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THz generation at 1.55 µm excitation: six-fold increase in THz conversion efficiency by separated photoconductive and trapping regionsRoman J. B. Dietz, Marina Gerhard, Dennis Stanze, Martin Koch, Bernd Sartorius, and Martin Schell »View Author Affiliations
Roman J. B. Dietz,1,*
Marina Gerhard,1
Dennis Stanze,1
Martin Koch,2
Bernd Sartorius,1
and Martin Schell1
1Fraunhofer Instiute for Telecommunications, Heinrich-Hertz-Institute, Einsteinufer 37,10587 Berlin, Germany 2Department of Physics, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany *Corresponding author: Roman.Dietz@hhi.fraunhofer.de |
Optics Express, Vol. 19, Issue 27, pp. 25911-25917 (2011)
http://dx.doi.org/10.1364/OE.19.025911
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Abstract
We present first results on photoconductive THz emitters for 1.55µm excitation. The emitters are based on MBE grown In0.53Ga0.47As/In0.52Al0.48As multilayer heterostructures (MLHS) with high carrier mobility. The high mobility is achieved by spatial separation of photoconductive and trapping regions. Photoconductive antennas made of these MLHS are evaluated as THz emitters in a THz time domain spectrometer (THz TDS). The high carrier mobility and effective absorption significantly increases the optical-to-THz conversion efficiency with THz bandwidth in excess of 3 THz.
© 2011 OSA
OCIS Codes
(040.5150) Detectors : Photoconductivity
(160.5140) Materials : Photoconductive materials
(260.5150) Physical optics : Photoconductivity
(300.6495) Spectroscopy : Spectroscopy, teraherz
ToC Category:
Detectors
History
Original Manuscript: October 3, 2011
Revised Manuscript: November 7, 2011
Manuscript Accepted: November 16, 2011
Published: December 5, 2011
Citation
Roman J. B. Dietz, Marina Gerhard, Dennis Stanze, Martin Koch, Bernd Sartorius, and Martin Schell, "THz generation at 1.55 µm excitation: six-fold increase in THz conversion efficiency by separated photoconductive and trapping regions," Opt. Express 19, 25911-25917 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-27-25911
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References
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- O. Hatem, J. Cunningham, E. H. Linfield, C. D. Wood, A. G. Davies, P. J. Cannard, M. J. Robertson, and D. G. Moodie, “Terahertz-frequency photoconductive detectors fabricated from metal-organic chemical vapor deposition-grown Fe-doped InGaAs,” Appl. Phys. Lett.98(12), 121107 (2011), http://link.aip.org/link/doi/10.1063/1.3571289 . [CrossRef]
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- O. Hatem, J. Cunningham, E. H. Linfield, C. D. Wood, A. G. Davies, P. J. Cannard, M. J. Robertson, and D. G. Moodie, “Terahertz-frequency photoconductive detectors fabricated from metal-organic chemical vapor deposition-grown Fe-doped InGaAs,” Appl. Phys. Lett.98(12), 121107 (2011), http://link.aip.org/link/doi/10.1063/1.3571289 . [CrossRef]
- C. D. Wood, O. Hatem, J. E. Cunningham, E. H. Linfield, A. G. Davies, P. J. Cannard, M. J. Robertson, and D. G. Moodie, “Terahertz emission from metal-organic chemical vapor deposition grown Fe:InGaAs using 830 nm to 1.55µm excitation,” Appl. Phys. Lett.96(19), 194104 (2010), http://link.aip.org/link/doi/10.1063/1.3427191 . [CrossRef]
- H. Roehle, R. J. B. Dietz, H. J. Hensel, J. Böttcher, H. Künzel, D. Stanze, M. Schell, and B. Sartorius, “Next generation 1.5 µm terahertz antennas: mesa-structuring of InGaAs/InAlAs photoconductive layers,” Opt. Express18(3), 2296–2301 (2010), http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-3-2296 . [CrossRef] [PubMed]
- M. Griebel, J. H. Smet, D. C. Driscoll, J. Kuhl, C. A. Diez, N. Freytag, C. Kadow, A. C. Gossard, and K. Von Klitzing, “Tunable subpicosecond optoelectronic transduction in superlattices of self-assembled ErAs nanoislands,” Nat. Mater.2(2), 122–126 (2003), doi:. [CrossRef] [PubMed]
