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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 27 — Dec. 19, 2011
  • pp: 26936–26947

Low-voltage high-performance silicon photonic devices and photonic integrated circuits operating up to 30 Gb/s

Gyungock Kim, Jeong Woo Park, In Gyoo Kim, Sanghoon Kim, Sanggi Kim, Jong Moo Lee, Gun Sik Park, Jiho Joo, Ki-Seok Jang, Jin Hyuk Oh, Sun Ae Kim, Jong Hoon Kim, Jun Young Lee, Jong Moon Park, Do-Won Kim, Deog-Kyoon Jeong, Moon-Sang Hwang, Jeong-Kyoum Kim, Kyu-Sang Park, Han-Kyu Chi, Hyun-Chang Kim, Dong-Wook Kim, and Mu Hee Cho  »View Author Affiliations


Optics Express, Vol. 19, Issue 27, pp. 26936-26947 (2011)
http://dx.doi.org/10.1364/OE.19.026936


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Abstract

We present high performance silicon photonic circuits (PICs) defined for off-chip or on-chip photonic interconnects, where PN depletion Mach-Zehnder modulators and evanescent-coupled waveguide Ge-on-Si photodetectors were monolithically integrated on an SOI wafer with CMOS-compatible process. The fabricated silicon PICoff-chip for off-chip optical interconnects showed operation up to 30 Gb/s. Under differential drive of low-voltage 1.2 Vpp, the integrated 1 mm-phase-shifter modulator in the PICoff-chip demonstrated an extinction ratio (ER) of 10.5dB for 12.5 Gb/s, an ER of 9.1dB for 20 Gb/s, and an ER of 7.2 dB for 30 Gb/s operation, without adoption of travelling-wave electrodes. The device showed the modulation efficiency of VπLπ ~1.59 Vcm, and the phase-shifter loss of 3.2 dB/mm for maximum optical transmission. The Ge photodetector, which allows simpler integration process based on reduced pressure chemical vapor deposition exhibited operation over 30 Gb/s with a low dark current of 700 nA at −1V. The fabricated silicon PICintra-chip for on-chip (intra-chip) photonic interconnects, where the monolithically integrated modulator and Ge photodetector were connected by a silicon waveguide on the same chip, showed on-chip data transmissions up to 20 Gb/s, indicating potential application in future silicon on-chip optical network. We also report the performance of the hybrid silicon electronic-photonic IC (EPIC), where a PICintra-chip chip and 0.13μm CMOS interface IC chips were hybrid-integrated.

© 2011 OSA

OCIS Codes
(040.5160) Detectors : Photodetectors
(040.6040) Detectors : Silicon
(060.4510) Fiber optics and optical communications : Optical communications
(130.0250) Integrated optics : Optoelectronics
(130.3120) Integrated optics : Integrated optics devices
(200.4650) Optics in computing : Optical interconnects
(250.5300) Optoelectronics : Photonic integrated circuits
(250.7360) Optoelectronics : Waveguide modulators
(130.4110) Integrated optics : Modulators

ToC Category:
Integrated Optics

History
Original Manuscript: October 19, 2011
Revised Manuscript: November 30, 2011
Manuscript Accepted: December 8, 2011
Published: December 16, 2011

Citation
Gyungock Kim, Jeong Woo Park, In Gyoo Kim, Sanghoon Kim, Sanggi Kim, Jong Moo Lee, Gun Sik Park, Jiho Joo, Ki-Seok Jang, Jin Hyuk Oh, Sun Ae Kim, Jong Hoon Kim, Jun Young Lee, Jong Moon Park, Do-Won Kim, Deog-Kyoon Jeong, Moon-Sang Hwang, Jeong-Kyoum Kim, Kyu-Sang Park, Han-Kyu Chi, Hyun-Chang Kim, Dong-Wook Kim, and Mu Hee Cho, "Low-voltage high-performance silicon photonic devices and photonic integrated circuits operating up to 30 Gb/s," Opt. Express 19, 26936-26947 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-27-26936


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