Effect of embedded silica nanospheres on improving the performance of InGaN/GaN light-emitting diodes

doi:10.1364/OE.19.002029

Effect of embedded silica nanospheres on improving the performance of InGaN/GaN light-emitting diodes

Young Jae Park, Hee Yun Kim, Jae Hyoung Ryu, Hyun Kyu Kim, Ji Hye Kang, Nam Han, Min Han, Hyun Jeong, Mun Seok Jeong, and Chang-Hee Hong »View Author Affiliations

Optics Express, Vol. 19, Issue 3, pp. 2029-2036 (2011)
http://dx.doi.org/10.1364/OE.19.002029

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Abstract

We report on the effect of embedded silica nanospheres on improving the performance of InGaN/GaN light-emitting diodes (LEDs). The silica nanospehres were coated on the selectively etched GaN using a spin-coating method. With the embedded silica nanospheres structures, we achieved a smaller reverse leakage current due to the selective defect blocking-induced crystal quality improvement. Moreover, the reflectance spectra show strong reflectance modulations due to the different refractive indices between the GaN and silica nanospheres. By using confocal scanning electroluminescence microscopy, a strong light emission from silica nanospheres demonstrates that the silica nanospheres acted as a reflector. We found that the optimized embedded silica nanospheres structure, whose the average size of the etched pits was about 3.5 μm and EPD was 3 x 10⁷ cm⁻², could enhance light output power by a factor of 2.23 due to enhanced the probability of light scattering at silica nanospheres.

OCIS Codes
(250.0250) Optoelectronics : Optoelectronics
(290.0290) Scattering : Scattering

ToC Category:
Optoelectronics

History
Original Manuscript: November 3, 2010
Revised Manuscript: January 6, 2011
Manuscript Accepted: January 7, 2011
Published: January 19, 2011

Virtual Issues
Vol. 6, Iss. 2 Virtual Journal for Biomedical Optics

Citation
Young Jae Park, Hee Yun Kim, Jae Hyoung Ryu, Hyun Kyu Kim, Ji Hye Kang, Nam Han, Min Han, Hyun Jeong, Mun Seok Jeong, and Chang-Hee Hong, "Effect of embedded silica nanospheres on improving the performance of InGaN/GaN light-emitting diodes," Opt. Express 19, 2029-2036 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-3-2029

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References

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S. W. Lee, D. C. Oh, H. Goto, J. S. Ha, H. J. Lee, T. Hanada, M. W. Cho, S. K. Hong, H. Y. Lee, S. R. Cho, J. W. Choi, J. H. Choi, J. H. Jang, J. E. Shin, J. S. Lee, and T. Yao, “Analysis of the relation between leakage current and dislocations in GaN-based light-emitting devices,” Phys. Status Solidi 4(1c), 37–40 (2007). [CrossRef]
O.-H. Nam, M. D. Bremser, T. S. Zheleva, and R. F. Davis, “Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy,” Appl. Phys. Lett. 71(18), 2638 (1997). [CrossRef]
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M. A. Moram, Y. Zhang, M. J. Kappers, Z. H. Barber, and C. J. Humphreys, “Dislocation reduction in gallium nitride films using scandium nitride interlayers,” Appl. Phys. Lett. 91(15), 152101 (2007). [CrossRef]
Q. Li, J. J. Figiel, and G. T. Wang, “Dislocation density reduction in GaN by dislocation filtering through a self-assembled monolayer of silica microspheres,” Appl. Phys. Lett. 94(23), 231105 (2009). [CrossRef]
Y. J. Park, H. G. Kim, H. Y. Kim, J. H. Ryu, H. K. Kim, J. H. Kang, N. Han, M. Han, B. H. Kong, H. K. Cho, and C.-H. Hong, “Selective Defect Blocking by Self-Assembled Silica Nanospheres for High Quality GaN Template,” Electrochem. Solid-State Lett. 13(8), H287 (2010). [CrossRef]
H. Gao, F. Yan, Y. Zhang, J. Li, Y. Zeng, and G. Wang, “Improvement of the performance of GaN based LEDs grown on sapphire substrates patterned by wet and ICP etching,” Solid-State Electron. 52(6), 962–967 (2008). [CrossRef]
J. H. Kang, H. G. Kim, H. K. Kim, H. Y. Kim, J. H. Ryu, P. Uthirakumar, N. Han, and C.-H. Hong, “Improvement of Light Ouput Power in InGaN/GaN Light-Emitting Diodes with a Nanotextured GaN Surface Using Indium Tin Oxide Nanospheres,” Jpn. J. Appl. Phys. 48(10), 102104 (2009). [CrossRef]
H. K. Cho, J. H. Jang, J. H. Choi, J. W. Choi, J. W. Kim, J. S. Lee, B. S. Lee, Y. H. Choe, K. D. Lee, S. H. Kim, K. R. Lee, S. K. Kim, and Y. H. Lee, “Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes,” Opt. Express 14(19), 8654–8660 (2006). [CrossRef] [PubMed]
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W. C. Lai, Y. Y. Yang, L. C. Peng, S. W. Yang, Y. R. Lin, and J. K. Sheu, “GaN-based light emitting diodes with embedded SiO2 pillars air gap array structures,” Appl. Phys. Lett. 97(8), 081103 (2010). [CrossRef]
C. Y. Cho, J. B. Lee, S. J. Lee, S.-H. Han, T.-Y. Park, J. W. Kim, Y. C. Kim, and S.-J. Park, “Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO(2).,” Opt. Express 18(2), 1462–1468 (2010). [CrossRef] [PubMed]
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J. L. Weyher, H. Ashraf, and P. R. Hageman, “Reduction of dislocation density in epitaxial GaN layers by overgrowth of defect-related etch pits,” Appl. Phys. Lett. 95(3), 031913 (2009). [CrossRef]
E. F. Schubert, Light-Emitting Diodes, 2nd ed. (Cambridge University Press, 2006).
M. S. Ferdous, X. Wang, M. N. Fairchild, and S. D. Hersee, “Effect of threading defects on InGaN/GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 91(23), 231107 (2007). [CrossRef]
S. W. Lee, D. C. Oh, H. Goto, J. S. Ha, H. J. Lee, T. Hanada, M. W. Cho, T. Yao, S. K. Hong, H. Y. Lee, S. R. Cho, J. W. Choi, J. H. Choi, J. H. Jang, J. E. Shin, and J. S. Lee, “Origin of forward leakage current in GaN-based light-emitting devices,” Appl. Phys. Lett. 89(13), 132117 (2006). [CrossRef]

