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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 19 — Sep. 12, 2011
  • pp: 18029–18035

Fabrication of low loss and high speed silicon optical modulator using doping compensation method

Xiaoguang Tu, Tsung-Yang Liow, Junfeng Song, Mingbin Yu, and Guo Qiang Lo  »View Author Affiliations

Optics Express, Vol. 19, Issue 19, pp. 18029-18035 (2011)

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Compared with an optical modulator based on lithium niobate, the total loss of the current high speed silicon modulator is still too high for commercial use. Reduction of the total loss always comes along with the degradation of the other two characteristics including modulation efficiency or switching speed. In this paper, we reduce the phase shifter loss through optimizing the doping level out of the depletion region while keeping the modulation efficiency and switching speed at a high level. Compensated doping method is utilized to optimize the doping level on the cross section of the phase shift. With doping compensation, the Loss·Efficiency figure-of-merit (FOM) of 4 mm phase shifter is reduced from 25.8 dB·V to 19.4 dB·V while still keeping the small signal 3 dB-bandwidth at about 10 GHz. After doping profile optimizing, the measured bandwidth of the phase shifter with doping compensation can even reaches 17 GHz with a Loss·Efficiency FOM of about 25.4 dB·V.

© 2011 OSA

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(230.3990) Optical devices : Micro-optical devices
(230.7370) Optical devices : Waveguides
(250.7360) Optoelectronics : Waveguide modulators

ToC Category:
Integrated Optics

Original Manuscript: June 7, 2011
Revised Manuscript: August 4, 2011
Manuscript Accepted: August 16, 2011
Published: August 30, 2011

Xiaoguang Tu, Tsung-Yang Liow, Junfeng Song, Mingbin Yu, and Guo Qiang Lo, "Fabrication of low loss and high speed silicon optical modulator using doping compensation method," Opt. Express 19, 18029-18035 (2011)

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