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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 2 — Jan. 17, 2011
  • pp: 527–539

Optical anisotropy and light extraction efficiency of MBE grown GaN nanowires epilayers

Anne-Line Henneghien, Gabriel Tourbot, Bruno Daudin, Olivier Lartigue, Yohan Désières, and Jean-Michel Gérard  »View Author Affiliations

Optics Express, Vol. 19, Issue 2, pp. 527-539 (2011)

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The use of nanowires as active medium seems very promising for the development of high brightness LEDs. With a lower effective refractive index than bulk, semiconductor nanowire layers may lead to a high light extraction efficiency. We hereafter discuss the anisotropic properties of dense arrays of molecular beam epitaxy (MBE) grown gallium nitride (GaN) nanowires and the consequences on the optical design of nanowire based LEDs. In particular we show numerically that light extraction efficiency as high as 72% can be expected for GaN nanowires layer grown on a low cost Si substrate.

© 2011 Optical Society of America

OCIS Codes
(120.2130) Instrumentation, measurement, and metrology : Ellipsometry and polarimetry
(220.2740) Optical design and fabrication : Geometric optical design
(230.3670) Optical devices : Light-emitting diodes
(260.1440) Physical optics : Birefringence
(050.6624) Diffraction and gratings : Subwavelength structures

ToC Category:
Optical Devices

Original Manuscript: August 10, 2010
Revised Manuscript: October 21, 2010
Manuscript Accepted: October 25, 2010
Published: January 3, 2011

Anne-Line Henneghien, Gabriel Tourbot, Bruno Daudin, Olivier Lartigue, Yohan Désières, and Jean-Michel Gérard, "Optical anisotropy and light extraction efficiency of MBE grown GaN nanowires epilayers," Opt. Express 19, 527-539 (2011)

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