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Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark currentChristopher T. DeRose, Douglas C. Trotter, William A. Zortman, Andrew L. Starbuck, Moz Fisher, Michael R. Watts, and Paul S. Davids »View Author Affiliations
Christopher T. DeRose,1,*
Douglas C. Trotter,1
William A. Zortman,1
Andrew L. Starbuck,1
Moz Fisher,2
Michael R. Watts,3
and Paul S. Davids1
1Sandia National Laboratory Applied Microphotonic Systems P.O. Box 5800, Albuquerque, New Mexico 87185, USA 2IQE Silicon Compounds St. Mellons, Cardiff. CF3 0LW, UK 3Massachusetts Institute of Technology Research Laboratory of Electronics 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA *Corresponding author: cderose@sandia.gov |
Optics Express, Vol. 19, Issue 25, pp. 24897-24904 (2011)
http://dx.doi.org/10.1364/OE.19.024897
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Abstract
We present a compact 1.3 × 4 μm2 Germanium waveguide photodiode, integrated in a CMOS compatible silicon photonics process flow. This photodiode has a best-in-class 3 dB cutoff frequency of 45 GHz, responsivity of 0.8 A/W and dark current of 3 nA. The low intrinsic capacitance of this device may enable the elimination of transimpedance amplifiers in future optical data communication receivers, creating ultra low power consumption optical communications.
© 2011 OSA
OCIS Codes
(040.5160) Detectors : Photodetectors
(040.6040) Detectors : Silicon
(060.4510) Fiber optics and optical communications : Optical communications
ToC Category:
Detectors
History
Original Manuscript: September 19, 2011
Revised Manuscript: November 3, 2011
Manuscript Accepted: November 8, 2011
Published: November 22, 2011
Citation
Christopher T. DeRose, Douglas C. Trotter, William A. Zortman, Andrew L. Starbuck, Moz Fisher, Michael R. Watts, and Paul S. Davids, "Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current," Opt. Express 19, 24897-24904 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-25-24897
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References
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Ahn, D.
Alon, E.
Asghari, M.
Assanto, G.
Beals, M.
Berroth, M.
Bolle, C. A.
Cannon, D. D.
Capellini, G.
Cassan, E.
Chen, J.
Chen, K. M.
Chen, Y.-K.
Chetrit, Y.
Colace, L.
Crozat, P.
Cunningham, J.
Cunningham, J. E.
Damlencourt, J.-F.
Danielson, D. T.
DeRose, C. T.
Doerr, C. R.
Dong, P.
Dosunmu, O.
Earnshaw, M. P.
Fedeli, J.-M.
Feng, D.
Feng, N.-N.
Ferrara, P.
Fong, J.
Fulgoni, F.
Gill, D. M.
Giziewicz, W.
Gunn, C.
Ho, R.
Hong, C.-Y.
Ishikawa, Y.
Jongthammanurak, S.
Jutzi, M.
Kartner, F. X.
Kaschel, M.
Kasper, E.
Kekatpure, R. D.
Kimerling, L. C.
Kirfel, O.
Krishnamoorthy, A.
Krishnamoorthy, A. V.
Kung, C.-C.
Laval, S.
Lecunff, Y.
Lee, K. K.
Lentine, A. L.
Lexau, J.
Li, G.
Liang, H.
Liao, S.
Lim, D. R.
Liu, F.
Liu, J.
Liu, Y.
Luan, H.-C.
Luck, D. L.
Luck, D.L.
Luo, Y.
Marris-Morini, D.
Masini, G.
Mekis, A.
Michel, J.
Miller, D. A. B.
Morse, M.
Morse, M. M.
Nash, L.
Nielson, G. N.
Oehme, M.
Omar, M. A.
Osmond, J.
Paniccia, M. J.
Patil, D.
Pinguet, T.
Qian, W.
Raj, K.
Rasras, M. S.
Reggiani, L.
Robertson, G.
Rubin, D.
Sahni, S.
Sandland, J. G.
Sarid, G.
Shafiiha, R.
Shi, J.
Thacker, H.
Trotter, D. C.
Vivien, L.
Wada, K.
Watts, M. R.
Watts, M.R.
Weiner, J. S.
Werner, J.
Witzens, J.
Wohl, G.
WWerner, J.
Yao, J.
Yin, T.
Young, R. W.
Zheng, D.
Zheng, X.
Zortman, W. A.
