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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 23 — Nov. 7, 2011
  • pp: 23036–23041

Enhanced electroluminescence of a-plane InGaN light emitting diodes grown on oxide-patterned r-plane sapphire substrates

Sung-Min Hwang, Hooyoung Song, Yong Gon Seo, Ji-Su Son, Jihoon Kim, and Kwang Hyeon Baik  »View Author Affiliations

Optics Express, Vol. 19, Issue 23, pp. 23036-23041 (2011)

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We report on the new fabrication method of a-plane InGaN light emitting diodes (LEDs) using the epitaxy on patterned insulator on sapphire substrate (EPISS). Cathodoluminescence spectrum of the fully coalesced a-plane GaN template showed that band edge emission intensity of the wing region was four times higher than that of the window region. Threading dislocations and basal stacking faults densities in wing region were ~1×107 cm−2 and ~5☓104 cm−1, respectively. Blue-emitting (443.4 nm) a-plane InGaN LED employing EPISS showed the optical power of 3.1 mW and the EL FWHM of 25.2 nm at the injection current of 20 mA.

© 2011 OSA

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Optical Devices

Original Manuscript: August 2, 2011
Revised Manuscript: October 12, 2011
Manuscript Accepted: October 16, 2011
Published: October 28, 2011

Sung-Min Hwang, Hooyoung Song, Yong Gon Seo, Ji-Su Son, Jihoon Kim, and Kwang Hyeon Baik, "Enhanced electroluminescence of a-plane InGaN light emitting diodes grown on oxide-patterned r-plane sapphire substrates," Opt. Express 19, 23036-23041 (2011)

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