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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 20 — Sep. 26, 2011
  • pp: 19607–19612

High quantum efficiency GaP avalanche photodiodes

Dion McIntosh, Qiugui Zhou, Yaojia Chen, and Joe C. Campbell  »View Author Affiliations

Optics Express, Vol. 19, Issue 20, pp. 19607-19612 (2011)

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Gallium Phosphide (GaP) reach-through avalanche photodiodes (APDs) are reported. The APDs exhibited dark current less than a pico-ampere at unity gain. A quantum efficiency of 70% was achieved with a recessed window structure; this is almost two times higher than previous work.

© 2011 OSA

OCIS Codes
(250.0250) Optoelectronics : Optoelectronics
(040.1345) Detectors : Avalanche photodiodes (APDs)

ToC Category:

Original Manuscript: August 3, 2011
Revised Manuscript: September 2, 2011
Manuscript Accepted: September 6, 2011
Published: September 22, 2011

Dion McIntosh, Qiugui Zhou, Yaojia Chen, and Joe C. Campbell, "High quantum efficiency GaP avalanche photodiodes," Opt. Express 19, 19607-19612 (2011)

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  1. T. V. Blank, Y. A. Gol'dberg, E. V. Kalinina, O. V. Konstantinov, and E. A. Posse, “Ultraviolet radiation photodetectors based on structures consisting of a metal and a wide-bandgap semiconductor,” Semiconductors 37(8), 944–948 (2003). [CrossRef]
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  12. H. D. Liu, D. Mcintosh, X. G. Bai, H. P. Pan, M. G. Liu, J. C. Campbell, and H. Y. Cha, “4H-SiC PIN Recessed-Window Avalanche Photodiode With High Quantum Efficiency,” IEEE Photon. Technol. Lett. 20(18), 1551–1553 (2008). [CrossRef]
  13. D. E. Aspnes and A. A. Studna, “Dielectric Functions and Optical-Parameters of Si, Ge, Gap, Gaas, Gasb, Inp, Inas, and Insb from 1.5 to 6.0 Ev,” Phys. Rev. B 27(2), 985–1009 (1983). [CrossRef]
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