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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 27 — Dec. 19, 2011
  • pp: 25911–25917

THz generation at 1.55 µm excitation: six-fold increase in THz conversion efficiency by separated photoconductive and trapping regions

Roman J. B. Dietz, Marina Gerhard, Dennis Stanze, Martin Koch, Bernd Sartorius, and Martin Schell  »View Author Affiliations


Optics Express, Vol. 19, Issue 27, pp. 25911-25917 (2011)
http://dx.doi.org/10.1364/OE.19.025911


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Abstract

We present first results on photoconductive THz emitters for 1.55µm excitation. The emitters are based on MBE grown In0.53Ga0.47As/In0.52Al0.48As multilayer heterostructures (MLHS) with high carrier mobility. The high mobility is achieved by spatial separation of photoconductive and trapping regions. Photoconductive antennas made of these MLHS are evaluated as THz emitters in a THz time domain spectrometer (THz TDS). The high carrier mobility and effective absorption significantly increases the optical-to-THz conversion efficiency with THz bandwidth in excess of 3 THz.

© 2011 OSA

OCIS Codes
(040.5150) Detectors : Photoconductivity
(160.5140) Materials : Photoconductive materials
(260.5150) Physical optics : Photoconductivity
(300.6495) Spectroscopy : Spectroscopy, teraherz

ToC Category:
Detectors

History
Original Manuscript: October 3, 2011
Revised Manuscript: November 7, 2011
Manuscript Accepted: November 16, 2011
Published: December 5, 2011

Citation
Roman J. B. Dietz, Marina Gerhard, Dennis Stanze, Martin Koch, Bernd Sartorius, and Martin Schell, "THz generation at 1.55 µm excitation: six-fold increase in THz conversion efficiency by separated photoconductive and trapping regions," Opt. Express 19, 25911-25917 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-27-25911


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