- A. Schwagmann, Z.-Y. Zhao, F. Ospald, H. Lu, D. C. Driscoll, M. P. Hanson, A. C. Gossard, and J. H. Smet, “Terahertz emission characteristics of ErAs:InGaAs-based photoconductive antennas excited at 1.55µm,” Appl. Phys. Lett.96(14), 141108 (2010), http://link.aip.org/link/doi/10.1063/1.3374401 . [CrossRef]
- M. Griebel, J. H. Smet, D. C. Driscoll, J. Kuhl, C. A. Diez, N. Freytag, C. Kadow, A. C. Gossard, and K. Von Klitzing, “Tunable subpicosecond optoelectronic transduction in superlattices of self-assembled ErAs nanoislands,” Nat. Mater.2(2), 122–126 (2003), doi:. [CrossRef] [PubMed]
- M. B. Ketchen, D. Grischkowsky, T. C. Chen, C.-C. Chi, I. N. Duling, N. J. Halas, J.-M. Halbout, J. A. Kash, and G. P. Li, “Generation of sub-picosecond electrical pulses on coplanar transmission lines,” Appl. Phys. Lett.48(12), 751–753 (1986), http://link.aip.org/link/doi/10.1063/1.96709 . [CrossRef]
- K. Ezdi, B. Heinen, C. Jördens, N. Vieweg, N. Krumbholz, R. Wilk, M. Mikulics, and M. Koch, “A hybrid time-domain model for pulsed terahertz dipole antennas,” J. Eur. Opt. Soc. Rapid. Publ.4, 09001 (2009), http:/www.jeos.org/index.php/jeos_rp/article/view/09001 . [CrossRef]
- N. Vieweg, M. Mikulics, M. Scheller, K. Ezdi, R. Wilk, H. W. Hübers, and M. Koch, “Impact of the contact metallization on the performance of photoconductive THz antennas,” Opt. Express16(24), 19695–19705 (2008), http://www.opticsinfobase.org/abstract.cfm?URI=oe-16-24-19695 . [CrossRef] [PubMed]
- M. Griebel, J. H. Smet, D. C. Driscoll, J. Kuhl, C. A. Diez, N. Freytag, C. Kadow, A. C. Gossard, and K. Von Klitzing, “Tunable subpicosecond optoelectronic transduction in superlattices of self-assembled ErAs nanoislands,” Nat. Mater.2(2), 122–126 (2003), doi:. [CrossRef] [PubMed]
- J. Sigmund, C. Sydlo, H. L. Hartnagel, N. Benker, H. Fuess, F. Rutz, T. Kleine-Ostmann, and M. Koch, “Structure investigation of low-temperature-grown GaAsSb, a material for photoconductive terahertz antennas,” Appl. Phys. Lett.87(25), 252103 (2005), http://link.aip.org/link/doi/10.1063/1.2149977 . [CrossRef]
- H. Künzel, J. Böttcher, R. Gibis, and G. Urmann, “Material properties of Ga0.47In0.53As grown on InP by low-temperature molecular beam epitaxy,” Appl. Phys. Lett.61(11), 1347–1349 (1992), http://link.aip.org/link/doi/10.1063/1.107587 . [CrossRef]
- A. Schwagmann, Z.-Y. Zhao, F. Ospald, H. Lu, D. C. Driscoll, M. P. Hanson, A. C. Gossard, and J. H. Smet, “Terahertz emission characteristics of ErAs:InGaAs-based photoconductive antennas excited at 1.55µm,” Appl. Phys. Lett.96(14), 141108 (2010), http://link.aip.org/link/doi/10.1063/1.3374401 . [CrossRef]
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- P. R. Smith, D. H. Auston, and M. C. Nuss, “Subpicosecond photoconducting dipole antennas,” IEEE J. Quantum Electron.24(2), 255–260 (1988), http://dx.doi.org/10.1109/3.121 . [CrossRef]
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- M. Suzuki and M. Tonouchi, “Fe-implanted InGaAs terahertz emitters for 1.56 µm wavelength excitation,” Appl. Phys. Lett.86(5), 051104 (2005), http://link.aip.org/link/doi/10.1063/1.1861495 . [CrossRef]
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- M. Suzuki and M. Tonouchi, “Fe-implanted InGaAs photoconductive terahertz detectors triggered by 1.56 μm femtosecond optical pulses,” Appl. Phys. Lett.86(16), 163504 (2005), http://link.aip.org/link/doi/10.1063/1.1901817 . [CrossRef]
- M. Suzuki and M. Tonouchi, “Fe-implanted InGaAs terahertz emitters for 1.56 µm wavelength excitation,” Appl. Phys. Lett.86(5), 051104 (2005), http://link.aip.org/link/doi/10.1063/1.1861495 . [CrossRef]
- H. Künzel, J. Böttcher, R. Gibis, and G. Urmann, “Material properties of Ga0.47In0.53As grown on InP by low-temperature molecular beam epitaxy,” Appl. Phys. Lett.61(11), 1347–1349 (1992), http://link.aip.org/link/doi/10.1063/1.107587 . [CrossRef]
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Appl. Opt.
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IEEE J. Quantum Electron.
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