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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 3 — Jan. 31, 2011
  • pp: 2029–2036

Effect of embedded silica nanospheres on improving the performance of InGaN/GaN light-emitting diodes

Young Jae Park, Hee Yun Kim, Jae Hyoung Ryu, Hyun Kyu Kim, Ji Hye Kang, Nam Han, Min Han, Hyun Jeong, Mun Seok Jeong, and Chang-Hee Hong  »View Author Affiliations


Optics Express, Vol. 19, Issue 3, pp. 2029-2036 (2011)
http://dx.doi.org/10.1364/OE.19.002029


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Abstract

We report on the effect of embedded silica nanospheres on improving the performance of InGaN/GaN light-emitting diodes (LEDs). The silica nanospehres were coated on the selectively etched GaN using a spin-coating method. With the embedded silica nanospheres structures, we achieved a smaller reverse leakage current due to the selective defect blocking-induced crystal quality improvement. Moreover, the reflectance spectra show strong reflectance modulations due to the different refractive indices between the GaN and silica nanospheres. By using confocal scanning electroluminescence microscopy, a strong light emission from silica nanospheres demonstrates that the silica nanospheres acted as a reflector. We found that the optimized embedded silica nanospheres structure, whose the average size of the etched pits was about 3.5 μm and EPD was 3 x 107 cm−2, could enhance light output power by a factor of 2.23 due to enhanced the probability of light scattering at silica nanospheres.

© 2011 OSA

OCIS Codes
(250.0250) Optoelectronics : Optoelectronics
(290.0290) Scattering : Scattering

ToC Category:
Optoelectronics

History
Original Manuscript: November 3, 2010
Revised Manuscript: January 6, 2011
Manuscript Accepted: January 7, 2011
Published: January 19, 2011

Virtual Issues
Vol. 6, Iss. 2 Virtual Journal for Biomedical Optics

Citation
Young Jae Park, Hee Yun Kim, Jae Hyoung Ryu, Hyun Kyu Kim, Ji Hye Kang, Nam Han, Min Han, Hyun Jeong, Mun Seok Jeong, and Chang-Hee Hong, "Effect of embedded silica nanospheres on improving the performance of InGaN/GaN light-emitting diodes," Opt. Express 19, 2029-2036 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-3-2029


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