About the influence of Line Edge Roughness on measured effective–CD

doi:10.1364/OE.19.019967

Optics Express

Editor: C. Martijn de Sterke
Vol. 19, Iss. 21 — Oct. 10, 2011
pp: 19967–19972

About the influence of Line Edge Roughness on measured effective–CD

Bartosz Bilski, Karsten Frenner, and Wolfgang Osten »View Author Affiliations

Optics Express, Vol. 19, Issue 21, pp. 19967-19972 (2011)
http://dx.doi.org/10.1364/OE.19.019967

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Abstract
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Abstract

Various reports state that Line Edge/Width Roughness (LER/LWR) has a significant impact on the integrated circuits fabricated by means of lithography, hence there is a need to determine the LER in–line so that it never exceeds certain specified limits. In our work we deal with the challenge of measuring LER on 50nm resist gratings using scatterometry. We show by simulation that there is a difference between LER and no–LER scatter signatures which first: depends on the polarization and second: is proportional to the amount of LER. Moreover, we show that the mentioned difference is very specific, that is — a grating with LER acts like a grating without LER but showing another width (CD, Critical Dimension), which we refer–to as effective–CD.

OCIS Codes
(050.1950) Diffraction and gratings : Diffraction gratings
(120.3940) Instrumentation, measurement, and metrology : Metrology

ToC Category:
Instrumentation, Measurement, and Metrology

History
Original Manuscript: July 7, 2011
Revised Manuscript: August 24, 2011
Manuscript Accepted: August 24, 2011
Published: September 28, 2011

Citation
Bartosz Bilski, Karsten Frenner, and Wolfgang Osten, "About the influence of Line Edge Roughness on measured effective–CD," Opt. Express 19, 19967-19972 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-21-19967

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References

K. Shibata, N. Izumi, and K. Tsujita, “Influence of line–edge roughness on MOSFET devices with sub–50nm gates,” Proc. SPIE5375, 865–873 (2004). [CrossRef]
International Technology Roadmap for Semiconductors, www.itrs.net .
A. C. Diebold, Handbook of Silicon Semiconductor Metrology (CRC Press, 2001). [CrossRef]
A. E. Braun, “How CD–SEMs Complement Scatterometry,” Semicond. Int. Mag. (June2009).
G. Gallatin, “SPIE Short Course 886: Line Edge Roughness.”
W. Osten, V. Ferreras Paz, K. Frenner, T. Schuster, and H. Bloess, “Simulations of scatterometry down to 22nm structure sizes and beyond with special emphasis on LER,” in Frontiers of Characterization and Metrology for Nanoelectronics: 2009, E. M. Secula, D. G. Seiler, R. P. Khosla, D. Herr, C. M. Garner, R. McDonald, and A. C. Diebold, eds. (AIP Conference Proceedings, 2009). Vol. 1173, pp. 371–378.
B. C. Bergner, T. A. Germer, and T. J. Suleski, “Effect of line–width roughness on optical scatterometry measurements,” Proc. SPIE7272, 72720U (2009). [CrossRef]
B. C. Bergner, T. A. Germer, and T. J. Suleski, “Effective medium approximations for modeling optical reflectance from gratings with rough edges,” J. Opt. Soc. Am. A5, 1083–1090 (2010). [CrossRef]
M. Totzeck, “Numerical simulation of high–NA quantitative polarization microscopy and corresponding near–fields,” Optik112, 399–406 (2001).

Bergner, B. C.
Bloess, H.
Braun, A. E.
Diebold, A. C.
Ferreras Paz, V.
Frenner, K.
Gallatin, G.
Germer, T. A.
Izumi, N.
Osten, W.
Schuster, T.
Shibata, K.
Suleski, T. J.
Totzeck, M.
Tsujita, K.

J. Opt. Soc. Am. A

B. C. Bergner, T. A. Germer, and T. J. Suleski, “Effective medium approximations for modeling optical reflectance from gratings with rough edges,” J. Opt. Soc. Am. A5, 1083–1090 (2010). [CrossRef]

Optik

M. Totzeck, “Numerical simulation of high–NA quantitative polarization microscopy and corresponding near–fields,” Optik112, 399–406 (2001).

Proc. SPIE

B. C. Bergner, T. A. Germer, and T. J. Suleski, “Effect of line–width roughness on optical scatterometry measurements,” Proc. SPIE7272, 72720U (2009). [CrossRef]
K. Shibata, N. Izumi, and K. Tsujita, “Influence of line–edge roughness on MOSFET devices with sub–50nm gates,” Proc. SPIE5375, 865–873 (2004). [CrossRef]

Other

International Technology Roadmap for Semiconductors, www.itrs.net .
A. C. Diebold, Handbook of Silicon Semiconductor Metrology (CRC Press, 2001). [CrossRef]
A. E. Braun, “How CD–SEMs Complement Scatterometry,” Semicond. Int. Mag. (June2009).
G. Gallatin, “SPIE Short Course 886: Line Edge Roughness.”
W. Osten, V. Ferreras Paz, K. Frenner, T. Schuster, and H. Bloess, “Simulations of scatterometry down to 22nm structure sizes and beyond with special emphasis on LER,” in Frontiers of Characterization and Metrology for Nanoelectronics: 2009, E. M. Secula, D. G. Seiler, R. P. Khosla, D. Herr, C. M. Garner, R. McDonald, and A. C. Diebold, eds. (AIP Conference Proceedings, 2009). Vol. 1173, pp. 371–378.

2010, Bergner, J. Opt. Soc. Am. A
2009, Bergner, Proc. SPIE
2004, Shibata, Proc. SPIE
2001, Totzeck, Optik

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