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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 5 — Feb. 28, 2011
  • pp: 4076–4084

GaAs-based surface-normal optical modulator compared to Si and its wavelength response characterization using a supercontinuum laser

Ojas P. Kulkarni, Mohammed N. Islam, and Fred L. Terry, Jr.  »View Author Affiliations

Optics Express, Vol. 19, Issue 5, pp. 4076-4084 (2011)

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A GaAs-based surface-normal optical modulator using the free-carrier effect is demonstrated for the first time to our knowledge. The device exhibits ~43% modulation depth compared to 24% for a previously demonstrated Si-based device with twice the interaction length. Simulations predict ~1.8 times the speeds for GaAs-based devices compared to Si. Operation in conjunction with a supercontinuum source is used to characterize the wavelength response of the modulator. Potential for colorless operation makes the modulator a candidate for wavelength-division multiplexed networks with broadband light sources.

© 2011 OSA

OCIS Codes
(060.2340) Fiber optics and optical communications : Fiber optics components
(250.4110) Optoelectronics : Modulators

ToC Category:

Original Manuscript: September 24, 2010
Revised Manuscript: February 5, 2011
Manuscript Accepted: February 8, 2011
Published: February 16, 2011

Ojas P. Kulkarni, Mohammed N. Islam, and Fred L. Terry, "GaAs-based surface-normal optical modulator compared to Si and its wavelength response characterization using a supercontinuum laser," Opt. Express 19, 4076-4084 (2011)

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  1. O. Solgaard, A. A. Godil, B. R. Hemenway, and D. M. Bloom, “All-silicon integrated optical modulator,” IEEE J. Sel. Areas Comm. 9(5), 704–710 (1991). [CrossRef]
  2. G. C. Gilbreath, W. S. Rabinovich, T. J. Meehan, M. J. Vilcheck, R. Mahon, R. Burris, M. Ferraro, I. Sokolsky, J. A. Vasquez, C. S. Bovais, K. Cochrell, K. C. Goins, R. Barbehenn, D. S. Katzer, K. Ikossi-Anastasiou, and M. J. Montes, “Large-aperture multiple quantum well modulating retroreflector for free-space optical data transfer on unmanned aerial vehicles,” Opt. Eng. 40(7), 1348–1356 (2001). [CrossRef]
  3. B. Noharet, Q. Wang, S. Junique, D. Ågren, and S. Almqvist, ““Multiple quantum well spatial light modulators for optical signal processing,” Integrated Optical Devices, Nanostructures, and Displays,” Proc. SPIE 5618, 146–155 (2004). [CrossRef]
  4. H. Liu, C. C. Lin, and J. S. Harris, “High-speed, dual-function vertical cavity multiple quantum well modulators and photodetectors for optical interconnects,” Opt. Eng. 40(7), 1186–1191 (2001). [CrossRef]
  5. Y. Ding, R. M. Brubaker, D. D. Nolte, M. R. Melloch, and A. M. Weiner, “Femtosecond pulse shaping by dynamic holograms in photorefractive multiple quantum wells,” Opt. Lett. 22(10), 718–720 (1997). [CrossRef] [PubMed]
  6. B. C. Collings, M. L. Mitchell, L. Boivin, and W. H. Knox, “A 1021 channel WDM system,” IEEE Photon. Technol. Lett. 12(7), 906–908 (2000). [CrossRef]
  7. A. Arnulf, J. Bricard, E. Curé, and C. Véret, “Transmission by haze and fog in the spectral region 0.35 to 10 microns,” J. Opt. Soc. Am. 47(6), 491–497 (1957), http://www.opticsinfobase.org/abstract.cfm?URI=josa-47-6-491 . [CrossRef]
  8. T. H. Stievater, D. Park, M. W. Pruessner, W. S. Rabinovich, S. Kanakaraju, and C. J. K. Richardson, “A microelectromechanically tunable asymmetric Fabry-Perot quantum well modulator at 1.55 microm,” Opt. Express 16(21), 16766–16773 (2008), http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-16-21-16766 . [CrossRef] [PubMed]
  9. H. Mohseni, W. K. Chan, H. An, A. Ulmer, and D. Capewell, “Tunable surface-normal modulators operating near 1550 nm with a high-extinction ratio at high temperatures,” IEEE Photon. Technol. Lett. 18(1), 214–216 (2006). [CrossRef]
  10. B. R. Hemenway, “Integrated silicon light modulator for fiber-optic interconnects at 1.3 micron wavelength,” Stanford University dissertation, Ginzton Lab. Report #4703, May 1990.
  11. R. E. Williams, Gallium arsenide processing techniques, (Artech House, Inc., 1984).
  12. C. Xia, M. Kumar, M.-Y. Cheng, O. P. Kulkarni, M. N. Islam, A. Galvanauskas, F. L. Terry, M. J. Freeman, D. A. Nolan, and W. A. Wood, “Supercontinuum generation in silica fibers by amplified nanosecond laser diode pulses,” IEEE J. Sel. Top. Quantum Electron. 13(3), 789–797 (2007). [CrossRef]
  13. W. G. Spitzer and J. M. Whelan, “Infrared absorption and electron effective mass in n-type gallium arsenide,” Phys. Rev. 114(1), 59–63 (1959). [CrossRef]
  14. S. L. Chuang, Physics of optoelectronic devices, (Wiley-Interscience Publication, 1995).

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