Ashraf, H.
Barber, Z. H.
Bremser, M. D.
Carr, E. C.
Cho, C. Y.
Cho, H. K.
Cho, M. W.
Cho, S. R.
Choe, Y. H.
Choi, J. H.
Choi, J. W.
Davis, R. F.
Dogan, S.
Dupuis, R. D.
Erikson, H. I.
Fairchild, M. N.
Ferdous, M. S.
Figiel, J. J.
Fu, Y.
Gao, H.
Girolami, G.
Goto, H.
Ha, J. S.
Hageman, P. R.
Han, M.
Han, N.
Han, S.-H.
Hanada, T.
Hao, M.
Hersee, S. D.
Hong, C. H.
Hong, C.-H.
Hong, S. K.
Humphreys, C. J.
Inoki, C. K.
Jang, J. H.
Kang, J. H.
Kappers, M. J.
Kim, H.
Kim, H. G.
Kim, H. K.
Kim, H. Y.
Kim, J. W.
Kim, S. H.
Kim, S. K.
Kim, Y. C.
Kong, B. H.
Kuan, T. S.
Kurai, S.
Lai, W. C.
Lee, B. S.
Lee, H. J.
Lee, H. Y.
Lee, J. B.
Lee, J. S.
Lee, J. W.
Lee, K. D.
Lee, K. R.
Lee, S. J.
Lee, S. N.
Lee, S. W.
Lee, Y. H.
Li, J.
Li, Q.
Lin, Y. R.
Lu, Y.
Ludowise, M. J.
McLellan, J.
Moon, Y.-T.
Moram, M. A.
Morishima, Y.
Morkoç, H.
Nam, O.-H.
Naoi, Y.
Nishino, K.
Oh, D. C.
Özgür, Ü.
Park, S.-J.
Park, T.-Y.
Park, Y.
Park, Y. J.
Peng, L. C.
Romano, L. T.
Rosner, S. J.
Ryou, J. H.
Ryu, J. H.
Sakai, S.
Sato, H.
Sheu, J. K.
Shin, J. E.
Smith, D. J.
Sone, C.
Sugahara, T.
Tottori, S.
Uthirakumar, P.
Wang, G.
Wang, G. T.
Wang, T.
Wang, X.
Weyher, J. L.
Xia, Y.
Xie, J. Q.
Yamashita, K.
Yan, F.
Yang, S. W.
Yang, Y. Y.
Yao, T.
Yin, Y.
Yun, F.
Zeng, Y.
Zhang, Y.
Zheleva, T. S.
Zhou, L.

Adv. Funct. Mater.

Y. Xia, Y. Yin, Y. Lu, and J. McLellan, “Template-Assisted Self-Assembly of Spherical Colloids into Complex and Controllable Structures,” Adv. Funct. Mater. 13(12), 907–918 (2003). [CrossRef]

Appl. Phys. Lett.