- D. Ahn, C.-Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Chen, F. X. Kartner, and J. Michel, “High performance, waveguide integrated Ge photodetectors” Opt. Express15, 3916–3921 (2007). [CrossRef] [PubMed]
- X. Zheng, F. Liu, D. Patil, H. Thacker, Y. Luo, T. Pinguet, A. Mekis, J. Yao, G. Li, J. Shi, K. Raj, J. Lexau, E. Alon, R. Ho, J. E. Cunningham, and A. Krishnamoorthy, “A sub-picojoule-per-bit CMOS photonic receiver for densely integrated systems,” Opt. Express 18, 204–211 (2010). [CrossRef] [PubMed]
- S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19, 10967–10972 (2011). [CrossRef] [PubMed]
- D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95, 261105 (2009). [CrossRef]
- L. Colace and G. Assanto, “Germanium on Silicon for Near-Infrared Light Sensing,” IEEE Photon. J. 1, 69–79 (2009). [CrossRef]
- L. Colace, P. Ferrara, G. Assanto, F. Fulgoni, and L. Nash, “Low Dark-Current Germanium-on-Silicon Near-Infrared Detectors,” IEEE Photon. Technol. Lett. 19, 1813–1815 (2007). [CrossRef]
- G. Masini, L. Colace, G. Assanto, H.-C. Luan, and L. C. Kimerling, “High-Performance p-i-n Ge on Si Photodetectors for the Near Infrared: From Model to Demonstration,” IEEE Trans. Electron Devices 48, 1092–1096 (2001). [CrossRef]
- D. Ahn, C.-Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Chen, F. X. Kartner, and J. Michel, “High performance, waveguide integrated Ge photodetectors” Opt. Express15, 3916–3921 (2007). [CrossRef] [PubMed]
- M. Oehme, J. Werner, E. Kasper, M. Jutzi, and M. Berroth, “High bandwidth Ge p-i-n photodetector integrated on Si,” Appl. Phys. Lett. 89, 071117 (2006). [CrossRef]
- M. Jutzi, M. Berroth, G. Wohl, M. Oehme, and E. Kasper, “Ge-on-Si Vertical Incidence Photodiodes With 39-GHz Bandwidth,” IEEE Photon. Technol. Lett. 17, 1510–1512 (2005). [CrossRef]
- M. S. Rasras, D. M. Gill, M. P. Earnshaw, C. R. Doerr, J. S. Weiner, C. A. Bolle, and Y.-K. Chen, “CMOS Silicon Receiver Integrated With Ge Detector and Reconfigurable Optical Filter,” IEEE Photon. Technol. Lett. 22, 112–114 (2010). [CrossRef]
- J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, and L. C. Kimerling, “Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications,” Appl. Phys. Lett. 87, 011110 (2005). [CrossRef]
- G. Masini, S. Sahni, G. Capellini, J. Witzens, and C. Gunn, “High-Speed Near Infrared Optical Receivers Based on Ge Waveguide Photodetectors Integrated in a CMOS Process,” Advances in Optical Technologies196572 (5 pp.) (2008).
- L. Vivien, J. Osmond, J.-M. Fedeli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n. Germanium photodetector integrated in a silicon-on-insulator waveguide,” Opt. Express 1, 6252–6257 (2009). [CrossRef]
- D. Ahn, C.-Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Chen, F. X. Kartner, and J. Michel, “High performance, waveguide integrated Ge photodetectors” Opt. Express15, 3916–3921 (2007). [CrossRef] [PubMed]
- H.-C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75, 2909–2911 (1999). [CrossRef]
- M. S. Rasras, D. M. Gill, M. P. Earnshaw, C. R. Doerr, J. S. Weiner, C. A. Bolle, and Y.-K. Chen, “CMOS Silicon Receiver Integrated With Ge Detector and Reconfigurable Optical Filter,” IEEE Photon. Technol. Lett. 22, 112–114 (2010). [CrossRef]
- T. Yin, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate” Opt. Express 15, 13965–13971 (2007). [CrossRef] [PubMed]
- M. Morse, O. Dosunmu, G. Sarid, and Y. Chetrit, “Performance of Ge-on-Si p-i-n Photodetectors for Standard Receiver Modules,” IEEE Photon. Technol. Lett. 18, 2442–2444 (2006). [CrossRef]
- L. Colace and G. Assanto, “Germanium on Silicon for Near-Infrared Light Sensing,” IEEE Photon. J. 1, 69–79 (2009). [CrossRef]
- L. Colace, P. Ferrara, G. Assanto, F. Fulgoni, and L. Nash, “Low Dark-Current Germanium-on-Silicon Near-Infrared Detectors,” IEEE Photon. Technol. Lett. 19, 1813–1815 (2007). [CrossRef]
- G. Masini, L. Colace, G. Assanto, H.-C. Luan, and L. C. Kimerling, “High-Performance p-i-n Ge on Si Photodetectors for the Near Infrared: From Model to Demonstration,” IEEE Trans. Electron Devices 48, 1092–1096 (2001). [CrossRef]
- L. Vivien, J. Osmond, J.-M. Fedeli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n. Germanium photodetector integrated in a silicon-on-insulator waveguide,” Opt. Express 1, 6252–6257 (2009). [CrossRef]
- D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95, 261105 (2009). [CrossRef]
