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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 5 — Feb. 28, 2011
  • pp: 3919–3924

Analytical model for depletion-based silicon modulator simulation

G. Rasigade, D. Marris-Morini, M. Ziebell, E. Cassan, and L. Vivien  »View Author Affiliations


Optics Express, Vol. 19, Issue 5, pp. 3919-3924 (2011)
http://dx.doi.org/10.1364/OE.19.003919


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Abstract

An original method to simulate depletion-based silicon modulators based on an analytical description of the active region is presented. This method is fast and efficient in particular for performance optimization. It is applied for a lateral diode integrated in a rib waveguide, and a comparison is performed with classical 2D numerical simulation. A very good agreement is obtained, showing the accuracy and efficiency of this analytical method.

© 2011 OSA

OCIS Codes
(130.0250) Integrated optics : Optoelectronics
(130.4110) Integrated optics : Modulators

ToC Category:
Integrated Optics

History
Original Manuscript: December 10, 2010
Revised Manuscript: January 25, 2011
Manuscript Accepted: February 8, 2011
Published: February 14, 2011

Citation
G. Rasigade, D. Marris-Morini, M. Ziebell, E. Cassan, and L. Vivien, "Analytical model for depletion-based silicon modulator simulation," Opt. Express 19, 3919-3924 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-5-3919


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References

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