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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 2 — Jan. 17, 2011
  • pp: 1665–1679

Scintillation induced response in passively-quenched Si-based single photon counting avalanche diode arrays

Virginia Ch. Spanoudaki and Craig S. Levin  »View Author Affiliations

Optics Express, Vol. 19, Issue 2, pp. 1665-1679 (2011)

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An optical electrical model which studies the response of Si-based single photon counting arrays, specifically silicon photomultipliers (SiPMs), to scintillation light has been developed and validated with analytically derived and experimental data. The scintillator-photodetector response in terms of relative pulse height, 10%–90% rise/decay times to light stimuli of different rise times (ranging from 0.1 to 5 ns) and decay times (ranging from 1 to 50 ns), as well as for different decay times of the photodetector are compared in theory and simulation. A measured detector response is used as a reference to further validate the model and the results show a mean deviation of simulated over measured values of 1%.

© 2011 Optical Society of America

OCIS Codes
(040.1240) Detectors : Arrays
(040.5160) Detectors : Photodetectors
(130.5990) Integrated optics : Semiconductors
(290.5930) Scattering : Scintillation
(040.1345) Detectors : Avalanche photodiodes (APDs)

ToC Category:

Original Manuscript: December 14, 2010
Manuscript Accepted: January 7, 2011
Published: January 13, 2011

Virginia C. Spanoudaki and Craig S. Levin, "Scintillation induced response in passively-quenched Si-based single photon counting avalanche diode arrays," Opt. Express 19, 1665-1679 (2011)

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