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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 20 — Sep. 26, 2011
  • pp: 19607–19612

High quantum efficiency GaP avalanche photodiodes

Dion McIntosh, Qiugui Zhou, Yaojia Chen, and Joe C. Campbell  »View Author Affiliations


Optics Express, Vol. 19, Issue 20, pp. 19607-19612 (2011)
http://dx.doi.org/10.1364/OE.19.019607


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Abstract

Gallium Phosphide (GaP) reach-through avalanche photodiodes (APDs) are reported. The APDs exhibited dark current less than a pico-ampere at unity gain. A quantum efficiency of 70% was achieved with a recessed window structure; this is almost two times higher than previous work.

© 2011 OSA

OCIS Codes
(250.0250) Optoelectronics : Optoelectronics
(040.1345) Detectors : Avalanche photodiodes (APDs)

ToC Category:
Detectors

History
Original Manuscript: August 3, 2011
Revised Manuscript: September 2, 2011
Manuscript Accepted: September 6, 2011
Published: September 22, 2011

Citation
Dion McIntosh, Qiugui Zhou, Yaojia Chen, and Joe C. Campbell, "High quantum efficiency GaP avalanche photodiodes," Opt. Express 19, 19607-19612 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-20-19607


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References

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