chmielak, Michael Waldow, Christopher Matheisen, Christian Ripperda, Jens Bolten, Thorsten Wahlbrink, Michael Nagel, Florian Merget, and Heinrich Kurz  »View Author Affiliations


Optics Express, Vol. 19, Issue 18, pp. 17212-17219 (2011)
http://dx.doi.org/10.1364/OE.19.017212


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Abstract

We demonstrate for the first time a fully integrated electro-optic modulator based on locally strained silicon rib-waveguides. By depositing a Si3N4 strain layer directly on top of the silicon waveguide the silicon crystal is asymmetrically distorted. Thus its inversion symmetry is broken and a linear electro-optic effect is induced. Electro-optic characterization yields a record high value χ(2) yyz = 122 pm/V for the second-order susceptibility of the strained silicon waveguide and a strict linear dependence between the applied modulation voltage Vmod and the resulting effective index change Δneff . Spatially resolved micro-Raman and terahertz (THz) difference frequency generation (DFG) experiments provide in-depth insight into the origin of the electro-optic effect by correlating the local strain distribution with the observed second-order optical activity.

© 2011 OSA

OCIS Codes
(130.0130) Integrated optics : Integrated optics
(160.2100) Materials : Electro-optical materials
(170.5660) Medical optics and biotechnology : Raman spectroscopy
(190.0190) Nonlinear optics : Nonlinear optics
(250.7360) Optoelectronics : Waveguide modulators
(190.4223) Nonlinear optics : Nonlinear wave mixing

ToC Category:
Integrated Optics

History
Original Manuscript: July 15, 2011
Revised Manuscript: August 2, 2011
Manuscript Accepted: August 2, 2011
Published: August 17, 2011

Citation
Bartos Chmielak, Michael Waldow, Christopher Matheisen, Christian Ripperda, Jens Bolten, Thorsten Wahlbrink, Michael Nagel, Florian Merget, and Heinrich Kurz, "Pockels effect based fully integrated, strained silicon electro-optic modulator," Opt. Express 19, 17212-17219 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-18-17212


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