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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 26 — Dec. 12, 2011
  • pp: B385–B390

High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode

Zhi Li, Yang Fu, Molly Piels, Huapu Pan, Andreas Beling, John E. Bowers, and Joe C. Campbell  »View Author Affiliations

Optics Express, Vol. 19, Issue 26, pp. B385-B390 (2011)

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We demonstrate a flip-chip bonded modified uni-traveling carrier (MUTC) photodiode with an RF output power of 0.75 W (28.8 dBm) at 15 GHz and OIP3 as high as 59 dBm. The photodiode has a responsivity of 0.7 A/W, 3-dB bandwidth > 15 GHz, and saturation photocurrent > 180 mA at 11 V reverse bias.

© 2011 OSA

OCIS Codes
(040.5160) Detectors : Photodetectors
(230.5170) Optical devices : Photodiodes

ToC Category:
Waveguide and Opto-Electronic Devices

Original Manuscript: October 3, 2011
Revised Manuscript: October 30, 2011
Manuscript Accepted: November 1, 2011
Published: November 18, 2011

Virtual Issues
European Conference on Optical Communication 2011 (2011) Optics Express

Zhi Li, Yang Fu, Molly Piels, Huapu Pan, Andreas Beling, John E. Bowers, and Joe C. Campbell, "High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode," Opt. Express 19, B385-B390 (2011)

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