J. L. Weyher, H. Ashraf, and P. R. Hageman, “Reduction of dislocation density in epitaxial GaN layers by overgrowth of defect-related etch pits,” Appl. Phys. Lett. 95(3), 031913 (2009). [CrossRef]
M. S. Ferdous, X. Wang, M. N. Fairchild, and S. D. Hersee, “Effect of threading defects on InGaN/GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 91(23), 231107 (2007). [CrossRef]
S. W. Lee, D. C. Oh, H. Goto, J. S. Ha, H. J. Lee, T. Hanada, M. W. Cho, T. Yao, S. K. Hong, H. Y. Lee, S. R. Cho, J. W. Choi, J. H. Choi, J. H. Jang, J. E. Shin, and J. S. Lee, “Origin of forward leakage current in GaN-based light-emitting devices,” Appl. Phys. Lett. 89(13), 132117 (2006). [CrossRef]
J. W. Lee, C. Sone, Y. Park, S. N. Lee, J. H. Ryou, R. D. Dupuis, C. H. Hong, and H. Kim, “High efficiency GaN-based light-emitting diodes fabricated on dielectric mask-embedded structures,” Appl. Phys. Lett. 95(1), 011108 (2009). [CrossRef]
W. C. Lai, Y. Y. Yang, L. C. Peng, S. W. Yang, Y. R. Lin, and J. K. Sheu, “GaN-based light emitting diodes with embedded SiO2 pillars air gap array structures,” Appl. Phys. Lett. 97(8), 081103 (2010). [CrossRef]
S. J. Rosner, E. C. Carr, M. J. Ludowise, G. Girolami, and H. I. Erikson, “Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition,” Appl. Phys. Lett. 70(4), 420 (1997). [CrossRef]
O.-H. Nam, M. D. Bremser, T. S. Zheleva, and R. F. Davis, “Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy,” Appl. Phys. Lett. 71(18), 2638 (1997). [CrossRef]
Y. Fu, Y.-T. Moon, F. Yun, Ü. Özgür, J. Q. Xie, S. Doğan, H. Morkoç, C. K. Inoki, T. S. Kuan, L. Zhou, and D. J. Smith, “Effectiveness of TiN porous templates on the reduction of threading dislocations in GaN overgrowth by organometallic vapor-phase epitaxy,” Appl. Phys. Lett. 86(4), 043108 (2005). [CrossRef]
M. A. Moram, Y. Zhang, M. J. Kappers, Z. H. Barber, and C. J. Humphreys, “Dislocation reduction in gallium nitride films using scandium nitride interlayers,” Appl. Phys. Lett. 91(15), 152101 (2007). [CrossRef]
Q. Li, J. J. Figiel, and G. T. Wang, “Dislocation density reduction in GaN by dislocation filtering through a self-assembled monolayer of silica microspheres,” Appl. Phys. Lett. 94(23), 231105 (2009). [CrossRef]

Electrochem. Solid-State Lett.

Y. J. Park, H. G. Kim, H. Y. Kim, J. H. Ryu, H. K. Kim, J. H. Kang, N. Han, M. Han, B. H. Kong, H. K. Cho, and C.-H. Hong, “Selective Defect Blocking by Self-Assembled Silica Nanospheres for High Quality GaN Template,” Electrochem. Solid-State Lett. 13(8), H287 (2010). [CrossRef]

J. Cryst. Growth

S. Sakai, T. Wang, Y. Morishima, and Y. Naoi, “A new method of reducing dislocation density in GaN layer grown on sapphire substrate by MOVPE,” J. Cryst. Growth 221(1-4), 334–337 (2000). [CrossRef]

Jpn. J. Appl. Phys.

T. Sugahara, H. Sato, M. Hao, Y. Naoi, S. Kurai, S. Tottori, K. Yamashita, K. Nishino, L. T. Romano, and S. Sakai, “Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN,” Jpn. J. Appl. Phys. 37(Part 2, No. 4A), L398– L400 (1998). [CrossRef]
J. H. Kang, H. G. Kim, H. K. Kim, H. Y. Kim, J. H. Ryu, P. Uthirakumar, N. Han, and C.-H. Hong, “Improvement of Light Ouput Power in InGaN/GaN Light-Emitting Diodes with a Nanotextured GaN Surface Using Indium Tin Oxide Nanospheres,” Jpn. J. Appl. Phys. 48(10), 102104 (2009). [CrossRef]

Opt. Express

Phys. Status Solidi

S. W. Lee, D. C. Oh, H. Goto, J. S. Ha, H. J. Lee, T. Hanada, M. W. Cho, S. K. Hong, H. Y. Lee, S. R. Cho, J. W. Choi, J. H. Choi, J. H. Jang, J. E. Shin, J. S. Lee, and T. Yao, “Analysis of the relation between leakage current and dislocations in GaN-based light-emitting devices,” Phys. Status Solidi 4(1c), 37–40 (2007). [CrossRef]

Solid-State Electron.

H. Gao, F. Yan, Y. Zhang, J. Li, Y. Zeng, and G. Wang, “Improvement of the performance of GaN based LEDs grown on sapphire substrates patterned by wet and ICP etching,” Solid-State Electron. 52(6), 962–967 (2008). [CrossRef]

Other

E. F. Schubert, Light-Emitting Diodes, 2nd ed. (Cambridge University Press, 2006).

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