- S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19, 10967–10972 (2011). [CrossRef] [PubMed]
- X. Zheng, F. Liu, D. Patil, H. Thacker, Y. Luo, T. Pinguet, A. Mekis, J. Yao, G. Li, J. Shi, K. Raj, J. Lexau, E. Alon, R. Ho, J. E. Cunningham, and A. Krishnamoorthy, “A sub-picojoule-per-bit CMOS photonic receiver for densely integrated systems,” Opt. Express 18, 204–211 (2010). [CrossRef] [PubMed]
- L. Vivien, J. Osmond, J.-M. Fedeli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n. Germanium photodetector integrated in a silicon-on-insulator waveguide,” Opt. Express 1, 6252–6257 (2009). [CrossRef]
- J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, and L. C. Kimerling, “Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications,” Appl. Phys. Lett. 87, 011110 (2005). [CrossRef]
- C. T. DeRose, M. R. Watts, D. C. Trotter, D.L. Luck, G. N. Nielson, and R. W. Young, “Silicon Microring Modulator with Integrated Heater and Temperature Sensor for Thermal Control,” in 2010 Conference on Lasers and Electro-Optics (CLEO), (Optical Society of America, 2010) paper CThJ3.
- C. T. DeRose, M. R. Watts, R. W. Young, D. C. Trotter, G. N. Nielson, W. A. Zortman, and R. D. Kekatpure, “Low power and broadband 2x2 silicon thermo-optic switch,” in Optical Fiber Communication Confererence (Optical Society of America, 2011) paper OThM3.
- M. S. Rasras, D. M. Gill, M. P. Earnshaw, C. R. Doerr, J. S. Weiner, C. A. Bolle, and Y.-K. Chen, “CMOS Silicon Receiver Integrated With Ge Detector and Reconfigurable Optical Filter,” IEEE Photon. Technol. Lett. 22, 112–114 (2010). [CrossRef]
- S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19, 10967–10972 (2011). [CrossRef] [PubMed]
- D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95, 261105 (2009). [CrossRef]
- M. Morse, O. Dosunmu, G. Sarid, and Y. Chetrit, “Performance of Ge-on-Si p-i-n Photodetectors for Standard Receiver Modules,” IEEE Photon. Technol. Lett. 18, 2442–2444 (2006). [CrossRef]
- M. S. Rasras, D. M. Gill, M. P. Earnshaw, C. R. Doerr, J. S. Weiner, C. A. Bolle, and Y.-K. Chen, “CMOS Silicon Receiver Integrated With Ge Detector and Reconfigurable Optical Filter,” IEEE Photon. Technol. Lett. 22, 112–114 (2010). [CrossRef]
- L. Vivien, J. Osmond, J.-M. Fedeli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n. Germanium photodetector integrated in a silicon-on-insulator waveguide,” Opt. Express 1, 6252–6257 (2009). [CrossRef]
- S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19, 10967–10972 (2011). [CrossRef] [PubMed]
- D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95, 261105 (2009). [CrossRef]
- S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19, 10967–10972 (2011). [CrossRef] [PubMed]
- D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95, 261105 (2009). [CrossRef]
- L. Colace, P. Ferrara, G. Assanto, F. Fulgoni, and L. Nash, “Low Dark-Current Germanium-on-Silicon Near-Infrared Detectors,” IEEE Photon. Technol. Lett. 19, 1813–1815 (2007). [CrossRef]
- S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19, 10967–10972 (2011). [CrossRef] [PubMed]
- D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95, 261105 (2009). [CrossRef]
- L. Colace, P. Ferrara, G. Assanto, F. Fulgoni, and L. Nash, “Low Dark-Current Germanium-on-Silicon Near-Infrared Detectors,” IEEE Photon. Technol. Lett. 19, 1813–1815 (2007). [CrossRef]
- M. S. Rasras, D. M. Gill, M. P. Earnshaw, C. R. Doerr, J. S. Weiner, C. A. Bolle, and Y.-K. Chen, “CMOS Silicon Receiver Integrated With Ge Detector and Reconfigurable Optical Filter,” IEEE Photon. Technol. Lett. 22, 112–114 (2010). [CrossRef]
- D. Ahn, C.-Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Chen, F. X. Kartner, and J. Michel, “High performance, waveguide integrated Ge photodetectors” Opt. Express15, 3916–3921 (2007). [CrossRef] [PubMed]
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- M. R. Watts, D. C. Trotter, R. W. Young, and A. L. Lentine, “Ultralow Power Silicon Microdisk Modulators and Switches,” in Proceedings of IEEE International Conference on Group IV Photonics (IEEE, 2008) pp.4–6. [CrossRef]
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- C. T. DeRose, M. R. Watts, D. C. Trotter, D.L. Luck, G. N. Nielson, and R. W. Young, “Silicon Microring Modulator with Integrated Heater and Temperature Sensor for Thermal Control,” in 2010 Conference on Lasers and Electro-Optics (CLEO), (Optical Society of America, 2010) paper CThJ3.
