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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 19 — Sep. 12, 2011
  • pp: 17960–17965

Lasing at exciton transition in optically pumped gallium nitride nanopillars

Ming-Hua Lo, Yuh-Jen Cheng, Mei-Chun Liu, Hao-Chung Kuo, and Shing Chung Wang  »View Author Affiliations

Optics Express, Vol. 19, Issue 19, pp. 17960-17965 (2011)

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We report the observation of room temperature lasing action in optically pumped GaN nanopillars. The nanopillars were fabricated by patterned etching and crystalline regrowth from a GaN substrate. When nanopillars were optically excited, a narrow emission peak emerged from the broad spontaneous emission background. The increasing rate is nine times faster than that of the spontaneous emission background, showing the onset of lasing action. The lasing occurs right at the center of spontaneous emission rather than the often reported redshifted wavelength. A spectroscopic ellipsometry analysis indicates that the gain of lasing action is provided by exciton transition.

© 2011 OSA

OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(140.7240) Lasers and laser optics : UV, EUV, and X-ray lasers
(160.0160) Materials : Materials
(160.3380) Materials : Laser materials
(160.6000) Materials : Semiconductor materials

ToC Category:
Lasers and Laser Optics

Original Manuscript: June 23, 2011
Revised Manuscript: August 8, 2011
Manuscript Accepted: August 10, 2011
Published: August 29, 2011

Ming-Hua Lo, Yuh-Jen Cheng, Mei-Chun Liu, Hao-Chung Kuo, and Shing Chung Wang, "Lasing at exciton transition in optically pumped gallium nitride nanopillars," Opt. Express 19, 17960-17965 (2011)

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