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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 19 — Sep. 12, 2011
  • pp: 18319–18323

Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes

Taiping Lu, Shuti Li, Kang Zhang, Chao Liu, Yian Yin, Lejuan Wu, Hailong Wang, Xiaodong Yang, Guowei Xiao, and Yugang Zhou  »View Author Affiliations


Optics Express, Vol. 19, Issue 19, pp. 18319-18323 (2011)
http://dx.doi.org/10.1364/OE.19.018319


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Abstract

InGaN based light-emitting diodes (LEDs) with undoped GaN interlayer of variant thicknesses grown by metal-organic chemical vapor deposition technique have been investigated. It was found that the thickness of undoped GaN interlayers affected LEDs’ performance greatly. The LED with 50 nm undoped GaN interlayer showed higher light output power and lower reverse-leakage current compared with the others at 20 mA. Based on electrical and optical characteristics analysis and numerical simulation, these improvements are mainly attributed to the improvement of the quality of depletion region by inserting an undoped GaN layer, as well as reduction of the Shockley–Read–Hall recombination in InGaN/GaN MQWs.

© 2011 OSA

OCIS Codes
(230.0250) Optical devices : Optoelectronics
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Optical Devices

History
Original Manuscript: April 20, 2011
Revised Manuscript: June 28, 2011
Manuscript Accepted: July 3, 2011
Published: September 6, 2011

Citation
Taiping Lu, Shuti Li, Kang Zhang, Chao Liu, Yian Yin, Lejuan Wu, Hailong Wang, Xiaodong Yang, Guowei Xiao, and Yugang Zhou, "Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes," Opt. Express 19, 18319-18323 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-19-18319


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