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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 26 — Dec. 12, 2011
  • pp: B75–B80

10 GHz AlGaInAs/InP 1.55 μm passively mode-locked laser with low divergence angle and timing jitter

Lianping Hou, Mohsin Haji, John H. Marsh, and A. Catrina Bryce  »View Author Affiliations


Optics Express, Vol. 19, Issue 26, pp. B75-B80 (2011)
http://dx.doi.org/10.1364/OE.19.000B75


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Abstract

We present a 10 GHz 1.55 μm all-active passively mode-locked laser based on a novel AlGaInAs/InP epitaxial structure with a three-quantum-well active layer and a passive far-field reduction layer. The device generated 1.06 ps pulses with a state-of-the-art timing jitter value of 194 fs (4-80 MHz), and a radio-frequency linewidth of 2 kHz, while demonstrating a low divergence angle (14.7° × 27.3°) with a twofold butt coupling efficiency to a flat cleaved single mode fiber, compared to the conventional five-quantum-well MLLs.

© 2011 OSA

OCIS Codes
(140.3300) Lasers and laser optics : Laser beam shaping
(140.4050) Lasers and laser optics : Mode-locked lasers
(140.5960) Lasers and laser optics : Semiconductor lasers

ToC Category:
Waveguide and Opto-Electronic Devices

History
Original Manuscript: September 26, 2011
Revised Manuscript: October 26, 2011
Manuscript Accepted: October 26, 2011
Published: November 16, 2011

Virtual Issues
European Conference on Optical Communication 2011 (2011) Optics Express

Citation
Lianping Hou, Mohsin Haji, John H. Marsh, and A. Catrina Bryce, "10 GHz AlGaInAs/InP 1.55 μm passively mode-locked laser with low divergence angle and timing jitter," Opt. Express 19, B75-B80 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-26-B75


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