- C. T. DeRose, M. R. Watts, R. W. Young, D. C. Trotter, G. N. Nielson, W. A. Zortman, and R. D. Kekatpure, “Low power and broadband 2x2 silicon thermo-optic switch,” in Optical Fiber Communication Confererence (Optical Society of America, 2011) paper OThM3.
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- M. R. Watts, D. C. Trotter, R. W. Young, and A. L. Lentine, “Maximally confined silicon microphotonic modulators and switches,” in Proceedings of LEOS (IEEE, 2008) pp. 457–458.
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- C. T. DeRose, M. R. Watts, D. C. Trotter, D.L. Luck, G. N. Nielson, and R. W. Young, “Silicon Microring Modulator with Integrated Heater and Temperature Sensor for Thermal Control,” in 2010 Conference on Lasers and Electro-Optics (CLEO), (Optical Society of America, 2010) paper CThJ3.
- W. A. Zortman, D. C. Trotter, A. L. Lentine, G. Robertson, and M. R. Watts, “Monolithic Integration of Silicon Electronics and Photonics,” in 2011 IEEE Winter Topicals (WTM), (IEEE, 2011) pp. 139–140. [CrossRef]
- C. T. DeRose, M. R. Watts, R. W. Young, D. C. Trotter, G. N. Nielson, W. A. Zortman, and R. D. Kekatpure, “Low power and broadband 2x2 silicon thermo-optic switch,” in Optical Fiber Communication Confererence (Optical Society of America, 2011) paper OThM3.
- L. Vivien, J. Osmond, J.-M. Fedeli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n. Germanium photodetector integrated in a silicon-on-insulator waveguide,” Opt. Express 1, 6252–6257 (2009). [CrossRef]
- J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, and L. C. Kimerling, “Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications,” Appl. Phys. Lett. 87, 011110 (2005). [CrossRef]
- H.-C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75, 2909–2911 (1999). [CrossRef]
- M. R. Watts, W. A. Zortman, D. C. Trotter, R. W. Young, and A. L. Lentine, “Low-Voltage, Compact, Depletion-Mode, Silicon Mach-Zehnder Modulator,”IEEE J. Sel. Topics Quatnum Electron. 16, 159–164 (2010). [CrossRef]
- W. A. Zortman, M. R. Watts, D. C. Trotter, R. W. Young, and A. L. Lentine, “Low-Power High-Speed Silicon Microdisk Modulators,” in 2010 Conference on Lasers and Electro-Optics (CLEO), (Optical Society of America, 2010) paper CThJ4.
- C. T. DeRose, M. R. Watts, D. C. Trotter, D.L. Luck, G. N. Nielson, and R. W. Young, “Silicon Microring Modulator with Integrated Heater and Temperature Sensor for Thermal Control,” in 2010 Conference on Lasers and Electro-Optics (CLEO), (Optical Society of America, 2010) paper CThJ3.
- W. A. Zortman, D. C. Trotter, A. L. Lentine, G. Robertson, and M. R. Watts, “Monolithic Integration of Silicon Electronics and Photonics,” in 2011 IEEE Winter Topicals (WTM), (IEEE, 2011) pp. 139–140. [CrossRef]
- C. T. DeRose, M. R. Watts, R. W. Young, D. C. Trotter, G. N. Nielson, W. A. Zortman, and R. D. Kekatpure, “Low power and broadband 2x2 silicon thermo-optic switch,” in Optical Fiber Communication Confererence (Optical Society of America, 2011) paper OThM3.
- M. R. Watts, D. C. Trotter, R. W. Young, and A. L. Lentine, “Maximally confined silicon microphotonic modulators and switches,” in Proceedings of LEOS (IEEE, 2008) pp. 457–458.
- M. R. Watts, W. A. Zortman, D. C. Trotter, G. N. Nielson, D. L. Luck, and R. W. Young, “Adiabatic resonant microrings (ARMs) with directly integrated thermal microphotonics,” in 2009 Conference on Lasers and Electro-Optics (CLEO), (Optical Society of America, 2009) paper CPDB10.
