OSA's Digital Library

Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 19 — Sep. 12, 2011
  • pp: 18319–18323

Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes

Taiping Lu, Shuti Li, Kang Zhang, Chao Liu, Yian Yin, Lejuan Wu, Hailong Wang, Xiaodong Yang, Guowei Xiao, and Yugang Zhou  »View Author Affiliations

Optics Express, Vol. 19, Issue 19, pp. 18319-18323 (2011)

View Full Text Article

Enhanced HTML    Acrobat PDF (974 KB)

Browse Journals / Lookup Meetings

Browse by Journal and Year


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools



InGaN based light-emitting diodes (LEDs) with undoped GaN interlayer of variant thicknesses grown by metal-organic chemical vapor deposition technique have been investigated. It was found that the thickness of undoped GaN interlayers affected LEDs’ performance greatly. The LED with 50 nm undoped GaN interlayer showed higher light output power and lower reverse-leakage current compared with the others at 20 mA. Based on electrical and optical characteristics analysis and numerical simulation, these improvements are mainly attributed to the improvement of the quality of depletion region by inserting an undoped GaN layer, as well as reduction of the Shockley–Read–Hall recombination in InGaN/GaN MQWs.

© 2011 OSA

OCIS Codes
(230.0250) Optical devices : Optoelectronics
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Optical Devices

Original Manuscript: April 20, 2011
Revised Manuscript: June 28, 2011
Manuscript Accepted: July 3, 2011
Published: September 6, 2011

Taiping Lu, Shuti Li, Kang Zhang, Chao Liu, Yian Yin, Lejuan Wu, Hailong Wang, Xiaodong Yang, Guowei Xiao, and Yugang Zhou, "Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes," Opt. Express 19, 18319-18323 (2011)

Sort:  Author  |  Year  |  Journal  |  Reset  


  1. A. David, M. J. Grundmann, J. F. Kaeding, N. F. Gardner, T. G. Mihopoulos, and M. R. Krames, “Carrier distribution in (0001) InGaN/GaN multiple quantum well light-emitting diodes,” Appl. Phys. Lett.92(5), 053502 (2008). [CrossRef]
  2. J. Zhang, L. E. Cai, B. P. Zhang, X. L. Hu, F. Jiang, J. Z. Yu, and Q. M. Wang, “Efficient hole transport in asymmetric coupled InGaN multiple quantum wells,” Appl. Phys. Lett.95(16), 161110 (2009). [CrossRef]
  3. I. A. Pope, P. M. Smowton, P. Blood, J. D. Thomson, M. J. Kappers, and C. J. Humphreys, “Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm,” Appl. Phys. Lett.82(17), 2755–2757 (2003). [CrossRef]
  4. S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, “Spontaneous emission of localized excitons in InGaN single and multiquantum well structures,” Appl. Phys. Lett.69(27), 4188–4190 (1996). [CrossRef]
  5. Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, “Auger recombination in InGaN measured by photoluminescence,” Appl. Phys. Lett.91(14), 141101 (2007). [CrossRef]
  6. M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based lig ht-emitting diodes,” Appl. Phys. Lett.91(18), 183507 (2007). [CrossRef]
  7. Y. L. Li, Y. R. Huang, and Y. H. Lai, “Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness,” Appl. Phys. Lett.91(18), 181113 (2007). [CrossRef]
  8. M. Leroux, N. Grandjean, J. Massies, B. Gil, P. Lefebvre, and P. Bigenwald, “Barrier-width dependence of group-III nitrides quantum-well transition energies,” Phys. Rev. B60(3), 1496–1499 (1999). [CrossRef]
  9. D. V. Kuksenkov, H. Temkin, A. Osinsky, R. Gaska, and M. A. Khan, “Origin of conductivity and low-frequency noise in reverse-biased GaN p-n junction,” Appl. Phys. Lett.72(11), 1365–1367 (1998). [CrossRef]
  10. X. A. Cao, E. B. Stokes, P. Sandvik, S. F. LeBoeuf, J. Kretchmer, and D. Walker, “Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses,” IEEE Electron Device Lett.43, 1987–1991 (2002).
  11. S. H. Yen, M. C. Tsai, M. L. Tsai, Y. J. Shen, T. C. Hsu, and Y. K. Kuo, “Theoretical investigation of Auger recombination on internal quantum efficiency of blue light-emitting diodes,” Appl. Phys., A Mater. Sci. Process.97(3), 705–708 (2009). [CrossRef]
  12. W. Shockley, “The theory of pn junctions in semiconductors and pn junction transistors,” Bell Syst. Tech. J.28, 435–489 (1949).
  13. C. T. Sah, R. N. Noyce, and W. Shockley, “Carrier generation and recombination in P-NV junctions and P-N junction characteristics,” Proc. IRE. 45, 1228–1243 (1957).
  14. S. C. Choo, “Carrier generation-recombination in the space-charge region of an asymmetrical pn junction,” Solid-State Electron.11(11), 1069–1077 (1968). [CrossRef]
  15. G. R. Nash and T. Ashley, “Reduction in Shockley–Read–Hall generation-recombination in AlInSb light-emitting-diodes using spatial patterning of the depletion region,” Appl. Phys. Lett.94(23), 23510 (2009). [CrossRef]
  16. APSYS by Crosslight Software Inc, Burnaby, Canada ( http://www.crosslight.com ).

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.


Fig. 1 Fig. 2 Fig. 3
Fig. 4

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited