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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 19 — Sep. 12, 2011
  • pp: 18122–18134

Low-energy MOS depletion modulators in silicon-on-insulator micro-donut resonators coupled to bus waveguides

Richard Soref, Junpeng Guo, and Greg Sun  »View Author Affiliations

Optics Express, Vol. 19, Issue 19, pp. 18122-18134 (2011)

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Electrical, optical and electro-optical simulations are presented for a waveguided, resonant, bus-coupled, p-doped Si micro-donut MOS depletion modulator operating at the 1.55 μm wavelength. To minimize the switching voltage and energy, a high-K dielectric film of HfO2 or ZrO2 is chosen as the gate dielectric, while a narrow ring-shaped layer of p-doped poly-silicon is selected for the gate electrode, rather than metal, to minimize plasmonic loss loading of the fundamental TE mode. In a 6-μm-diam high-Q resonator, an infrared intensity extinction ratio of 6 dB is predicted for a modulation voltage of 2 V and a switching energy of 4 fJ/bit. A speed-of-response around 1 ps is anticipated. For a modulator scaled to operate at 1.3 μm, the estimated switching energy is 2.5 fJ/bit.

© 2011 OSA

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(130.4110) Integrated optics : Modulators

ToC Category:
Integrated Optics

Original Manuscript: July 6, 2011
Manuscript Accepted: August 24, 2011
Published: August 31, 2011

Richard Soref, Junpeng Guo, and Greg Sun, "Low-energy MOS depletion modulators in silicon-on-insulator micro-donut resonators coupled to bus waveguides," Opt. Express 19, 18122-18134 (2011)

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  1. S. P. Anderson and P. M. Fauchet, “Ultra-low power modulators using MOS depletion in a high-Q SiO₂-clad silicon 2-D photonic crystal resonator,” Opt. Express 18(18), 19129–19140 (2010). [CrossRef] [PubMed]
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