- M. R. Watts, D. C. Trotter, R. W. Young, and A. L. Lentine, “Ultralow Power Silicon Microdisk Modulators and Switches,” in Proceedings of IEEE International Conference on Group IV Photonics (IEEE, 2008) pp.4–6. [CrossRef]
- M.R. Watts, D. C. Trotter, R. W. Young, A. L. Lentine, and W. A. Zortman, “Limits to Silicon Modulator Bandwidth and Power Consumption,” Proc. SPIE 7221, 72210M-1–72210M-8 (2009).
- M. S. Rasras, D. M. Gill, M. P. Earnshaw, C. R. Doerr, J. S. Weiner, C. A. Bolle, and Y.-K. Chen, “CMOS Silicon Receiver Integrated With Ge Detector and Reconfigurable Optical Filter,” IEEE Photon. Technol. Lett. 22, 112–114 (2010). [CrossRef]
- M. Oehme, J. Werner, E. Kasper, M. Jutzi, and M. Berroth, “High bandwidth Ge p-i-n photodetector integrated on Si,” Appl. Phys. Lett. 89, 071117 (2006). [CrossRef]
- G. Masini, S. Sahni, G. Capellini, J. Witzens, and C. Gunn, “High-Speed Near Infrared Optical Receivers Based on Ge Waveguide Photodetectors Integrated in a CMOS Process,” Advances in Optical Technologies196572 (5 pp.) (2008).
- M. Jutzi, M. Berroth, G. Wohl, M. Oehme, and E. Kasper, “Ge-on-Si Vertical Incidence Photodiodes With 39-GHz Bandwidth,” IEEE Photon. Technol. Lett. 17, 1510–1512 (2005). [CrossRef]
- M. Oehme, J. WWerner, M. Kaschel, O. Kirfel, and E. Kasper, “Germanium waveguide photodetectors integrated on silicon with MBE,” Thin Solid Films 517, 137–139 (2008). [CrossRef]
- X. Zheng, F. Liu, D. Patil, H. Thacker, Y. Luo, T. Pinguet, A. Mekis, J. Yao, G. Li, J. Shi, K. Raj, J. Lexau, E. Alon, R. Ho, J. E. Cunningham, and A. Krishnamoorthy, “A sub-picojoule-per-bit CMOS photonic receiver for densely integrated systems,” Opt. Express 18, 204–211 (2010). [CrossRef] [PubMed]
- M. R. Watts, W. A. Zortman, D. C. Trotter, R. W. Young, and A. L. Lentine, “Low-Voltage, Compact, Depletion-Mode, Silicon Mach-Zehnder Modulator,”IEEE J. Sel. Topics Quatnum Electron. 16, 159–164 (2010). [CrossRef]
- M.R. Watts, D. C. Trotter, R. W. Young, A. L. Lentine, and W. A. Zortman, “Limits to Silicon Modulator Bandwidth and Power Consumption,” Proc. SPIE 7221, 72210M-1–72210M-8 (2009).
- M. R. Watts, D. C. Trotter, R. W. Young, and A. L. Lentine, “Maximally confined silicon microphotonic modulators and switches,” in Proceedings of LEOS (IEEE, 2008) pp. 457–458.
- M. R. Watts, D. C. Trotter, R. W. Young, and A. L. Lentine, “Ultralow Power Silicon Microdisk Modulators and Switches,” in Proceedings of IEEE International Conference on Group IV Photonics (IEEE, 2008) pp.4–6. [CrossRef]
- M. R. Watts, W. A. Zortman, D. C. Trotter, G. N. Nielson, D. L. Luck, and R. W. Young, “Adiabatic resonant microrings (ARMs) with directly integrated thermal microphotonics,” in 2009 Conference on Lasers and Electro-Optics (CLEO), (Optical Society of America, 2009) paper CPDB10.
- W. A. Zortman, M. R. Watts, D. C. Trotter, R. W. Young, and A. L. Lentine, “Low-Power High-Speed Silicon Microdisk Modulators,” in 2010 Conference on Lasers and Electro-Optics (CLEO), (Optical Society of America, 2010) paper CThJ4.
- C. T. DeRose, M. R. Watts, D. C. Trotter, D.L. Luck, G. N. Nielson, and R. W. Young, “Silicon Microring Modulator with Integrated Heater and Temperature Sensor for Thermal Control,” in 2010 Conference on Lasers and Electro-Optics (CLEO), (Optical Society of America, 2010) paper CThJ3.
- C. T. DeRose, M. R. Watts, R. W. Young, D. C. Trotter, G. N. Nielson, W. A. Zortman, and R. D. Kekatpure, “Low power and broadband 2x2 silicon thermo-optic switch,” in Optical Fiber Communication Confererence (Optical Society of America, 2011) paper OThM3.
