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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 2 — Jan. 17, 2011
  • pp: 1065–1071

Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands

Tongbo Wei, Qingfeng Kong, Junxi Wang, Jing Li, Yiping Zeng, Guohong Wang, Jinmin Li, Yuanxun Liao, and Futing Yi  »View Author Affiliations

Optics Express, Vol. 19, Issue 2, pp. 1065-1071 (2011)

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InGaN-based light emitting diodes (LEDs) with a top nano-roughened p-GaN surface are fabricated using self-assembled CsCl nano-islands as etch masks. Following formation of hemispherical GaN nano-island arrays, electroluminescence (EL) spectra of roughened LEDs display an obvious redshift due to partial compression release in quantum wells through Inductively Coupled Plasma (ICP) etching. At a 350-mA current, the enhancement of light output power of LEDs subjected to ICP treatment with durations of 50, 150 and 250 sec compared with conventional LED have been determined to be 9.2, 70.6, and 42.3%, respectively. Additionally, the extraction enhancement factor can be further improved by increasing the size of CsCl nano-island. The economic and rapid method puts forward great potential for high performance lighting devices.

© 2011 OSA

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Optical Devices

Original Manuscript: October 21, 2010
Revised Manuscript: December 27, 2010
Manuscript Accepted: January 7, 2011
Published: January 10, 2011

Tongbo Wei, Qingfeng Kong, Junxi Wang, Jing Li, Yiping Zeng, Guohong Wang, Jinmin Li, Yuanxun Liao, and Futing Yi, "Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands," Opt. Express 19, 1065-1071 (2011)

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