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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 23 — Nov. 7, 2011
  • pp: 23341–23349

Optics InfoBase > Optics Express > Volume 19 > Issue 23 > Page 23341

High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit

Andrew R. J. Marshall, Pin Jern Ker, Andrey Krysa, John P. R. David, and Chee Hing Tan  »View Author Affiliations


Optics Express, Vol. 19, Issue 23, pp. 23341-23349 (2011)
http://dx.doi.org/10.1364/OE.19.023341


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Abstract

High bandwidth, uncooled, Indium Arsenide (InAs) electron avalanche photodiodes (e-APDs) with unique and highly desirable characteristics are reported. The e-APDs exhibit a 3dB bandwidth of 3.5 GHz which, unlike that of conventional APDs, is shown not to reduce with increasing avalanche gain. Hence these InAs e-APDs demonstrate a characteristic of theoretically ideal electron only APDs, the absence of a gain-bandwidth product limit. This is important because gain-bandwidth products restrict the maximum exploitable gain in all conventional high bandwidth APDs. Non-limiting gain-bandwidth products up to 580 GHz have been measured on these first high bandwidth e-APDs.

© 2011 OSA

OCIS Codes
(040.1345) Detectors : Avalanche photodiodes (APDs)
(250.0040) Optoelectronics : Detectors

ToC Category:
Detectors

History
Original Manuscript: August 19, 2011
Revised Manuscript: October 10, 2011
Manuscript Accepted: October 10, 2011
Published: November 1, 2011

Citation
Andrew R. J. Marshall, Pin Jern Ker, Andrey Krysa, John P. R. David, and Chee Hing Tan, "High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit," Opt. Express 19, 23341-23349 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-23-23341


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