- D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95, 261105 (2009). [CrossRef]
- X. Zheng, F. Liu, D. Patil, H. Thacker, Y. Luo, T. Pinguet, A. Mekis, J. Yao, G. Li, J. Shi, K. Raj, J. Lexau, E. Alon, R. Ho, J. E. Cunningham, and A. Krishnamoorthy, “A sub-picojoule-per-bit CMOS photonic receiver for densely integrated systems,” Opt. Express 18, 204–211 (2010). [CrossRef] [PubMed]
- M. R. Watts, W. A. Zortman, D. C. Trotter, R. W. Young, and A. L. Lentine, “Low-Voltage, Compact, Depletion-Mode, Silicon Mach-Zehnder Modulator,”IEEE J. Sel. Topics Quatnum Electron. 16, 159–164 (2010). [CrossRef]
- M.R. Watts, D. C. Trotter, R. W. Young, A. L. Lentine, and W. A. Zortman, “Limits to Silicon Modulator Bandwidth and Power Consumption,” Proc. SPIE 7221, 72210M-1–72210M-8 (2009).
- M. R. Watts, W. A. Zortman, D. C. Trotter, G. N. Nielson, D. L. Luck, and R. W. Young, “Adiabatic resonant microrings (ARMs) with directly integrated thermal microphotonics,” in 2009 Conference on Lasers and Electro-Optics (CLEO), (Optical Society of America, 2009) paper CPDB10.
- W. A. Zortman, M. R. Watts, D. C. Trotter, R. W. Young, and A. L. Lentine, “Low-Power High-Speed Silicon Microdisk Modulators,” in 2010 Conference on Lasers and Electro-Optics (CLEO), (Optical Society of America, 2010) paper CThJ4.
- W. A. Zortman, D. C. Trotter, A. L. Lentine, G. Robertson, and M. R. Watts, “Monolithic Integration of Silicon Electronics and Photonics,” in 2011 IEEE Winter Topicals (WTM), (IEEE, 2011) pp. 139–140. [CrossRef]
- C. T. DeRose, M. R. Watts, R. W. Young, D. C. Trotter, G. N. Nielson, W. A. Zortman, and R. D. Kekatpure, “Low power and broadband 2x2 silicon thermo-optic switch,” in Optical Fiber Communication Confererence (Optical Society of America, 2011) paper OThM3.
Appl. Phys. Lett.
- D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95, 261105 (2009). [CrossRef]
- J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, and L. C. Kimerling, “Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications,” Appl. Phys. Lett. 87, 011110 (2005). [CrossRef]
- M. Oehme, J. Werner, E. Kasper, M. Jutzi, and M. Berroth, “High bandwidth Ge p-i-n photodetector integrated on Si,” Appl. Phys. Lett. 89, 071117 (2006). [CrossRef]
- H.-C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75, 2909–2911 (1999). [CrossRef]
IEEE J. Sel. Topics Quatnum Electron.
- M. R. Watts, W. A. Zortman, D. C. Trotter, R. W. Young, and A. L. Lentine, “Low-Voltage, Compact, Depletion-Mode, Silicon Mach-Zehnder Modulator,”IEEE J. Sel. Topics Quatnum Electron. 16, 159–164 (2010). [CrossRef]
IEEE Photon. J.
- L. Colace and G. Assanto, “Germanium on Silicon for Near-Infrared Light Sensing,” IEEE Photon. J. 1, 69–79 (2009). [CrossRef]
IEEE Photon. Technol. Lett.
