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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 20 — Sep. 26, 2011
  • pp: 18827–18832

Etch-free low loss silicon waveguides using hydrogen silsesquioxane oxidation masks

Maziar P. Nezhad, Olesya Bondarenko, Mercedeh Khajavikhan, Aleksandar Simic, and Yeshaiahu Fainman  »View Author Affiliations

Optics Express, Vol. 19, Issue 20, pp. 18827-18832 (2011)

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An etch-free fabrication technique for creating low loss silicon waveguides in the silicon-on-insulator material system is proposed and demonstrated. The approach consists of local oxidation of a silicon-on-insulator chip covered with a e-beam patterned hydrogen silsesquioxane mask. A single oxidation step converts hydrogen silsesquioxane to a glass-like compound and simultaneously defines the waveguides, bypassing the need for any wet or dry etching steps. The spectral response of ring resonators fabricated using this technique was used to characterize the waveguide losses. Intrinsic Q-factors as high as 1.57 × 106, corresponding to a waveguide loss of 0.35dB/cm, were measured.

© 2011 OSA

OCIS Codes
(130.2790) Integrated optics : Guided waves
(130.3130) Integrated optics : Integrated optics materials
(230.7390) Optical devices : Waveguides, planar

ToC Category:
Integrated Optics

Original Manuscript: June 27, 2011
Revised Manuscript: August 25, 2011
Manuscript Accepted: August 26, 2011
Published: September 13, 2011

Maziar P. Nezhad, Olesya Bondarenko, Mercedeh Khajavikhan, Aleksandar Simic, and Yeshaiahu Fainman, "Etch-free low loss silicon waveguides using hydrogen silsesquioxane oxidation masks," Opt. Express 19, 18827-18832 (2011)

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