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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 22 — Oct. 24, 2011
  • pp: 21692–21697

Single n-GaN microwire / p-Silicon thin film heterojunction light-emitting diode

Jaehui Ahn, Michael A. Mastro, Paul B. Klein, Jennifer K. Hite, Boris Feigelson, Charles R. Eddy, Jr., and Jihyun Kim  »View Author Affiliations

Optics Express, Vol. 19, Issue 22, pp. 21692-21697 (2011)

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The emission and waveguiding properties of individual GaN microwires as well as devices based on an n-GaN microwire / p-Si (100) junction were studied for relevance in optoelectronics and optical circuits. Pulsed photoluminescence of the GaN microwire excited in the transverse or longitudinal direction demonstrated gain. These n-type GaN microwires were positioned mechanically or by dielectrophoretic force onto pre-patterned electrodes on a p-type Si (100) substrate. Electroluminescence from this p-n point junction was characteristic of a heterostructure light-emitting diode. Additionally, waveguiding was observed along the length of the microwire for light originating from photoluminescence as well as from electroluminescence generated at the p-n junction.

© 2011 OSA

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes
(230.4000) Optical devices : Microstructure fabrication

ToC Category:
Optical Devices

Original Manuscript: August 1, 2011
Revised Manuscript: September 7, 2011
Manuscript Accepted: September 8, 2011
Published: October 19, 2011

Jaehui Ahn, Michael A. Mastro, Paul B. Klein, Jennifer K. Hite, Boris Feigelson, Charles R. Eddy, and Jihyun Kim, "Single n-GaN microwire / p-Silicon thin film heterojunction light-emitting diode," Opt. Express 19, 21692-21697 (2011)

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