- L. Colace, P. Ferrara, G. Assanto, F. Fulgoni, and L. Nash, “Low Dark-Current Germanium-on-Silicon Near-Infrared Detectors,” IEEE Photon. Technol. Lett. 19, 1813–1815 (2007). [CrossRef]
- M. Jutzi, M. Berroth, G. Wohl, M. Oehme, and E. Kasper, “Ge-on-Si Vertical Incidence Photodiodes With 39-GHz Bandwidth,” IEEE Photon. Technol. Lett. 17, 1510–1512 (2005). [CrossRef]
- M. Morse, O. Dosunmu, G. Sarid, and Y. Chetrit, “Performance of Ge-on-Si p-i-n Photodetectors for Standard Receiver Modules,” IEEE Photon. Technol. Lett. 18, 2442–2444 (2006). [CrossRef]
- M. S. Rasras, D. M. Gill, M. P. Earnshaw, C. R. Doerr, J. S. Weiner, C. A. Bolle, and Y.-K. Chen, “CMOS Silicon Receiver Integrated With Ge Detector and Reconfigurable Optical Filter,” IEEE Photon. Technol. Lett. 22, 112–114 (2010). [CrossRef]
IEEE Trans. Electron Devices
- G. Masini, L. Colace, G. Assanto, H.-C. Luan, and L. C. Kimerling, “High-Performance p-i-n Ge on Si Photodetectors for the Near Infrared: From Model to Demonstration,” IEEE Trans. Electron Devices 48, 1092–1096 (2001). [CrossRef]
Nature Photonics
- J. Michel, J. Liu, and L. C. Kimerling, “High-performance Ge-on-Si photodetectors,” Nature Photonics 4, 527–534 (2010). [CrossRef]
Opt. Express
- S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19, 10967–10972 (2011). [CrossRef] [PubMed]
- T. Yin, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate” Opt. Express 15, 13965–13971 (2007). [CrossRef] [PubMed]
- X. Zheng, F. Liu, D. Patil, H. Thacker, Y. Luo, T. Pinguet, A. Mekis, J. Yao, G. Li, J. Shi, K. Raj, J. Lexau, E. Alon, R. Ho, J. E. Cunningham, and A. Krishnamoorthy, “A sub-picojoule-per-bit CMOS photonic receiver for densely integrated systems,” Opt. Express 18, 204–211 (2010). [CrossRef] [PubMed]
- L. Vivien, J. Osmond, J.-M. Fedeli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n. Germanium photodetector integrated in a silicon-on-insulator waveguide,” Opt. Express 1, 6252–6257 (2009). [CrossRef]
Proc. IEEE
- D. A. B. Miller, “Device Requirements for Optical Interconnects to Silicon Chips,” Proc. IEEE 97, 1167–1185 (2009). [CrossRef]
Proc. SPIE
- M.R. Watts, D. C. Trotter, R. W. Young, A. L. Lentine, and W. A. Zortman, “Limits to Silicon Modulator Bandwidth and Power Consumption,” Proc. SPIE 7221, 72210M-1–72210M-8 (2009).
Solid State Electron.
- M. A. Omar and L. Reggiani, “Drift Velocity and Diffusivity of Hot Carriers in Germanium: Model Calculations,” Solid State Electron. 30, 1351–1354 (1987). [CrossRef]
Thin Solid Films
- M. Oehme, J. WWerner, M. Kaschel, O. Kirfel, and E. Kasper, “Germanium waveguide photodetectors integrated on silicon with MBE,” Thin Solid Films 517, 137–139 (2008). [CrossRef]
Other
- D. Ahn, C.-Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Chen, F. X. Kartner, and J. Michel, “High performance, waveguide integrated Ge photodetectors” Opt. Express15, 3916–3921 (2007). [CrossRef] [PubMed]
- G. Masini, S. Sahni, G. Capellini, J. Witzens, and C. Gunn, “High-Speed Near Infrared Optical Receivers Based on Ge Waveguide Photodetectors Integrated in a CMOS Process,” Advances in Optical Technologies196572 (5 pp.) (2008).
- M. R. Watts, D. C. Trotter, R. W. Young, and A. L. Lentine, “Ultralow Power Silicon Microdisk Modulators and Switches,” in Proceedings of IEEE International Conference on Group IV Photonics (IEEE, 2008) pp.4–6. [CrossRef]
- M. R. Watts, D. C. Trotter, R. W. Young, and A. L. Lentine, “Maximally confined silicon microphotonic modulators and switches,” in Proceedings of LEOS (IEEE, 2008) pp. 457–458.
- M. R. Watts, W. A. Zortman, D. C. Trotter, G. N. Nielson, D. L. Luck, and R. W. Young, “Adiabatic resonant microrings (ARMs) with directly integrated thermal microphotonics,” in 2009 Conference on Lasers and Electro-Optics (CLEO), (Optical Society of America, 2009) paper CPDB10.
- W. A. Zortman, M. R. Watts, D. C. Trotter, R. W. Young, and A. L. Lentine, “Low-Power High-Speed Silicon Microdisk Modulators,” in 2010 Conference on Lasers and Electro-Optics (CLEO), (Optical Society of America, 2010) paper CThJ4.
- C. T. DeRose, M. R. Watts, D. C. Trotter, D.L. Luck, G. N. Nielson, and R. W. Young, “Silicon Microring Modulator with Integrated Heater and Temperature Sensor for Thermal Control,” in 2010 Conference on Lasers and Electro-Optics (CLEO), (Optical Society of America, 2010) paper CThJ3.
- W. A. Zortman, D. C. Trotter, A. L. Lentine, G. Robertson, and M. R. Watts, “Monolithic Integration of Silicon Electronics and Photonics,” in 2011 IEEE Winter Topicals (WTM), (IEEE, 2011) pp. 139–140. [CrossRef]
- C. T. DeRose, M. R. Watts, R. W. Young, D. C. Trotter, G. N. Nielson, W. A. Zortman, and R. D. Kekatpure, “Low power and broadband 2x2 silicon thermo-optic switch,” in Optical Fiber Communication Confererence (Optical Society of America, 2011) paper OThM3.
2011, Liao, Opt. Express
- X. Zheng, F. Liu, D. Patil, H. Thacker, Y. Luo, T. Pinguet, A. Mekis, J. Yao, G. Li, J. Shi, K. Raj, J. Lexau, E. Alon, R. Ho, J. E. Cunningham, and A. Krishnamoorthy, “A sub-picojoule-per-bit CMOS photonic receiver for densely integrated systems,” Opt. Express 18, 204–211 (2010). [CrossRef] [PubMed]
- M. S. Rasras, D. M. Gill, M. P. Earnshaw, C. R. Doerr, J. S. Weiner, C. A. Bolle, and Y.-K. Chen, “CMOS Silicon Receiver Integrated With Ge Detector and Reconfigurable Optical Filter,” IEEE Photon. Technol. Lett. 22, 112–114 (2010). [CrossRef]
- J. Michel, J. Liu, and L. C. Kimerling, “High-performance Ge-on-Si photodetectors,” Nature Photonics 4, 527–534 (2010). [CrossRef]
- M. R. Watts, W. A. Zortman, D. C. Trotter, R. W. Young, and A. L. Lentine, “Low-Voltage, Compact, Depletion-Mode, Silicon Mach-Zehnder Modulator,”IEEE J. Sel. Topics Quatnum Electron. 16, 159–164 (2010). [CrossRef]
- L. Colace and G. Assanto, “Germanium on Silicon for Near-Infrared Light Sensing,” IEEE Photon. J. 1, 69–79 (2009). [CrossRef]
- D. A. B. Miller, “Device Requirements for Optical Interconnects to Silicon Chips,” Proc. IEEE 97, 1167–1185 (2009). [CrossRef]
- M.R. Watts, D. C. Trotter, R. W. Young, A. L. Lentine, and W. A. Zortman, “Limits to Silicon Modulator Bandwidth and Power Consumption,” Proc. SPIE 7221, 72210M-1–72210M-8 (2009).
- L. Vivien, J. Osmond, J.-M. Fedeli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n. Germanium photodetector integrated in a silicon-on-insulator waveguide,” Opt. Express 1, 6252–6257 (2009). [CrossRef]
- D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95, 261105 (2009). [CrossRef]
- M. Oehme, J. WWerner, M. Kaschel, O. Kirfel, and E. Kasper, “Germanium waveguide photodetectors integrated on silicon with MBE,” Thin Solid Films 517, 137–139 (2008). [CrossRef]
- L. Colace, P. Ferrara, G. Assanto, F. Fulgoni, and L. Nash, “Low Dark-Current Germanium-on-Silicon Near-Infrared Detectors,” IEEE Photon. Technol. Lett. 19, 1813–1815 (2007). [CrossRef]
- M. Morse, O. Dosunmu, G. Sarid, and Y. Chetrit, “Performance of Ge-on-Si p-i-n Photodetectors for Standard Receiver Modules,” IEEE Photon. Technol. Lett. 18, 2442–2444 (2006). [CrossRef]
- M. Oehme, J. Werner, E. Kasper, M. Jutzi, and M. Berroth, “High bandwidth Ge p-i-n photodetector integrated on Si,” Appl. Phys. Lett. 89, 071117 (2006). [CrossRef]
- J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, and L. C. Kimerling, “Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications,” Appl. Phys. Lett. 87, 011110 (2005). [CrossRef]
- M. Jutzi, M. Berroth, G. Wohl, M. Oehme, and E. Kasper, “Ge-on-Si Vertical Incidence Photodiodes With 39-GHz Bandwidth,” IEEE Photon. Technol. Lett. 17, 1510–1512 (2005). [CrossRef]
- G. Masini, L. Colace, G. Assanto, H.-C. Luan, and L. C. Kimerling, “High-Performance p-i-n Ge on Si Photodetectors for the Near Infrared: From Model to Demonstration,” IEEE Trans. Electron Devices 48, 1092–1096 (2001). [CrossRef]
- H.-C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75, 2909–2911 (1999). [CrossRef]
- M. A. Omar and L. Reggiani, “Drift Velocity and Diffusivity of Hot Carriers in Germanium: Model Calculations,” Solid State Electron. 30, 1351–1354 (1987). [CrossRef]
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